LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 REVISION HISTORY Revision Rev. 1.0 Rev. 2.0 Rev. 2.1 Rev. 2.2 Rev. 2.3 Issue Date Apr.19.2006 May.11.2006 Jul.5.2006 Dec.20.2006 Mar.3.2008 Rev. 2.5 Description Initial Issue Revised ISB(max) : 0.5mA => 1.25mA Adding 44-pin TSOP-II Adding 48-ball BGA Revised IDR Deleted L Spec. Added SL Spec. Revised Test Condition of ICC/ISB1/IDR Revised VTERM to VT1 and VT2 Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Deleted TSOLDER in ABSOLUTE MAXIMUN RATINGS Revised PACKAGE OUTLINE DIMENSION in page 13 Rev. 2.6 Revised Aug.30.2010 Rev. 2.7 ORDERING INFORMATION in page 14 Corrected ORDERING INFORMATION Typo. Rev. 2.8 Deleted WRITE CYCLE Notes : Rev. 2.4 Mar.30.2009 May.6.2010 May.20.2016 Jun.29.2016 1.WE#, CE# must be high or CE2 must be low during all address transitions Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 in page 9 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 FEATURES GENERAL DESCRIPTION Fast access time : 45/55/70ns Low power consumption: Operating current : 40/30/20mA (TYP.) Standby current : 2A (TYP.) LL-version 1A (TYP.) SL-version Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation Tri-state output Data byte control : LB# (DQ0 ~ DQ7) UB# (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) Green package available Package : 44-pin 400 mil TSOP II 48-pin 12mm x 20mm TSOP I 48-ball 6mm x 8mm TFBGA The LY62L25716 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The LY62L25716 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The LY62L25716 operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible PRODUCT FAMILY Product Family LY62L25716 LY62L25716(E) LY62L25716(I) Operating Temperature 0 ~ 70℃ -20 ~ 80℃ -40 ~ 85℃ Vcc Range Speed 2.7 ~ 3.6V 2.7 ~ 3.6V 2.7 ~ 3.6V 45/55/70ns 45/55/70ns 45/55/70ns Power Dissipation Standby(ISB1,TYP.) Operating(Icc,TYP.) 2µA(LL)/1µA(SL) 40/30/20mA 2µA(LL)/1µA(SL) 40/30/20mA 2µA(LL)/1µA(SL) 40/30/20mA Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc Vss A0-A17 DQ0-DQ7 Lower Byte DQ8-DQ15 Upper Byte CE# CE2 WE# OE# LB# UB# SYMBOL DESCRIPTION A0 - A17 Address Inputs DQ0 – DQ15 Data Inputs/Outputs DECODER I/O DATA CIRCUIT 256Kx16 MEMORY ARRAY CE#, CE2 Chip Enable Input WE# Write Enable Input OE# Output Enable Input LB# Lower Byte Control UB# Upper Byte Control VCC Power Supply VSS Ground COLUMN I/O CONTROL CIRCUIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 2 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 PIN CONFIGURATION 1 44 A5 A3 2 43 A6 A2 3 42 A7 A1 4 41 OE# A0 5 40 UB# CE# 6 39 LB# DQ0 7 38 DQ15 DQ1 8 37 DQ14 DQ2 9 36 DQ13 DQ3 10 35 DQ12 Vcc 11 34 Vss Vss 12 33 Vcc DQ4 13 32 DQ11 DQ5 14 31 DQ10 DQ6 15 30 DQ9 DQ7 16 29 DQ8 WE# 17 28 CE2 A17 18 27 A8 A16 19 26 A9 A15 20 25 A10 A14 21 24 A11 A13 22 23 A12 LY62L25716 XXXXXXXX XXXXXXXX A4 TSOP II A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# CE2 NC UB# LB# NC A17 A7 A6 A5 A4 A3 A2 A1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 LY62L25716 XXXXXXXX XXXXXXXX A16 NC Vss DQ15 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 Vcc DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# Vss CE# A0 TSOP I Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 3 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 A LB# OE# A0 A1 B DQ8 UB# A3 A4 CE# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D Vss DQ11 A17 A7 DQ3 Vcc E Vcc DQ12 NC A16 DQ4 Vss F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 NC A12 A13 WE# DQ7 A9 A10 NC A8 A11 CE2 LY62L25716 XXXXXXXX XXXXXXXX H A2 NC TFBGA(Top View) 1 2 3 4 5 6 TFBGA(See through with Top View) ABSOLUTE MAXIMUN RATINGS* PARAMETER Voltage on VCC relative to VSS Voltage on any other pin relative to VSS SYMBOL VT1 VT2 Operating Temperature TA Storage Temperature Power Dissipation DC Output Current TSTG PD IOUT RATING -0.5 to 4.6 -0.5 to VCC+0.5 0 to 70(C grade) -20 to 80(E grade) -40 to 85(I grade) -65 to 150 1 50 UNIT V V ℃ ℃ W mA *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Output Disable Read Write Note: CE# CE2 OE# WE# LB# UB# H X X L L L L L L L L X L X H H H H H H H H X X X H H L L L X X X X X X H H H H H L L L X X H L X L H L L H L X X H X L H L L H L L I/O OPERATION SUPPLY CURRENT DQ0-DQ7 DQ8-DQ15 High – Z High – Z High – Z High – Z ISB,ISB1 High – Z High – Z High – Z High – Z ICC,ICC1 High – Z High – Z DOUT High – Z ICC,ICC1 High – Z DOUT DOUT DOUT DIN High – Z High – Z DIN ICC,ICC1 DIN DIN H = VIH, L = VIL, X = Don't care. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 4 LY62L25716 Rev. 2.8 256K X 16 BIT LOW POWER CMOS SRAM DC ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITION PARAMETER Supply Voltage VCC *1 Input High Voltage VIH *2 Input Low Voltage VIL Input Leakage Current ILI VCC ≧ VIN ≧ VSS Output Leakage VCC ≧ VOUT ≧ VSS, ILO Current Output Disabled Output High Voltage VOH IOH = -1mA Output Low Voltage VOL IOL = 2mA Cycle time = Min. - 45 CE# = VIL and CE2 = VIH, ICC - 55 II/O = 0mA - 70 Other pins at VIL or VIH Average Operating Power supply Current Cycle time = 1µ s CE#≦0.2V and CE2≧VCC-0.2V,, ICC1 II/O = 0mA Other pins at 0.2V or VCC-0.2V CE# = VIH or CE2 = VIL, ISB other pins at VIL or VIH LL LLE/LLI CE# ≧VCC-0.2V Standby Power *5 SL 25℃ Supply Current or CE2≦0.2V *5 SLE ISB1 Others at 0.2V or *5 40℃ SLI VCC - 0.2V SL SLE/SLI MIN. 2.7 2.2 - 0.2 -1 *4 MAX. 3.6 VCC+0.3 0.6 1 UNIT V V V µA -1 - 1 µA 2.2 - 2.7 40 0.4 50 V V mA - 30 40 mA - 20 30 mA - 4 5 mA - 0.3 1.25 mA - 2 2 15 20 µA µA - 1 3 µA - 1 3 µA - 1 1 10 12 µA µA Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. 2. VIL(min) = VSS - 3.0V for pulse width less than 10ns. 3. Over/Undershoot specifications are characterized, not 100% tested. 4. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(TYP.) and TA = 25℃ 5. This parameter is measured at VCC = 3.0V Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 5 TYP. 3.0 - LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 CAPACITANCE (TA = 25℃, f = 1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. - MAX 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.2V to VCC - 0.2V 3ns 1.5V CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA AC ELECTRICAL CHARACTERISTICS (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low-Z Output Enable to Output in Low-Z Chip Disable to Output in High-Z Output Disable to Output in High-Z Output Hold from Address Change LB#, UB# Access Time LB#, UB# to High-Z Output LB#, UB# to Low-Z Output (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High-Z LB#, UB# Valid to End of Write SYM. tRC tAA tACE tOE tCLZ* tOLZ* tCHZ* tOHZ* tOH tBA tBHZ* tBLZ* SYM. tWC tAW tCW tAS tWP tWR tDW tDH tOW * tWHZ* tBW LY62L25716-45 LY62L25716-55 LY62L25716-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. 45 55 70 ns 45 55 70 ns 45 55 70 ns 25 30 35 ns 10 10 10 ns 5 5 5 ns 15 20 25 ns 15 20 25 ns 10 10 10 ns 45 55 70 ns 20 25 30 ns 10 10 10 ns LY62L25716-45 LY62L25716-55 LY62L25716-70 MIN. MAX. MIN. MAX. MIN. MAX. 45 55 70 40 50 60 40 50 60 0 0 0 35 45 55 0 0 0 20 25 30 0 0 0 5 5 5 15 20 25 35 45 60 - *These parameters are guaranteed by device characterization, but not production tested. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 6 UNIT ns ns ns ns ns ns ns ns ns ns ns LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2) tRC Address tAA Dout tOH Previous Data Valid Data Valid READ CYCLE 2 (CE# and CE2 and OE# Controlled) (1,3,4,5) tRC Address tAA CE# tACE CE2 LB#,UB# tBA OE# tOE tOH tOHZ tBHZ tCHZ tOLZ tBLZ tCLZ Dout High-Z Data Valid High-Z Notes : 1.WE#is high for read cycle. 2.Device is continuously selected OE# = low, CE# = low, CE2 = high, LB# or UB# = low. 3.Address must be valid prior to or coincident with CE# = low, CE2 = high, LB# or UB# = low transition; otherwise tAA is the limiting parameter. 4.tCLZ, tBLZ, tOLZ, tCHZ, tBHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. 5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tBHZ is less than tBLZ, tOHZ is less than tOLZ. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 7 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 WRITE CYCLE 1 (WE# Controlled) (1,2,4,5) tWC Address tAW CE# tCW CE2 tBW LB#,UB# tAS tWP tWR WE# tWHZ Dout tOW High-Z (4) tDW Din (4) tDH Data Valid WRITE CYCLE 2 (CE# and CE2 Controlled) (1,4,5) tWC Address tAW CE# tAS tWR tCW CE2 tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 8 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 WRITE CYCLE 3 (LB#,UB# Controlled) (1,4,5) tWC Address tAW tWR CE# tAS tCW CE2 tBW LB#,UB# tWP WE# tWHZ Dout High-Z (4) tDW Din tDH Data Valid Notes : 1.A write occurs during the overlap of a low CE#, high CE2, low WE#, LB# or UB# = low. 2.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be placed on the bus. 3.During this period, I/O pins are in the output state, and input signals must not be applied. 4.If the CE#, LB#, UB# low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state. 5.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 9 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 DATA RETENTION CHARACTERISTICS PARAMETER VCC for Data Retention Data Retention Current Chip Disable to Data Retention Time Recovery Time SYMBOL TEST CONDITION MIN. VDR CE# ≧ VCC - 0.2V or CE2 ≦ 0.2V 1.5 LL LLE/LLI VCC = 1.5V SL 25℃ CE# ≧ VCC - 0.2V IDR SLE or CE2 ≦ 0.2V 40℃ Other pins at 0.2V or VCC-0.2V SLI SL SLE/SLI See Data Retention tCDR 0 Waveforms (below) tR tRC* tRC* = Read Cycle Time DATA RETENTION WAVEFORM Low Vcc Data Retention Waveform (1) (CE# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE# VIH tR CE# ≧ Vcc-0.2V VIH Low Vcc Data Retention Waveform (2) (CE2 controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR CE2 tR CE2 ≦ 0.2V VIL VIL Low Vcc Data Retention Waveform (3) (LB#, UB# controlled) VDR ≧ 1.5V Vcc Vcc(min.) Vcc(min.) tCDR LB#,UB# VIH tR LB#,UB# ≧ Vcc-0.2V VIH Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 10 TYP. 1.0 1.0 MAX. 3.6 12 16 UNIT V µA µA 0.5 2.5 µA 0.5 2.5 0.5 0.5 8 10 µA µA µA - - ns - - ns LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 PACKAGE OUTLINE DIMENSION 44-pin 400mil TSOP Ⅱ Package Outline Dimension SYMBOLS A A1 A2 b c D E E1 e L ZD y Θ DIMENSIONS IN MILLMETERS MIN. NOM. MAX. 1.20 0.05 0.10 0.15 0.95 1.00 1.05 0.30 0.45 0.12 0.21 18.212 18.415 18.618 11.506 11.760 12.014 9.957 10.160 10.363 0.800 0.40 0.50 0.60 0.805 0.076 o o o 0 3 6 DIMENSIONS IN MILS MIN. NOM. MAX. 47.2 2.0 3.9 5.9 37.4 39.4 41.3 11.8 17.7 4.7 8.3 717 725 733 453 463 473 392 400 408 31.5 15.7 19.7 23.6 31.7 3 o o o 0 3 6 Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 11 LY62L25716 Rev. 2.8 256K X 16 BIT LOW POWER CMOS SRAM 48-pin 12mm x 20mm TSOP I Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 12 LY62L25716 Rev. 2.8 256K X 16 BIT LOW POWER CMOS SRAM 48-ball 6mm × 8mm TFBGA Package Outline Dimension Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 13 LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 ORDERING INFORMATION Package Type Access Time Power Type (Speed)(ns) 44Pin(400mil) TSOP II 45 Special Ultra Low Power Temperature Packing Range(℃) Type 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Tray LY62L25716ML-45SL Tape Reel LY62L25716ML-45SLT Tray LY62L25716ML-45SLE Tape Reel LY62L25716ML-45SLET Tray LY62L25716ML-45SLI Tape Reel LY62L25716ML-45SLIT Tray LY62L25716ML-45LL Tape Reel LY62L25716ML-45LLT Tray LY62L25716ML-45LLE Tape Reel LY62L25716ML-45LLET Tray LY62L25716ML-45LLI Tape Reel LY62L25716ML-45LLIT Tray LY62L25716ML-55SL Tape Reel LY62L25716ML-55SLT Tray LY62L25716ML-55SLE Tape Reel LY62L25716ML-55SLET Tray LY62L25716ML-55SLI Tape Reel LY62L25716ML-55SLIT Tray LY62L25716ML-55LL Tape Reel LY62L25716ML-55LLT Tray LY62L25716ML-55LLE Tape Reel LY62L25716ML-55LLET Tray LY62L25716ML-55LLI Tape Reel LY62L25716ML-55LLIT Tray LY62L25716ML-70SL Tape Reel LY62L25716ML-70SLT Tray LY62L25716ML-70SLE Tape Reel LY62L25716ML-70SLET Tray LY62L25716ML-70SLI Tape Reel LY62L25716ML-70SLIT Tray LY62L25716ML-70LL Tape Reel LY62L25716ML-70LLT Tray LY62L25716ML-70LLE Tape Reel LY62L25716ML-70LLET Tray LY62L25716ML-70LLI Tape Reel LY62L25716ML-70LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 14 Lyontek Item No. LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 ORDERING INFORMATION Package Type Access Time Power Type (Speed)(ns) 48-Pin 45 12mmx20mm TSOP I Special Ultra Low Power Temperature Packing Range(℃) Type 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Tray LY62L25716LL-45SL Tape Reel LY62L25716LL-45SLT Tray LY62L25716LL-45SLE Tape Reel LY62L25716LL-45SLET Tray LY62L25716LL-45SLI Tape Reel LY62L25716LL-45SLIT Tray LY62L25716LL-45LL Tape Reel LY62L25716LL-45LLT Tray LY62L25716LL-45LLE Tape Reel LY62L25716LL-45LLET Tray LY62L25716LL-45LLI Tape Reel LY62L25716LL-45LLIT Tray LY62L25716LL-55SL Tape Reel LY62L25716LL-55SLT Tray LY62L25716LL-55SLE Tape Reel LY62L25716LL-55SLET Tray LY62L25716LL-55SLI Tape Reel LY62L25716LL-55SLIT Tray LY62L25716LL-55LL Tape Reel LY62L25716LL-55LLT Tray LY62L25716LL-55LLE Tape Reel LY62L25716LL-55LLET Tray LY62L25716LL-55LLI Tape Reel LY62L25716LL-55LLIT Tray LY62L25716LL-70SL Tape Reel LY62L25716LL-70SLT Tray LY62L25716LL-70SLE Tape Reel LY62L25716LL-70SLET Tray LY62L25716LL-70SLI Tape Reel LY62L25716LL-70SLIT Tray LY62L25716LL-70LL Tape Reel LY62L25716LL-70LLT Tray LY62L25716LL-70LLE Tape Reel LY62L25716LL-70LLET Tray LY62L25716LL-70LLI Tape Reel LY62L25716LL-70LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 15 Lyontek Item No. LY62L25716 256K X 16 BIT LOW POWER CMOS SRAM Rev. 2.8 ORDERING INFORMATION Package Type Access Time Power Type (Speed)(ns) 48-ball (6mmx8mm) TFBGA 45 Special Ultra Low Power Temperature Packing Range(℃) Type 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 55 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ 70 Special Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Ultra Low Power 0℃~70℃ -20℃~80℃ -40℃~85℃ Tray LY62L25716GL-45SL Tape Reel LY62L25716GL-45SLT Tray LY62L25716GL-45SLE Tape Reel LY62L25716GL-45SLET Tray LY62L25716GL-45SLI Tape Reel LY62L25716GL-45SLIT Tray LY62L25716GL-45LL Tape Reel LY62L25716GL-45LLT Tray LY62L25716GL-45LLE Tape Reel LY62L25716GL-45LLET Tray LY62L25716GL-45LLI Tape Reel LY62L25716GL-45LLIT Tray LY62L25716GL-55SL Tape Reel LY62L25716GL-55SLT Tray LY62L25716GL-55SLE Tape Reel LY62L25716GL-55SLET Tray LY62L25716GL-55SLI Tape Reel LY62L25716GL-55SLIT Tray LY62L25716GL-55LL Tape Reel LY62L25716GL-55LLT Tray LY62L25716GL-55LLE Tape Reel LY62L25716GL-55LLET Tray LY62L25716GL-55LLI Tape Reel LY62L25716GL-55LLIT Tray LY62L25716GL-70SL Tape Reel LY62L25716GL-70SLT Tray LY62L25716GL-70SLE Tape Reel LY62L25716GL-70SLET Tray LY62L25716GL-70SLI Tape Reel LY62L25716GL-70SLIT Tray LY62L25716GL-70LL Tape Reel LY62L25716GL-70LLT Tray LY62L25716GL-70LLE Tape Reel LY62L25716GL-70LLET Tray LY62L25716GL-70LLI Tape Reel LY62L25716GL-70LLIT Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 16 Lyontek Item No. LY62L25716 Rev. 2.8 256K X 16 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. Lyontek Inc. reserves the rights to change the specifications and products without notice. 2F, No17, Industry E. Rd. II, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 17