Chenmko BZX55C68PT Silicon planar power zener diodes voltage range 0.8v to 200v Datasheet

BZX55C 0V8PT
CHENMKO ENTERPRISE CO.,LTD
THRU
AXIAL LEAD
SILICON PLANAR POWER ZENER DIODES
VOLTAGE RANGE 0.8V TO 200V
BZX55C 200PT
FEATURE
*
*
*
*
*
High temperature soldering type.
ESD rating of class 3(>16 kV) per human body model.
Silicon planar zener diodes.
Silcon-oxide passivated junction.
Low temperature coefficient voltage
DO-35
.022 (0.56)
DIA.
.018 (0.46)
MECHANICAL
*
*
*
*
*
Axial-lead hermetically sealed package.
DO-35 Packaging.
Cathode indicated by polarity band.
Mounting position: Any.
Weight: Approx. 0.13g.
1.02 (26.0)
MIN.
.165 (4.2)
MAX.
.079 (2.0)
MAX.
DIA.
1.02 (26.0)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
DO-35
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
-
-
-
PD
500
mW
TJ
+175
o
C
-55 to +175
o
C
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation
@TL=75oC,Lead
Length=3/8"
Max. Operating Temperature Range
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at IF= 100mA
SYMBOL
R
JA
VF
MIN.
TYP.
MAX.
-
-
300
o
-
-
1.0
Volts
NOTES : 1. The numbers listd have a standaerd tolerance on the normal zener voltage of +5%, Suffix " B "= +2% tolerance.
2. The zener impedance is derived from 1KHz AC voltage, which results when an AC current having an RMS value equal to 10%
of DC zener current (IZT or IZK) is superimposed on IZT or IZK. Zener impedance is measured at two points to insure a sharp knee
on the breakdown curve to eliminate unstable units.
3. Valid provided that electrodes at distance of 8mm from case are kept ambient temperature.
4. Measured under thermal equilibrium and DC test conditions.
5. The rating listd in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT.
UNITS
C/W
2001-6
ELECTRICAL CHARACTERISTIC ( BZX55C 0V8PT THRU BZX55C 200PT )
TYPE
Nominal
Zener
voltage
at
IZT
VZ (V)
Zener Voltage Range
Test
current Zener Voltage
at
IZT (mA)
VZ (V)
Maximum Zener impedance
ZZT
at IZT
( )
ZZK
( )
at
IZK
(mA)
Maximum
Type
reverse leakage current temperature
coefficient
at
(2)
IR
IR
at VR
TA= 25oC
o
(uA) (uA)
(V)
VZ (%/ C)
Maximum
regulator
current
at
Note 2
IZM (mA)
BZX55C 0V8PT
0.8
5
0.73 ~ 0.83
8
50
1.0
-
-
-
-
-
BZX55C 2V0PT
2.0
5
1.9 ~ 2.1
85
600
1.0
100
200
1
-0.09~-0.06
175
BZX55C 2V4PT
2.4
5
2.28 ~ 2.56
85
600
1.0
50
100
1
-0.09~-0.06
145
BZX55C 2V7PT
2.7
5
2.5 ~ 2.9
85
600
1.0
10
50
1
-0.09~-0.06
135
BZX55C 3V0PT
3.0
5
2.8 ~ 3.2
85
600
1.0
4
40
1
-0.08~-0.05
125
BZX55C 3V3PT
3.3
5
3.1 ~ 3.5
85
600
1.0
2
40
1
-0.08~-0.05
115
BZX55C 3V6PT
3.6
5
3.4 ~ 3.8
85
600
1.0
2
40
1
-0.08~-0.05
105
BZX55C 3V9PT
3.9
5
3.7 ~ 4.1
85
600
1.0
2
40
1
-0.08~-0.05
95
BZX55C 4V3PT
4.3
5
4.0 ~ 4.6
75
600
1.0
1
20
1
-0.06~-0.03
90
BZX55C 4V7PT
4.7
5
4.4 ~ 5.0
60
600
1.0
0.5
10
1
-0.05~+0.02
85
BZX55C 5V1PT
3.6
5
4.8 ~ 5.4
35
550
1.0
0.1
2
1
-0.02~+0.02
80
BZX55C 5V6PT
5.6
5
5.2 ~ 6.0
25
450
1.0
0.1
2
1
-0.05~+0.05
70
BZX55C 6V2PT
6.2
5
5.8 ~ 6.6
10
200
1.0
0.1
2
2
0.03~0.06
64
BZX55C 6V8PT
6.8
5
6.4 ~ 7.2
8
150
1.0
0.1
2
3
0.03~0.07
58
BZX55C 7V5PT
7.5
5
7.0 ~ 7.9
7
50
1.0
0.1
2
5
0.03~0.07
53
BZX55C 8V2PT
8.2
5
7.7 ~ 8.7
7
50
1.0
0.1
2
6.2
0.03~0.08
47
BZX55C 9V1PT
9.1
5
8.5 ~ 9.6
10
50
1.0
0.1
2
6.8
0.03~0.09
43
BZX55C 10PT
10
5
9.4 ~ 10.6
15
70
1.0
0.1
2
7.5
0.03~0.11
40
BZX55C 11PT
11
5
10.4 ~ 11.6
20
70
1.0
0.1
2
8.2
0.03~0.11
36
BZX55C 12PT
12
5
11.4 ~ 12.7
20
90
1.0
0.1
2
9.1
0.03~0.11
32
BZX55C 13PT
13
5
12.4 ~ 14.1
26
110
1.0
0.1
2
10
0.03~0.11
29
BZX55C 15PT
15
5
13.8 ~ 15.6
30
110
1.0
0.1
2
11
0.03~0.11
27
BZX55C 16PT
16
5
15.3 ~ 17.1
40
170
1.0
0.1
2
12
0.03~0.11
24
BZX55C 18PT
18
5
16.8 ~ 19.1
50
170
1.0
0.1
2
13
0.03~0.11
21
BZX55C 20PT
20
5
18.8 ~ 21.2
55
220
1.0
0.1
2
15
0.03~0.11
20
BZX55C 22PT
22
5
20.8 ~ 23.3
55
220
1.0
0.1
2
16
0.04~0.12
18
BZX55C 24PT
24
5
22.8 ~ 25.6
80
220
1.0
0.1
2
18
0.04~0.12
16
BZX55C 27PT
27
5
25.1 ~ 28.9
80
220
1.0
0.1
2
20
0.04~0.12
14
BZX55C 30PT
30
5
28 ~ 32
80
220
1.0
0.1
2
22
0.04~0.12
13
BZX55C 33PT
33
5
31 ~ 35
80
220
1.0
0.1
2
24
0.04~0.12
12
BZX55C 36PT
36
5
34 ~ 38
80
220
1.0
0.1
2
27
0.04~0.12
11
BZX55C 39PT
39
2.5
37 ~ 41
90
500
0.5
0.1
5
30
0.04~0.12
10
BZX55C 43PT
43
2.5
40 ~ 46
90
500
0.5
0.1
5
33
0.04~0.12
9.2
BZX55C 47PT
47
2.5
44 ~ 50
110
600
0.5
0.1
5
36
0.04~0.12
8.5
BZX55C 51PT
51
2.5
48 ~ 54
125
700
0.5
0.1
10
39
0.04~0.12
7.8
BZX55C 56PT
56
2.5
52 ~ 60
135
700
0.5
0.1
10
43
0.04~0.12
7.0
BZX55C 62PT
62
2.5
58 ~ 66
150
1000
0.5
0.1
10
47
0.04~0.12
6.4
ELECTRICAL CHARACTERISTIC ( BZX55C 0V8PT THRU BZX55C 200PT )
TYPE
Nominal
Zener
voltage
at
IZT
VZ (V)
Zener Voltage Range
Test
current Zener Voltage
at
IZT (mA)
VZ (V)
Maximum Zener impedance
ZZT
at IZT
( )
ZZK
( )
at
IZK
(mA)
Maximum
Type
reverse leakage current temperature
coefficient
at
(2)
IR
IR
at VR
TA= 25oC
o
(uA) (uA)
(V)
VZ (%/ C)
Maximum
regulator
current
at
Note 2
IZM (mA)
BZX55C 68PT
68
2.5
64 ~ 72
200
1000
0.5
0.1
10
51
0.04~0.12
5.9
BZX55C 75PT
75
2.5
70 ~ 79
250
1000
0.5
0.1
10
56
0.04~0.12
5.3
BZX55C 82PT
82
2.5
77 ~ 87
300
1500
0.25
0.1
10
62
0.05~0.12
4.8
BZX55C 91PT
91
1
85 ~ 96
450
2000
0.1
0.1
10
68
0.05~0.12
4.4
BZX55C 100PT
100
1
94 ~ 106
450
5000
0.1
0.1
10
75
0.05~0.12
4.0
BZX55C 110PT
110
1
104 ~ 116
600
5000
0.1
0.1
10
82
0.05~0.12
3.6
BZX55C 120PT
120
1
114 ~ 117
800
5500
0.1
0.1
10
91
0.05~0.12
3.3
BZX55C 130PT
130
1
124 ~ 141
950
6000
0.1
0.1
10
100
0.05~0.12
3.0
BZX55C 150PT
150
1
138 ~ 156
1250
6500
0.1
0.1
10
110
0.05~0.12
2.7
BZX55C 160PT
160
1
153 ~ 171
1400
7000
0.1
0.1
10
120
0.05~0.12
2.4
BZX55C 180PT
180
1
168 ~ 191
1700
8500
0.1
0.1
10
130
0.05~0.12
2.2
BZX55C 200PT
200
1
188 ~ 212
2000
10000
0.1
0.1
10
150
0.05~0.12
2.0
NOTES : 1. Tested with puless tp=20mS.
2. Vaild provided that leads are kept at ambient temperature at a distance of 8 mm from case.
3. The BZX55C 0V8 is a silicon diode with operation in forward direction. hence, the index of all parameter should be "F"
instead of "Z". Connect the cathode lead to the negative pole.
RATING CHARACTERISTIC CURVE ( BZX55C 0V8PT THRU BZX55C 200PT )
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