AP40U03GH
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
25mΩ
ID
G
20A
S
Description
The Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design, low□
on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current
20
A
ID@TC=100℃
Continuous Drain Current
14
A
1
IDM
Pulsed Drain Current
60
A
PD@TC=25℃
Total Power Dissipation
15
W
Linear Derating Factor
0.1
W/℃
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
10
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200720071-1/4
AP40U03GH
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=12A
-
-
25
mΩ
VGS=4.5V, ID=8A
-
-
40
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=12A
-
12
-
S
IDSS
Drain-Source Leakage Current (T j=25 C)
VDS=30V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=12A
-
8
13
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
VDS=15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=12A
-
36.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=1.25Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.1
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=12A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time2
IS=12A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
15
-
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP40U03GH
40
60
10V
7.0 V
5.0V
4.5 V
ID , Drain Current (A)
50
T C =175 o C
ID , Drain Current (A)
o
T C =25 C
40
30
20
V G = 3.0 V
10V
7 .0V
5.0V
4.5 V
30
20
V G =3.0V
10
10
0
0
0.0
1.0
2.0
3.0
0.0
4.0
V DS , Drain-to-Source Voltage (V)
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
36
I D =12A
I D =12A
V G =10V
T C =25 o C
32
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
28
24
1.2
0.8
20
0.4
16
2
4
6
8
-50
10
0
50
100
150
200
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
16
T j =175 o C
12
Normalized VGS(th) (V)
IS(A)
1.2
o
T j =25 C
8
0.8
0.4
4
0
0.0
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP40U03GH
16
f=1.0MHz
1000
C iss
12
V DS =15V
V DS =18V
V DS =24V
C (pF)
VGS , Gate to Source Voltage (V)
I D =12A
8
C oss
C rss
100
4
10
0
0
4
8
12
16
1
20
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
10
ID (A)
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
V DS ,Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part
Package Code
meet Rohs requirement
40U03GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence