C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.5 dB TYP at 12 GHz • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION NF 0 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1 2 ELECTRICAL CHARACTERISTICS 4 6 8 10 14 20 4 30 Frequency, f (GHz) RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS CHARACTERISTICS VDS Drain to Source Voltage UNITS MIN TYP MAX V 2 3 10 20 ID Drain Current mA Pin Input Power dBm 0 (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS Associated Gain, GA (dB) Noise Figure, NF (dB) 20 PARAMETERS AND CONDITIONS NE325S01 S01 UNITS MIN TYP MAX 0.45 0.55 NF1 Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz GA1 Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 11.0 IDSS Saturated Drain Current, VDS = 2 V, VGS = 0 V mA 20 60 Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 Gate to Source Cutoff Voltage, VDS = 2 V,ID = 100 µA V -0.2 -0.7 -2.0 Gate to Source Leak Current, VGS = -3 V µA 0.5 10 gm VGS(off) IGSO dB 12.5 90 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE325S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 ID Drain Current mA IDSS IG Gate Current µA 100 PT Total Power Dissipation mW 165 TCH Channel Temperature °C 125 Tstg Storage Temperature °C -65 to +125 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2V f = 12 GHz 14 Ga 13 12 2.0 11 1.5 10 1.0 0.5 NF 0 10 20 30 Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 100 200 80 Drain Current, ID (mA) Total Power Dissipation, PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 100 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 50 -0.6 V -0.8 V 0 50 100 150 200 0 250 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, IS21Sl2 (dB) 24 Drain Current, ID (mA) VDS = 2 V 60 40 20 VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 IS21sl 2 12 8 4 0 -2.0 -1.0 Gate to Source Voltage, VGS (V) 0 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 Associated Gain, GA (dB) PARAMETERS Noise Figure, NF (dB) SYMBOLS NE325S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1.0 +90° 0.5 18 GHz +135° 2.0 S21 2 GHz 18 GHz 0 S22 2 GHz S12 2 GHz +180° ∞ 0 18 GHz S11 2 GHz - 0.5 +45° 18 GHz Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 10 mA - 2.0 -135° -45° - 1.5 -90° VDS = 2 V, ID = 10 mA FREQUENCY S11 (GHz) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 MAG 0.969 0.957 0.944 0.926 0.906 0.884 0.852 0.819 0.785 0.753 0.723 0.696 0.670 0.643 0.622 0.597 0.571 0.538 0.503 0.475 0.453 0.435 0.422 0.413 0.408 0.405 0.406 0.410 0.418 0.434 0.455 0.484 0.521 S21 ANG -24.84 -30.87 -36.91 -43.10 -49.43 -55.58 -62.02 -68.28 -74.48 -80.82 -87.00 -93.23 -99.64 -105.78 -112.38 -119.18 -126.73 -134.31 -142.42 -150.84 -160.32 -170.10 179.93 169.88 159.68 149.30 138.94 128.31 117.54 106.98 96.84 87.21 77.71 MAG 4.798 4.756 4.730 4.699 4.663 4.600 4.523 4.449 4.370 4.276 4.200 4.136 4.066 4.011 3.968 3.920 3.857 3.799 3.740 3.621 3.545 3.482 3.423 3.362 3.309 3.250 3.182 3.108 3.031 2.943 2.869 2.799 2.720 S12 ANG 152.65 146.03 139.49 132.75 126.04 119.31 112.42 105.80 99.62 93.42 87.18 81.15 75.30 69.03 63.04 56.93 50.48 44.20 38.29 32.04 25.99 20.11 14.37 8.03 1.70 -4.80 -11.37 -18.01 -24.47 -30.70 -37.11 -43.55 -50.10 MAG 0.026 0.032 0.038 0.044 0.050 0.055 0.060 0.064 0.068 0.072 0.075 0.078 0.081 0.084 0.087 0.090 0.092 0.094 0.096 0.098 0.099 0.101 0.102 0.103 0.104 0.106 0.107 0.108 0.109 0.110 0.111 0.111 0.111 S22 ANG 73.02 68.77 64.98 60.81 56.76 52.64 48.77 44.73 41.16 37.54 34.03 30.60 27.44 24.34 21.18 18.07 14.85 11.58 8.35 5.11 1.78 -1.21 -4.53 -7.66 -11.00 -14.39 -17.92 -21.80 -25.41 -29.36 -33.17 -37.06 -41.23 MAG 0.574 0.566 0.556 0.544 0.531 0.515 0.496 0.475 0.454 0.434 0.414 0.396 0.379 0.363 0.347 0.330 0.308 0.287 0.262 0.237 0.214 0.191 0.173 0.160 0.151 0.145 0.144 0.148 0.154 0.168 0.188 0.214 0.246 ANG -18.45 -22.99 -27.48 -32.03 -36.56 -41.22 -45.75 -50.42 -55.09 -59.78 -64.50 -69.09 -73.80 -78.31 -82.72 -87.24 -91.89 -96.77 -102.63 -109.34 -116.89 -126.44 -137.47 -149.76 -161.84 -174.45 171.72 157.82 142.64 127.26 114.01 102.68 92.62 K MAG1 0.237 0.277 0.310 0.358 0.403 0.454 0.524 0.595 0.659 0.716 0.771 0.816 0.854 0.894 0.919 0.950 0.995 1.047 1.100 1.156 1.200 1.227 1.255 1.278 1.294 1.302 1.316 1.330 1.343 1.350 1.344 1.330 1.303 (dB) 22.661 21.721 20.951 20.286 19.697 19.224 18.773 18.421 18.080 17.737 17.482 17.245 17.007 16.790 16.591 16.390 16.225 14.743 13.983 13.284 12.834 12.500 12.220 11.970 11.771 11.572 11.364 11.155 10.940 10.739 10.619 10.577 10.591 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.6nH Rdx 6 ohms Rgx 0.69nH 6 ohms CGS_PKG 0.07pF Lsx 0.07nH CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.8 RG 3 time VTOSC 0 RD 2 capacitance farads henries ohms seconds ALPHA 8 RS 2 inductance BETA 0.103 RGMET 0 resistance GAMMA 0.092 KF 0 voltage volts GAMMADC 0.08 AF 1 current amps Q 2 TNOM 27 DELTA 1 XTI 3 VBI 0.715 EG 1.43 IS 3e-13 VTOTC 0 N 1.22 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 4e-12 CDS 0.13e-12 RDB 5000 CBS 1e-9 CGSO 0.3e-12 CGDO 0.02e-12 DELTA1 0.3 DELTA2 0.1 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 NE325S01 TYPICAL NOISE PARAMETERS (TA = 25°C) OUTLINE DIMENSIONS (Units in mm) VDS = 2 V, ID = 10 mA PACKAGE OUTLINE S01 2.0 ± 0.2 2. ± D 2.0 ± 0.2 0.5 TYP. 2 0. 2 NFMIN GA (GHz) (dB) (dB) MAG ANG Rn/50 2 0.29 20.0 0.93 14 0.38 4 0.30 18.3 0.80 29 0.33 6 0.32 16.5 0.65 48 0.25 8 0.35 15.0 0.49 72 0.18 10 0.40 13.6 0.36 102 0.11 12 0.45 12.5 0.27 139 0.08 14 0.53 12.0 0.24 -176 0.07 16 0.67 11.8 0.30 -122 0.10 18 0.83 11.5 0.47 -58 0.22 ΓOPT 0 1 FREQ. 4 3 1. 2. 3. 4. 1.5 MAX 0.65 TYP. 1.9 ± 0.2 1.6 Source Drain Source Gate 0.125 ± 0.05 TYPICAL CONSTANT NOISE FIGURE CIRCLE (VDS = 2 V, ID = 10 mA, f = 12 GHz) 1 0.4 MAX 4.0 ± 0.2 0.6 2 5 0.2 * Γopt ORDERING INFORMATION PART NUMBER SUPPLY FORM PACKAGE OUTLINE NE325S01 Bulk S01 NE325S01-T1 Tape & Reel 1000 pcs./reel S01 NE325S01-T1B Tape & Reel 4000 pcs./reel S01 0 0.6 0.2 1.0 ∞ 2.0 0.8 1.0 -0.2 -5 -2 -0.6 -1 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 04/29/2002