^£.mL-(lonauctoi ^Product*., One,
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
SWITCHMODE SERIES
NPN SILICON POWER DARLINGTON TRANSISTORS
WITH BASE-EMITTER SPEEDUP DIODE
The MJ10004 and MJ10006 darlington transistors are designed
for high-voltage, high-speed, power switching in inductive circuits
where fall time is critical. They are particularly suited for line oper
-ated switch-mode applications such as:
FEATURES:
'Continuous Collector Current - lc = 20 A
"Switching Regulators
•Inverters
•Solenoid and Relay Drivers
•Motor Controls
NPN
MJ10004
MJ10005
20 AMPERE
POWER DARLINGTON
TRANSISTORS
350-400 VOLTS
175 WATTS
MAXIMUM RATINGS
Characteristic
Symbol
MJ10004
MJ10005
Unit
VCEV
450
500
V
400
450
V
350
400
V
Collector-Emitter Voltage
Collector-Emitter Voltage
VCEX(SUS)
Collector-Emitter Voltage
VCEO(SUS)
VEBO
8.0
V
Collector Current-Continuous
-Peak
lc
'CM
20
30
A
Base current
'B
2.5
A
PD
175
100
1.0
W
W
W/°C
Emitter-Base Voltage
Total Power Dissipation eTc=25°C
6TC= 100°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Tj '"'"sTO
TO-3
B~
c]~
I
OL-
H
°c
- 65 to +200
J -\
THERMAL CHARACTERISTICS
/±x
j*
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Case
Rejc
1.0
°c/w
i
> I
<J*3.
A
PIN 1.BASE
2.EMITTER
COLUECTOR(CASE)
FIGURE -1 POWER DERATING
MILLIMETERS
200
| 175
| 15°
| 125
\
X^
\
i 10°
\
Q 75
| 50
°O 25
a
\
0
25
50
75
A
B
C
D
E
F
G
H
I
100 J125
K
MIN
MAX.
38.75
39.96
22.23
19.28
7.96
11.18
9.28
1219
2520
26.67
0.92
1.38
1.09
1.62
29.90
30.40
16.64
17.30
150
200
3.88 175 4.36
10.67
11.18
TC,TEMPER*TURE(«C)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
MJ10004, MJ10005, NPN
ELECTRICAL CHARACTERISTICS ( Tc = 25'C unless otherwise noted )
Characteristic
Symbol
Min
VCEO(8US)
350
400
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Sustaining Voltage
( lc = 250mA, IB = 0, Velmip=Rate VCEO )
MJ10004
MJ10005
Collector Cutoff Current
( VCE= Rated VCEV,RBE=50 ohm,Tc=100°C)
ICER
Collector Cutoff Current
( VCEV= Rated Value,VM<OFF)=1 .5 V )
( VCEV= Rated Value, VB^oppfl .5 V, TC=100°C)
ICEV
Emitter Cutoff Current
(VEB = 2.0V,I C = 0)
'EBO
V
mA
5.0
0.25
5.0
mA
mA
175
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0A,V CE = 5.0V)
(IC = 10A, VCE = 5.0V)
hFE
50
40
Collector - Emitter Saturation Voltage
( lc = 10 A , IB = 400mA }
( lc = 20 A, IB - 2.0 A )
( lc = 10 A, IB = 400 mA,Tc=100°C )
Base - Emitter Saturation Voltage
(I C =10A, IB= 400mA)
( lc = 10 A IB =400 mA, TC=100°C )
Diode Forward Voltage
(IF = 10A)
600
400
V
VMM
1.9
3.0
2.0
V
VBE{sat)
2.5
2.5
V
V*
5.0
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain(2)
( lc = 1 .0 A, VCE = 10 V, f = 1 .0 MHz )
Output Capacitance
(VCB=10 V, IE=0, f =100 kHz )
h.
Cob
10
pp
100
SWITCHING CHARACTERISTICS
Delay Time
VCC = 250V, l c a 1 0 A
*d
0.2
us
Rise Time
IB1 = 400 mA,VBE(off)=5.0V
'r
0.6
us
tp = 50 us.Duty Cycle ^ 2%
*.
1.5
us
tf
0.5
us
Storage Time
Fall Time
(1) Pulse Test: Pulse width * 300 us , Duty Cycle ^ 2.0%
(2)f T = |hf.| - f ^