Transistors SMD Type NPN Transistors MMBTA06 (KMBTA06) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 0.4 3 ● Complementary to MMBTA56 1 0.55 ● For Switching and Amplifier Applications +0.1 1.3 -0.1 +0.1 2.4 -0.1 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 80 Collector - Emitter Voltage VCEO 80 Emitter - Base Voltage Unit V VEBO 4 Collector Current - Continuous IC 500 mA Collector Power Dissipation PC 300 mW RΘJA 416 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 80 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 80 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 4 Typ Max V Collector-base cut-off current ICBO VCB= 80 V , IE= 0 100 Collector- emitter cut-off current ICES VCE= 60 V , IE= 0 100 Emitter cut-off current IEBO VEB= 3V , IC=0 100 Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB=10mA 0.25 Base - emitter saturation voltage VBE(sat) IC=100 mA, IB=10mA 1.2 DC current gain Transition frequency hFE(1) VCE= 1V, IC= 10mA 100 hFE(2) VCE= 1V, IC= 100mA 100 VCE= 2V, IC= 10mA,f=100MHz 100 fT Unit nA V 400 MHz ■ Marking Marking 1G* www.kexin.com.cn 1 Transistors SMD Type NPN Transistors MMBTA06 (KMBTA06) ■ Typical Characterisitics Static Characteristic COLLECTOR CURRENT IC (mA) 80 500uA 450uA 70 VCE=1V o Ta=100 C 400uA 60 hFE —— IC 500 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE 90 350uA 50 300uA 40 250uA 200uA 30 150uA 20 o Ta=25 C 100 100uA 10 0 IB=50uA 0 1 2 3 4 5 6 7 COLLECTOR-EMITTER VOLTAGE 8 VCE 9 20 10 1 VCEsat —— IC 1 10 100 COLLECTOR CURRENT (V) VBEsat —— 10 IC 500 (mA) IC β=10 0.1 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) β=10 Ta=100℃ Ta=25℃ 0.01 1 10 IC VBE —— 100 Ta=100℃ 0.1 500 100 COLLECTOR CURRENT Ta=25℃ 1 1 10 (mA) IC Cob / Cib 1000 500 100 COLLECTOR CURRENT —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 CAPACITANCE C (pF) IC (mA) o C T= a 25 ℃ o T= a 10 0 COLLECTOR CURRENT 10 1 0.1 0.0 100 VCE=1V 0.3 0.6 0.9 BASE-EMITTER VOLTAGE fT —— Cib Cob 10 1 0.1 1.2 1 10 REVERSE VOLTAGE VBE(V) IC Pc 0.4 COLLECTOR POWER DISSIPATION Pc (W) 300 TRANSITION FREQUENCY fT (MHz) Ta=25 C 100 —— V (V) Ta 0.3 0.2 0.1 VCE=2V o 10 Ta=25 C 3 COLLECTOR CURRENT 2 70 10 www.kexin.com.cn IC (mA) 0.0 0 25 50 75 100 AMBIENT TEMPERATURE 125 Ta (℃) 150