Bourns BDT61C Npn silicon power darlington Datasheet

BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDT60, BDT60A, BDT60B and BDT60C
●
50 W at 25°C Case Temperature
●
4 A Continuous Collector Current
●
Minimum hFE of 750 at 1.5 V, 3 A
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
BDT61B
Collector-emitter voltage (IB = 0)
V CBO
80
100
BDT61C
120
BDT61
60
BDT61A
BDT61B
UNIT
60
BDT61
BDT61A
VALUE
VCEO
80
100
V
V
120
BDT61C
VEBO
5
Continuous collector current
IC
4
A
Continuous base current
IB
0.1
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
50
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Emitter-base voltage
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDT61
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
VEC
Collector-emitter
MAX
BDT61A
80
BDT61B
100
BDT61C
120
IC = 30 mA
IB = 0
VCE = 30 V
IB = 0
BDT61
0.5
Collector-emitter
VCE = 40 V
IB = 0
BDT61A
0.5
cut-off current
VCE = 50 V
IB = 0
BDT61B
0.5
breakdown voltage
(see Note 3)
TYP
V
VCE = 60 V
IB = 0
BDT61C
0.5
VCB = 60 V
IE = 0
BDT61
0.2
VCB = 80 V
IE = 0
BDT61A
0.2
VCB = 100 V
IE = 0
BDT61B
0.2
Collector cut-off
VCB = 120 V
IE = 0
BDT61C
0.2
current
VCB = 30 V
IE = 0
TC = 150°C
BDT61
2.0
VCB = 40 V
IE = 0
TC = 150°C
BDT61A
2.0
VCB = 50 V
IE = 0
TC = 150°C
BDT61B
2.0
VCB = 60 V
IE = 0
TC = 150°C
BDT61C
2.0
VEB =
5V
IC = 0
VCE =
3V
IC = 1.5 A
(see Notes 3 and 4)
6 mA
IC = 1.5 A
3V
IC = 1.5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
IB =
VCE =
IE =
1.5 A
UNIT
60
mA
mA
5
mA
(see Notes 3 and 4)
2.5
V
(see Notes 3 and 4)
2.5
V
2
V
750
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.5
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 2 A
IB(on) = 8 mA
IB(off) = -8 mA
toff
Turn-off time
VBE(off) = -5 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
1
µs
4.5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS110AD
20000
TC = -40°C
TC = 25°C
TC = 100°C
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
1000
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
1·0
TCS110AB
2·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
0·5
5·0
TC = -40°C
TC = 25°C
TC = 100°C
0
0·5
IC - Collector Current - A
1·0
5·0
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS110AB
1·0
0·1
BDT61
BDT61A
BDT61B
BDT61C
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS110AA
Ptot - Maximum Power Dissipation - W
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MDXXBE
5
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