NS6A5.0AFT3G, SZNS6A5.0AFT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors http://onsemi.com Unidirectional The NS6AxxAFT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. This device has excellent clamping capability, high surge capability, low zener impedance and fast response time. The NS6AxxAFT3G series is ideally suited for use in computer hard disk drives, communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS Cathode Anode Specification Features: • • • • • • • • Peak Reverse Working Voltage Range − 5 V to 64 V Peak Pulse Power of 600 W (10 x 1000 msec) ESD Rating of Class 3 (>16 kV) per Human Body Model ESD Rating of Class 4 (>8 kV) IEC 61000−4−2 Fast Response Time Low Profile Package SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable SMA−FL CASE 403AA MARKING DIAGRAM xxx AYWWG xxx A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds LEADS: Modified L−Bend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 2 1 Device NS6AxxAFT3G, SZNS6AxxAFT3G Package Shipping† SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NS6A5.0AF/D NS6A5.0AFT3G, SZNS6A5.0AFT3G Series MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms PPK 600 W DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2) Derate Above 75°C Thermal Resistance from Junction−to−Lead PD 1.5 W RqJL 20 50 mW/°C °C/W W mW/°C °C/W DC Power Dissipation (Note 3) @ TA = 25°C Derate Above 25°C Thermal Resistance from Junction−to−Ambient PD RqJA 0.5 4.0 250 Forward Surge Current (Note 4) @ TA = 25°C IFSM 40 A TJ, Tstg −65 to +150 °C Operating and Storage Temperature Range 1. 2. 3. 4. 10 X 1000 ms, non−repetitive. 1 in square copper pad, FR−4 board. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403AA case outline dimensions spec. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 3.5 V Max. @ IF (Note 5) = 30 A) Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IF Parameter VC VBR VRWM Working Peak Reverse Voltage IR VF IT Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS 5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, non−repetitive duty cycle. http://onsemi.com 2 V NS6A5.0AFT3G, SZNS6A5.0AFT3G Series ELECTRICAL CHARACTERISTICS Breakdown Voltage VRWM (Note 6) IR @ VRWM V mA Device* Device Marking NS6A5.0AFT3G 6AA 5 NS6A6.0AFT3G 6AB 6 NS6A6.5AFT3G 6AC NS6A7.0AFT3G 6AD NS6A7.5AFT3G NS6A8.0AFT3G VC @ IPP (Note 8) @ IT VC IPP Ctyp (Note 9) Max mA V A pF VBR (Note 7) Volts Min Nom 800 6.4 6.70 7 10 9.2 65.2 2700 800 6.67 7.02 7.37 10 10.3 58.3 2300 6.5 500 7.22 7.60 7.98 10 11.2 53.6 2140 7 500 7.78 8.19 8.6 10 12 50 2005 6AE 7.5 100 8.33 8.77 9.21 1 12.9 46.5 1890 6AF 8 50 8.89 9.36 9.83 1 13.6 44.1 1780 NS6A8.5AFT3G 6AG 8.5 10 9.44 9.92 10.4 1 14.4 41.7 1690 NS6A9.0AFT3G 6AH 9 5 10 10.55 11.1 1 15.4 39 1605 NS6A10AFT3G 6AI 10 5 11.1 11.70 12.3 1 17 35.3 1460 NS6A11AFT3G 6AL 11 5 12.2 12.85 13.5 1 18.2 33 1345 NS6A12AFT3G 6AJ 12 5 13.3 14.00 14.7 1 19.9 30.2 1245 NS6A13AFT3G 6AK 13 5 14.4 15.15 15.9 1 21.5 27.9 1160 NS6A14AFT3G 6AM 14 5 15.6 16.40 17.2 1 23.2 25.8 1085 NS6A15AFT3G 6AN 15 5 16.7 17.60 18.5 1 24.4 24 1020 NS6A16AFT3G 6AO 16 5 17.8 18.75 19.7 1 26 23.1 965 NS6A17AFT3G 6AP 17 5 18.9 19.90 20.9 1 27.6 21.7 915 NS6A18AFT3G 6AQ 18 5 20 21.05 22.1 1 29.2 20.5 870 NS6A20AFT3G 6AR 20 5 22.2 23.35 24.5 1 32.4 18.5 790 NS6A22AFT3G 6AS 22 5 24.4 25.65 26.9 1 35.5 16.9 730 NS6A24AFT3G 6AT 24 5 26.7 28.10 29.5 1 38.9 15.4 675 NS6A26AFT3G 6AU 26 5 28.9 30.40 31.9 1 42.1 14.2 630 NS6A28AFT3G 6AV 28 5 31.1 32.75 34.4 1 45.4 13.2 590 NS6A30AFT3G 6AW 30 5 33.3 35.05 36.8 1 48.4 12.4 555 NS6A33AFT3G 6AX 33 5 36.7 38.65 40.6 1 53.3 11.3 510 NS6A36AFT3G 6AY 36 5 40 42.10 44.2 1 58.1 10.3 470 NS6A40AFT3G 6AZ 40 5 44.4 46.75 49.1 1 64.5 9.3 430 NS6A43AFT3G 6A0 43 5 47.8 50.30 52.8 1 69.4 8.6 400 NS6A45AFT3G 6A1 45 5 50 52.65 55.3 1 72.2 8.3 385 NS6A48AFT3G 6A2 48 5 53.3 56.10 58.9 1 77.4 7.7 365 NS6A51AFT3G 6A3 51 5 56.7 59.70 62.7 1 82.4 7.3 345 NS6A54AFT3G 6A4 54 5 60 63.15 66.3 1 87.1 6.9 330 NS6A58AFT3G 6A5 58 5 64.4 67.80 71.2 1 93.6 6.4 310 NS6A60AFT3G 6A7 60 5 66.7 70.20 73.7 1 96.8 6.2 300 NS6A64AFT3G 6A8 64 5 71.1 74.85 78.6 1 103 5.8 280 *Includes SZ−prefix devices where applicable. 6. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than the DC or continuous peak operating voltage level. 7. VBR measured at pulse test current IT at an ambient temperature of 25°C. 8. Surge current waveform per Figure 1. 9. Bias Voltage = 0 V, F = 1 MHz, TJ = 25°C. http://onsemi.com 3 NS6A5.0AFT3G, SZNS6A5.0AFT3G Series tr≤ 10 ms 100 VALUE (%) PEAK VALUE - IPP HALF VALUE 50 IPP 2 tP 0 0 1 2 3 160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25° C PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IPP. 140 120 100 80 60 40 20 0 4 0 25 50 75 100 t, TIME (ms) TA, AMBIENT TEMPERATURE (°C) Figure 1. 10 × 1000 ms Pulse Waveform Figure 2. Pulse Derating Curve Zin LOAD Vin VL Figure 3. Typical Protection Circuit http://onsemi.com 4 125 150 NS6A5.0AFT3G, SZNS6A5.0AFT3G Series PACKAGE DIMENSIONS SMA−FL CASE 403AA ISSUE O E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A b c D E E1 L D TOP VIEW A MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 RECOMMENDED SOLDER FOOTPRINT* c C SIDE VIEW 2X SEATING PLANE 5.56 1.76 b 1.30 2X DIMENSIONS: MILLIMETERS L *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW SURMETIC is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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