BL8595 18V/1A PNP with N-MOSFET CHARGE IC DESCRIPTION FEATURES BL8595 is designed for battery charging controller with patent BICMOS process, which features PNP characteristics and a NMOS for base current blocking. Such base current blocking feature cut off the base current of PNP transistor when source current of NMOS is removed, or the gate voltage indicating the NMOS off. BL8595 is also suitable for high side switch in a system with multi power supplies, when isolating different power supplies becomes essential. APPLICATIONS Range of operation input voltage: Max 18V Charging current up to 1A Operation dropout voltage:0.3V@500mA High isolating N-MOSFET Package type:SOT23-6 Environment Temperature: -20C~85C Cell phone and other portable device BL8595 can block reverse voltage as high as 10V. So it is safe enough for mobile phone system or other portable device powered by 1 cell Li-ion battery. BL8595 is available in SOT23-6L. MARKING ORDERING INFORMATION BL8595 □ 1 □ 2 □ 3 Code Description □1 Temperature&Rohs: C:-40~85C ,Pb Free Rohs Std. □2 Package type: B6:SOT-23-6 □3 Packing type: TR:Tape&Reel (Standard) PIN CONFIGURATION BL8595CB6TR (SOT23-6) Symbol Description 1 CHR NMOS Gate 2 C PNP Collect 3 B 4 E PNP Base (NMOS Drain) PNP Emit 5 C PNP Collect 6 GATDV NMOS Source www.belling.com.cn Notice: YW means the year and week parts being manufactured, subjected to change. OC is the code of the product, it will not be changed on any part. 1 BL8595 FUNCTION DIAGRAM TYPICAL APPLICATION CIRCUIT BL8595 www.belling.com.cn 2 BL8595 ABSOLUTE MAXIMUM RATING Parameter Symbol Collector-base Voltage(IE=0) (PNP) Collector-emitter Voltage(IB=0) (PNP) Emitter-base Voltage(IC=0) (PNP) Collector Current (PNP) Base Current (PNP) Forward Voltage(Source-Drain) (MOSFET) Gate-Source Voltage (MOSFET) Source Current (MOSFET) Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range Soldering Recommendations (Peak Temperature) 5 sec VCB0 VCE0 VEB0 IC IB VSD VGS IS PD TJ Tstg Steady State Unit -18 -18 -10 1.5 -0.2 V V V A A 1 -0.1 -20 20 V -0.15 -0.1 1.5 1 −20 to 125 -40 to 150 260(<10s) A W C THERMAL RESISTANCE RATING Parameter Junction-to-Ambient Junction to Case Device t ≤ 5 sec Steady State Steady State Symbol SOT23-6 SOT23-6 SOT23-6 RthJA RthJC Typ Max Unit 90 120 60 105 150 80 C /W ELECTRICAL CHARACTERISTICS TJ=25C Symbol Parameter Conditions Min Typ Max Unit ICB0 Collector cut-off current(IE=0) (PNP) VCB=-18V -0.1 uA IEB0 Collector cut-off current(IC=0) (PNP) Collector-emitter breakdown Voltage (IB=0) (PNP) VEB=-10V -0.1 uA IC=-10uA -25 -20 -0.4 -0.5 -0.8 -1.1 -1.1 -1.2 -1.0 -0.2 -0.3 -0.5 -0.80 -0.83 -0.90 -0.73 BVCE0 -18 V Base-emitter Voltage (PNP) IC=-0.4A IC=-0.6A IC=-1A IC=-0.4A IC=-0.6A IC=-1A IC=-0.5A hFE DC current gain (PNP) IC=-0.6A 100 Vth Threshold Voltage (MOSFET) Ids=1uA, Vds=Vgs 0.9 1.3 1.7 V Igs Gate-source leakage current (MOSFET) Vgs=-20V -1 -0.1 1 uA Idss Off-state leakage (MOSFET) Vg=0, Vs=0V, Vd=10V 1 3 uA Idson On –state drain current (MOSFET) Vs=0.5V, Vg=3.6V, Vd=5V 15 25 mA VCE(sat) Collector-emitter saturation Voltage (PNP) VBE(sat) Base-emitter saturation Voltage (PNP) VBE(on) www.belling.com.cn 3 VCE=-1V 5 V V V V V BL8595 TYPICAL PERFORMANCE CHARACTERISTICS T=25°C unless specified. Collector-emitter Current(ICE) Vs.Voltage(VCE),IB=0 PNP Output 1500 1.2E-04 -20℃ 25℃ 85℃ -ICE(mA) 1000 IB=-1mA IB=-10mA IB=-20mA IB=-30mA 500 -ICE(A) 1.0E-04 6.0E-05 4.0E-05 2.0E-05 0 0.0E+00 0 0.5 -VCE(V) 1 1.5 0 Dropout Voltage(VCE) Vs.Charge Current(ICE),T=-20℃ 1.2 8.0E-05 0.8 0.8 -VCE(V) -VCE(V) 1 0.6 0.4 IB=-1mA IB=-10mA IB=-20mA 0.2 500 1000 1500 0.4 30 IB=-1mA IB=-10mA IB=-20mA 0 0 2000 500 1000 -ICE(mA) 1500 2000 -ICE(mA) Dropout Voltage(VCE) Vs.Charge Current(ICE),T=85℃ 1.2 20 0.6 0.2 0 0 -VCE(V) Dropout Voltage(VCE) Vs.Charge Current(ICE),T=25℃ 1.2 1 10 NMOS Threshold Voltage,Vds=Vgs 1.E-01 1.E-03 0.8 Ids(A) -VCE(V) 1 0.6 0.4 IB=-1mA IB=-10mA IB=-20mA 0.2 0 500 -ICE(mA) 1000 1.E-07 1.E-09 0 1500 NMOS Off-state leakage,Vg=Vs=0V -20℃ 25℃ 85℃ 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 1.E-08 1.E-09 1.E-10 1.E-11 1.E-12 1 2 3 Vgs(V) 4 5 6 NMOS Drain Current(Ids) Vs.Gate Voltage,Vs=0.5V,Vd=5V -20℃ 25℃ 85℃ 60 50 Ids(mA) Ids(A) 0 1.E-05 40 30 20 10 0 0 5 www.belling.com.cn 10 Vds(V) 15 0 20 1 2 3 Vg(V) 4 4 5 BL8595 PACKAGE OUTLINE www.belling.com.cn 5