Fairchild J310 N-channel rf amplifier Datasheet

J309 / J310 / MMBFJ309 / MMBFJ310
N-Channel RF Amplifier
Features
•
•
•
•
This device is designed for VHF/UHF amplifier, oscillator and mixer applications.
As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized.
Sourced from Process 92.
Source & Drain are interchangeable.
MMBFJ309
MMBFJ310
J309
J310
G
S
G
S
SOT-23
TO-92
D
D
Mark MMBFJ309 : 6U
MMBFJ310 : 6T
Absolute Maximum Ratings * Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
-25
V
IGF
Forward Gate Current
10
mA
- 55 to +150
°C
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics
Symbol
Ta = 25°C unless otherwise noted
Max.
Parameter
J309-J310 *MMBFJ309-310
Total Device Dissipation
Derate above 25°C
625
5.0
RθJC
Thermal Resistance, Junction to Case
127
RθJA
Thermal Resistance, Junction to Ambient
357
PD
350
2.8
Units
mW
mW/°C
°C/W
556
°C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
www.fairchildsemi.com
1
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
December 2010
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
-1.0
-1.0
nA
μA
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0μA, VDS = 0
IGSS
VGS(off)
-25
V
Gate Reverse Current
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, Ta = 125°C
Gate-Source Cutoff Voltage
VDS = 10V, ID = 1.0nA
309
310
-1.0
-2.0
-4.0
-6.5
V
V
Zero-Gate Voltage Drain
Current*
VDS = 10V, VGS = 0
309
310
12
24
30
60
mA
mA
Gate-Source Forward Voltage
VDS = 0, IG = 1.0mA
1.0
V
On Characteristics
IDSS
VGS(f)
Small Signal Characteristics
Re(yis)
Re(yos)
Common-Source Input
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
309
310
0.7
0.5
mmhos
mmhos
Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
0.25
mmhos
Gpg
Common-Gate Power Gain
VDS = 10V, ID = 10mA, f = 100MHz
16
dB
Re(yfs)
Common-Source Forward
Transconductance
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
Re(yig)
Common-Gate Input
Conductance
VDS = 10V, ID = 10mA, f = 100MHz
12
mmhos
Common-Source Forward
Transconductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309 10,000
310 8,000
goss
Common-Source Output
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
gfg
Common-Gate Forward
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309
310
13,000
12,000
μmhos
μmhos
Common-Gate Output
Conductance
VDS = 10V, ID = 10mA, f = 1.0kHz
309
310
100
150
μmhos
μmhos
Cdg
Drain-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
2.0
2.5
pF
Csg
Source-Gate Capacitance
VDS = 0, VGS = -10V, f = 1.0MHz
4.1
5.0
pF
NF
Noise Figure
VDS = 10V, ID = 10mA, f = 450MHz
3.0
dB
en
Equivalent Short-Circuit Input
Noise Voltage
VDS = 10V, ID = 10mA, f = 100Hz
6.0
nV/ Hz
gfs
gog
20,000 μmhos
18,000 μmhos
150
μmhos
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
www.fairchildsemi.com
2
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Electrical Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Transfer Characteristics
Forward Transadmittance
Input Admittance
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
www.fairchildsemi.com
3
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics (continued)
Common Drain-Source
Output Conductance vs.
Drain Current
Output Admittance
Capacitance vs. Voltage
Noise Voltage vs. Frequency
Reverse Transadmittance
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
www.fairchildsemi.com
4
Transconductance vs.
Drain Current
Parameter Interactions
Leakage Current vs. Voltage
P D - POWER DISSIPATION (mW)
Power Dissipation vs
Ambient Temperature
700
600
TO-92
500
SOT-23
400
300
200
100
0
0
25
50
75
100
TEMPERATURE ( o C)
© 2010 Fairchild Semiconductor Corporation
J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
125
150
www.fairchildsemi.com
5
J309 / J310 / MMBFJ309 / MMBFJ310 — N-Channel RF Amplifier
Typical Performance Characteristics (continued)
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I50
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