Fairchild H11A5M General purpose 6-pin phototransistor optocoupler Datasheet

4N25M, 4N26M, 4N27M, 4N28M, 4N35M, 4N36M, 4N37M,
H11A1M, H11A2M, H11A3M, H11A4M, H11A5M
General Purpose 6-Pin Phototransistor Optocouplers
Features
Description
■ UL recognized (File # E90700, Volume 2)
The general purpose optocouplers consist of a gallium
arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
■ VDE recognized (File # 102497)
– Add option V (e.g., 4N25VM)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Schematic
Package Outlines
1
6
2
5
3
NC
4
PIN 1. ANODE
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
January 2009
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
Wave solder temperature (see page 8 for reflow solder profile)
PD
260 for 10 sec
°C
250
mW
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
2.94
EMITTER
IF
DC/Average Forward Input Current
60
mA
VR
Reverse Input Voltage
6
V
IF(pk)
PD
Forward Current – Peak (300µs, 2% Duty Cycle)
LED Power Dissipation @ TA = 25°C
Derate above 25°C
3
A
120
mW
1.41
mW/°C
DETECTOR
VCEO
Collector-Emitter Voltage
30
V
VCBO
Collector-Base Voltage
70
V
VECO
Emitter-Collector Voltage
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
7
V
150
mW
1.76
mW/°C
Electrical Characteristics (TA = 25°C unless otherwise specified)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.*
Max.
Unit
EMITTER
VF
Input Forward Voltage
IF = 10mA
1.18
1.50
V
IR
Reverse Leakage Current
VR = 6.0V
0.001
10
µA
DETECTOR
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IF = 0
30
100
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA, IF = 0
70
120
V
7
10
BVECO
Emitter-Collector Breakdown Voltage
IE = 100µA, IF = 0
ICEO
Collector-Emitter Dark Current
VCE = 10V, IF = 0
ICBO
Collector-Base Dark Current
VCB = 10V
CCE
Capacitance
VCE = 0V, f = 1 MHz
V
1
50
nA
20
nA
8
pF
Isolation Characteristics
Symbol
Characteristic
Test Conditions
Min.
Typ.* Max.
Units
VISO
Input-Output Isolation Voltage
f = 60Hz, t = 1 sec
7500
Vac(pk)
RISO
Isolation Resistance
VI-O = 500 VDC
1011
Ω
CISO
Isolation Capacitance
VI-O = &, f = 1MHz
0.2
2
pF
*Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
2
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min. Typ.* Max.
Unit
DC CHARACTERISTICS
CTR
VCE (SAT)
Current Transfer Ratio,
Collector to Emitter
Collector-Emitter
Saturation Voltage
IF = 10mA, VCE = 10V
4N35M, 4N36M,
4N37M
100
H11A1M
50
%
H11A5M
30
4N25M, 4N26M
H11A2M, H11A3M
20
4N27M, 4N28M
H11A4M
10
IF = 10mA, VCE = 10V,
TA = -55°C
4N35M, 4N36M,
4N37M
40
IF = 10mA, VCE = 10V,
TA = +100°C
4N35M, 4N36M,
4N37M
40
IC = 2mA, IF = 50mA
4N25M, 4N26M,
4N27M, 4N28M,
0.5
IC = 0.5mA, IF = 10mA
4N35M, 4N36M,
4N37M
0.3
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
0.4
V
AC CHARACTERISTICS
TON
TOFF
Non-Saturated
Turn-on Time
Turn-off Time
IF = 10mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4,
H11A5M
2
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N35M, 4N36M,
4N37M
2
IF = 10mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N25M, 4N26M,
4N27M, 4N28M,
H11A1M, H11A2M,
H11A3M, H11A4M,
H11A5M
2
IC = 2mA, VCC = 10V,
RL = 100Ω (Fig. 11)
4N35M, 4N36M,
4N37M
2
µs
10
µs
µs
10
* Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
3
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified)
Fig. 2 Normalized CTR vs. Forward Current
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF - FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.8
1.5
1.4
TA = -55°C
1.3
TA = 25°C
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10 mA
1.0
0.8
0.6
1.2
0.4
TA = 100°C
1.1
0.2
1.0
0.0
1
10
100
0
2
4
6
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
IF = 5 mA
NORMALIZED CTR
12
14
16
18
20
1.0
1.2
1.0
IF = 10 mA
0.8
IF = 20 mA
0.6
0.4
Normalized to
IF = 10 mA
TA = 25°C
-40
-20
0
20
40
60
80
0.9
IF = 20 mA
0.8
IF = 10 mA
0.7
IF = 5 mA
0.6
0.5
0.4
0.3
0.2
VCE = 5.0 V
0.1
0.0
100
10
100
1000
RBE- BASE RESISTANCE (kΩ)
TA - AMBIENT TEMPERATURE (°C)
Fig. 6 Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 CTR vs. RBE (Saturated)
100
1.0
0.9
VCE (SAT) - COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
10
Fig. 4 CTR vs. RBE (Unsaturated)
Fig. 3 Normalized CTR vs. Ambient Temperature
1.4
0.2
-60
8
IF - FORWARD CURRENT (mA)
IF - LED FORWARD CURRENT (mA)
VCE= 0.3 V
0.8
IF = 20 mA
0.7
0.6
IF = 10 mA
0.5
0.4
0.3
IF = 5 mA
0.2
TA = 25˚C
10
1
IF = 2.5 mA
0.1
IF = 20 mA
0.01
0.1
IF = 10 mA
IF = 5 mA
0.0
10
100
0.001
0.01
1000
RBE- BASE RESISTANCE (k Ω)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
0.1
1
10
IC - COLLECTOR CURRENT (mA)
www.fairchildsemi.com
4
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves
Fig. 8 Normalized ton vs. RBE
Fig. 7 Switching Speed vs. Load Resistor
1000
5.0
NORMALIZED ton - (ton(RBE) / ton(open))
SWITCHING SPEED - (µs)
IF = 10 mA
VCC = 10 V
TA = 25°C
100
Toff
10
Tf
Ton
1
Tr
0.1
0.1
1
10
VCC = 10 V
IC = 2 mA
RL = 100 Ω
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
100
10
100
R-LOAD RESISTOR (kΩ)
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
NORMALIZED toff - (toff(RBE) / toff(open))
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10 V
IC = 2 mA
RL = 100 Ω
0.5
0.4
0.3
0.2
1000
100000
10000
VCE = 10 V
TA = 25°C
1000
100
10
1
0.1
0.01
0.001
0.1
100
10000
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized toff vs. RBE
1.4
10
1000
RBE- BASE RESISTANCE (k Ω)
10000
100000
0
20
40
60
80
100
TA - AMBIENT TEMPERATURE (°C)
RBE- BASE RESISTANCE (k Ω)
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
INPUT
RL
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
ton
tf
toff
Adjust IF to produce IC = 2 mA
Figure 11. Switching Time Test Circuit and Waveforms
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
5
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Typical Performance Curves (Continued)
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
1
3
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
5.08 (Max.)
0.25–0.36
7.62 (Typ.)
3.28–3.53
5.08 (Max.)
0.25–0.36
3.28–3.53
0.38 (Min.)
2.54–3.81
0.38 (Min.)
2.54–3.81
0.20–0.30
2.54 (Bsc)
(0.86)
15° (Typ.)
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.20–0.30
0.41–0.51
0.76–1.14
10.16–10.80
1.02–1.78
0.76–1.14
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
0.20–0.30
2.54 (Bsc)
(0.86)
0.16–0.88
(8.13)
0.41–0.51
1.02–1.78
0.76–1.14
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
6
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Package Dimensions
Order Entry Identifier
(Example)
Option
Description
No option
4N25M
S
4N25SM
Standard Through Hole Device
SR2
4N25SR2M
T
4N25TM
0.4" Lead Spacing
VDE 0884
Surface Mount Lead Bend
Surface Mount; Tape and Reel
V
4N25VM
TV
4N25TVM
VDE 0884, 0.4" Lead Spacing
SV
4N25SVM
VDE 0884, Surface Mount
SR2V
4N25SR2VM
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
V
3
4N25
2
X YY Q
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are
marked with date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
7
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Reflow Profile
300
260°C
280
260
>245°C = 42 Sec
240
220
200
180
°C
Time above
183°C = 90 Sec
160
140
120
1.822°C/Sec Ramp up rate
100
80
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
8
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
Carrier Tape Specification
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FAST®
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SM
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Green FPS™ e-Series™
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IntelliMAX™
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MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
µSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
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The Power Franchise®
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Advance Information
Formative / In Design
Preliminary
First Production
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Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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The datasheet is for reference information only.
Rev. I38
©2005 Fairchild Semiconductor Corporation
4NXXM, H11AXM Rev. 1.0.2
www.fairchildsemi.com
9
4NXXM, H11AXM — General Purpose 6-Pin Phototransistor Optocouplers
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