Preliminary Technical Information IXTA200N075T IXTP200N075T TrenchMVTM Power MOSFET VDSS ID25 RDS(on) = 75 V = 200 A ≤ 5.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25° C Lead Current Limit, RMS TC = 25° C, pulse width limited by TJM 200 75 540 A A A IAR E AS TC = 25° C TC = 25° C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤175° C, RG = 5 Ω 3 V/ns PD TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque (TO-220) Weight TO-220 TO-263 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3 2.5 Symbol Test Conditions (TJ = 25° C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 © 2006 IXYS CORPORATION All rights reserved 430 V TJ = 150° C 4.2 4.0 V ± 200 nA 5 250 µA µA 5.0 mΩ TO-263 (IXTA) G S (TAB) TO-220 (IXTP) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - 42V Power Bus - ABS Systems DC/DC Converters and Off-line UPS Primary Switch for 24V and 48V Systems High Current Switching Applications DS99521 (11/06) IXTA200N075T IXTP200N075T Symbol Test Conditions (TJ = 25° C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss TO-263 (IXTA) Outline Characteristic Values VGS = 0 V, VDS = 25 V, f = 1 MHz Min. Typ. 70 115 S 6800 pF 1040 pF 190 pF Crss Max. td(on) Resistive Switching Times 31 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 57 ns td(off) RG = 5 Ω (External) 54 ns 52 ns 160 nC 35 nC 43 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd 0.35 °C/W RthJC RthCH Pins: TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions TJ = 25° C unless otherwise specified) Characteristic Values Min. Typ. Max. IS VGS = 0 V 200 A ISM Pulse width limited by TJM 540 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/µs 80 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 TO-220 (IXTP) Outline ns VR = 25 V, VGS = 0 V Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARY TECHNICAL INFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTA200N075T IXTP200N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGS = 10V 9V 8V 7V 180 160 7V 250 ID - Amperes 140 ID - Amperes VGS = 10V 9V 8V 300 120 100 6V 80 60 200 6V 150 100 40 5V 50 20 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 4 5 6 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 2.6 VGS = 10V 9V 8V 7V 160 2.2 140 120 100 6V 80 60 VGS = 10V 2.4 RDS(on) - Normalized 180 ID - Amperes 3 VDS - Volts VDS - Volts 5V 2.0 1.8 I D = 100A 1.4 1.2 40 1.0 20 0.8 0 I D = 200A 1.6 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 140 External Lead Current Limit for TO-263 (7-Lead) TJ = 175ºC 2.4 120 100 2 ID - Amperes RDS(on) - Normalized 2.2 VGS = 10V 15V - - - - 1.8 1.6 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 1.4 40 TJ = 25ºC 1.2 20 1 0 0.8 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTA200N075T IXTP200N075T Fig. 8. Transconductance Fig. 7. Input Admittance 160 300 TJ = - 40ºC TJ = - 40ºC 25ºC 150ºC 270 240 140 120 g f s - Siemens ID - Amperes 210 180 150 120 90 25ºC 100 80 150ºC 60 40 60 20 30 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 50 100 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 350 Fig. 10. Gate Charge 10 350 VDS = 38V 9 300 I D = 25A 8 250 I G = 10mA 7 VGS - Volts IS - Amperes 150 I D - Amperes 200 TJ = 150ºC 150 5 4 3 TJ = 25ºC 100 6 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 40 VSD - Volts 80 100 120 140 160 Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 C iss Z(th)JC - ºC / W Capacitance - PicoFarads 60 QG - NanoCoulombs 1,000 C oss f = 1 MHz C rss 100 0 5 0.10 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXTA200N075T IXTP200N075T Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 65 RG = 5Ω 60 65 VGS = 10V 60 VDS = 38V t r - Nanoseconds t r - Nanoseconds 55 50 45 40 35 I D = 50A TJ = 25ºC 55 RG = 5Ω 50 VGS = 10V VDS = 38V 45 40 35 30 TJ = 125ºC 30 I D = 25A 25 25 20 20 25 35 45 55 65 75 85 95 105 115 25 125 30 35 TJ - Degrees Centigrade TJ = 125ºC, VGS = 10V 110 58 95 57 57 90 54 56 51 90 48 80 45 70 42 I D = 50A 60 39 50 36 I D = 25A 40 30 20 4 6 8 10 12 14 16 18 I D = 25A 55 80 54 75 53 65 51 33 50 30 49 27 48 20 60 35 45 55 65 75 85 95 105 115 45 125 Fig. 18. Resistive Turn-off Switching Times vs. Gate Resistance 90 56 85 td(off) - - - - 80 RG = 5Ω, VGS = 10V 75 VDS = 38V 53 70 52 65 51 60 55 TJ = 25ºC 49 TJ = 125ºC, VGS = 10V 150 260 VDS = 38V 130 220 I D = 25A 110 180 90 140 I D = 50A 70 t d ( o f f ) - Nanoseconds TJ = 125ºC 300 td(off) - - - - tf t f - Nanoseconds 57 170 t d ( o f f ) - Nanoseconds t f - Nanoseconds 50 VDS = 38V 25 95 50 55 RG = 5Ω, VGS = 10V TJ - Degrees Centigrade 58 54 td(off) - - - - tf Fig. 17. Resistive Turn-off Switching Times vs. Drain Current tf 70 I D = 50A 52 RG - Ohms 55 85 t d ( o f f ) - Nanoseconds VDS = 38V 100 50 60 t d ( o n ) - Nanoseconds t r - Nanoseconds td(on) - - - - t f - Nanoseconds 130 tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance 120 40 I D - Amperes 100 50 48 45 25 30 35 40 45 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 50 50 60 4 6 8 10 12 14 16 18 20 RG - Ohms IXYS REF: T_200N075T (5V) 6-20-06.xls