Mitsubishi MGF0904A High-power gaas fet (small signal gain stage) Datasheet

< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
DESCRIPTION
OUTLINE DRAWING
The MGF0904A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
Unit : m illim eters
FEATURES
①
4.4+0/-0.3
2MIN
 High output power
Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
 High power gain
Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
 High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBm
②
②
φ2.2
2MIN
APPLICATION
0.6±0.2
 For UHF Band power amplifiers
③
QUALITY
 GG
 Vds=8V
 Ids=200mA
 Rg=500
Refer to Bias Procedure
Symbol
VGDO
VGSO
ID
IGR
IGF
PT*1
Tch
Tstg
(Ta=25C)
Parameter
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
0.65
9.0±0.2
Absolute maximum ratings
14.0
Ratings
Unit
-17
-17
800
-2.5
5.4
3.75
175
-65 to +175
V
V
mA
mA
mA
W
C
C
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
GF-7
*1:Tc=25C
Electrical characteristics
Symbol
(Ta=25C)
Parameter
Test conditions
Limits
Min.
IDSS
Saturated drain current
VDS=3V,VGS=0V
400
550
gm
Transconductance
VDS=3V,ID=300mA
120
200
VGS(off)
Po
Gate to source cut-off voltage
VDS=3V,ID=2.5mA
-1
-3
-5
V
Output power
VDS=8V,ID(RF off)=200mA
26
28
-
dBm
P.A.E.
Power added efficiency
f=1.65GHz,Pin=15dBm
-
40
-
%
Rth(ch-c) *2
Thermal resistance
ΔVf method
-
-
40
C/W
Rth(ch-a) *3
Thermal resistance
ΔVf method
-
-
100
C/W
Publication Date : Apr., 2011
1
Typ.
Unit
Max.
800
-
*2 :Channel-case
*3 :Channel-ambient
1.9±0.4
RECOMMENDED BIAS CONDITIONS
1.65
0.1
5.0
mA
mS
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
MGF0904A TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS
ID vs. VDS
Po, PAE vs. Pin
Po, PAE vs. VDS
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
MGF0904A S-parameters( Ta=25deg.C , VDS=8(V),IDS=200(mA) )
S11,S22 vs. f
S21,S12 vs. f
S Parameters(Typ.)
f
S11
(GHz)
Magn.
S21
Angle(deg.)
S12
Magn.
Angle(deg.)
Magn.
S22
Angle(deg.)
Magn.
Angle(deg.)
K
MSG/MAG
-
dB
0.5
0.851
-99.0
6.855
116.0
0.055
31.0
0.338
-149.0
0.277
21.0
1.0
0.801
-138.0
4.265
89.0
0.064
22.5
0.368
-162.0
0.521
18.2
1.5
0.788
-161.5
3.192
71.0
0.072
13.0
0.390
-173.3
0.655
16.5
2.0
0.740
-177.0
2.544
52.0
0.079
4.0
0.409
-178.0
0.847
15.1
2.5
0.713
176.5
2.180
30.0
0.085
-7.0
0.411
177.0
0.940
14.1
3.0
0.670
171.5
2.040
9.0
0.091
-18.0
0.402
172.0
1.070
11.9
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
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Publication Date : Apr., 2011
4
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