< High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3 2MIN High output power Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm High power gain Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm High power added efficiency P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBm ② ② φ2.2 2MIN APPLICATION 0.6±0.2 For UHF Band power amplifiers ③ QUALITY GG Vds=8V Ids=200mA Rg=500 Refer to Bias Procedure Symbol VGDO VGSO ID IGR IGF PT*1 Tch Tstg (Ta=25C) Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature 0.65 9.0±0.2 Absolute maximum ratings 14.0 Ratings Unit -17 -17 800 -2.5 5.4 3.75 175 -65 to +175 V V mA mA mA W C C (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-7 *1:Tc=25C Electrical characteristics Symbol (Ta=25C) Parameter Test conditions Limits Min. IDSS Saturated drain current VDS=3V,VGS=0V 400 550 gm Transconductance VDS=3V,ID=300mA 120 200 VGS(off) Po Gate to source cut-off voltage VDS=3V,ID=2.5mA -1 -3 -5 V Output power VDS=8V,ID(RF off)=200mA 26 28 - dBm P.A.E. Power added efficiency f=1.65GHz,Pin=15dBm - 40 - % Rth(ch-c) *2 Thermal resistance ΔVf method - - 40 C/W Rth(ch-a) *3 Thermal resistance ΔVf method - - 100 C/W Publication Date : Apr., 2011 1 Typ. Unit Max. 800 - *2 :Channel-case *3 :Channel-ambient 1.9±0.4 RECOMMENDED BIAS CONDITIONS 1.65 0.1 5.0 mA mS < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched MGF0904A TYPICAL CHARACTERISTICS( Ta=25deg.C ) ID vs. VGS ID vs. VDS Po, PAE vs. Pin Po, PAE vs. VDS Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched MGF0904A S-parameters( Ta=25deg.C , VDS=8(V),IDS=200(mA) ) S11,S22 vs. f S21,S12 vs. f S Parameters(Typ.) f S11 (GHz) Magn. S21 Angle(deg.) S12 Magn. Angle(deg.) Magn. S22 Angle(deg.) Magn. Angle(deg.) K MSG/MAG - dB 0.5 0.851 -99.0 6.855 116.0 0.055 31.0 0.338 -149.0 0.277 21.0 1.0 0.801 -138.0 4.265 89.0 0.064 22.5 0.368 -162.0 0.521 18.2 1.5 0.788 -161.5 3.192 71.0 0.072 13.0 0.390 -173.3 0.655 16.5 2.0 0.740 -177.0 2.544 52.0 0.079 4.0 0.409 -178.0 0.847 15.1 2.5 0.713 176.5 2.180 30.0 0.085 -7.0 0.411 177.0 0.940 14.1 3.0 0.670 171.5 2.040 9.0 0.091 -18.0 0.402 172.0 1.070 11.9 Publication Date : Apr., 2011 3 < High-power GaAs FET (small signal gain stage) > MGF0904A L & S BAND / 0.6W non - matched Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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