J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. MMBFJ309 MMBFJ310 J309 J310 G S G S SOT-23 TO-92 D D Mark MMBFJ309 : 6U MMBFJ310 : 6T Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value Units VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Current 10 mA - 55 to +150 °C TJ, Tstg Operating and Storage Junction Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol Ta = 25°C unless otherwise noted Max. Parameter J309-J310 *MMBFJ309-310 Total Device Dissipation Derate above 25°C 625 5.0 RθJC Thermal Resistance, Junction to Case 127 RθJA Thermal Resistance, Junction to Ambient 357 PD 350 2.8 Units mW mW/°C °C/W 556 °C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06". © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 1 J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier December 2010 Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units -1.0 -1.0 nA μA Off Characteristics BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0 IGSS VGS(off) -25 V Gate Reverse Current VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, Ta = 125°C Gate-Source Cutoff Voltage VDS = 10V, ID = 1.0nA 309 310 -1.0 -2.0 -4.0 -6.5 V V Zero-Gate Voltage Drain Current* VDS = 10V, VGS = 0 309 310 12 24 30 60 mA mA Gate-Source Forward Voltage VDS = 0, IG = 1.0mA 1.0 V On Characteristics IDSS VGS(f) Small Signal Characteristics Re(yis) Re(yos) Common-Source Input Conductance VDS = 10V, ID = 10mA, f = 100MHz 309 310 0.7 0.5 mmhos mmhos Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 100MHz 0.25 mmhos Gpg Common-Gate Power Gain VDS = 10V, ID = 10mA, f = 100MHz 16 dB Re(yfs) Common-Source Forward Transconductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos Re(yig) Common-Gate Input Conductance VDS = 10V, ID = 10mA, f = 100MHz 12 mmhos Common-Source Forward Transconductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 10,000 310 8,000 goss Common-Source Output Conductance VDS = 10V, ID = 10mA, f = 1.0kHz gfg Common-Gate Forward Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 13,000 12,000 μmhos μmhos Common-Gate Output Conductance VDS = 10V, ID = 10mA, f = 1.0kHz 309 310 100 150 μmhos μmhos Cdg Drain-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 2.0 2.5 pF Csg Source-Gate Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 4.1 5.0 pF NF Noise Figure VDS = 10V, ID = 10mA, f = 450MHz 3.0 dB en Equivalent Short-Circuit Input Noise Voltage VDS = 10V, ID = 10mA, f = 100Hz 6.0 nV/ Hz gfs gog 20,000 μmhos 18,000 μmhos 150 μmhos * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 2 J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Electrical Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Transfer Characteristics Forward Transadmittance Input Admittance © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 3 J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics (continued) Common Drain-Source Output Conductance vs. Drain Current Output Admittance Capacitance vs. Voltage Noise Voltage vs. Frequency Reverse Transadmittance © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 4 Transconductance vs. Drain Current Parameter Interactions Leakage Current vs. Voltage P D - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 700 600 TO-92 500 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 125 150 www.fairchildsemi.com 5 J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier Typical Performance Characteristics (continued) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I50 © Fairchild Semiconductor Corporation www.fairchildsemi.com