CEM7350 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D1 D1 D2 D2 8 7 6 5 Surface mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS 1 2 3 4 S1 G1 S2 G2 TA = 25 C unless otherwise noted Symbol N-Channel P-Channel Drain-Source Voltage VDS 100 -100 Units V Gate-Source Voltage VGS ±20 ±20 V ID 2.6 -2.0 A IDM 10 -8.0 A Parameter Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation PD 2.0 W TJ,Tstg -55 to 150 C Symbol Limit Units RθJA 62.5 C/W Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b 2005.August http://www.cetsemi.com 1 CEM7350 N-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 100V, VGS = 0V 1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 190 mΩ Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 2.1A 2 150 Dynamic Characteristics d Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 316 pF 93 pF 37 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 50V, ID = 1A, VGS = 10V, RGEN = 22Ω 12 25 ns 10 20 ns 30 55 ns Turn-Off Fall Time tf 18 35 ns Total Gate Charge Qg 12.4 16 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 80V, ID = 2.1A, VGS = 10V 2.0 nC 5.4 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = 1.8A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 2 1.8 A 1.3 V 5 CEM7350 P-Channel Electrical Characteristics Parameter TA = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -100 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -100V, VGS = 0V -1 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA -4 V 320 mΩ Off Characteristics V On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) VGS = VDS, ID = -250µA RDS(on) VGS = -10V, ID = -1.5A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -25V, VGS = 0V, f = 1.0 MHz -2 250 576 pF 120 pF 32 pF Switching Characteristics d Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -50V, ID = -1A, VGS = -10V, RGEN = 22Ω 14 30 ns 8 20 ns ns 60 120 Turn-Off Fall Time tf 20 40 ns Total Gate Charge Qg 16 21 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -80V, ID = -1.5A, VGS = -10V 3.5 nC 5.0 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b IS Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.4A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 3 -1.4 A -1.6 V CEM7350 N-CHANNEL 10 5 8 ID, Drain Current (A) ID, Drain Current (A) VGS=10,6,5,4.5V VGS=4.0V 6 4 VGS=3.5V 2 4 5 3 2 25 C 1 TJ=125 C 0 0 0 2 4 6 8 0 10 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 4 5 Figure 2. Transfer Characteristics Ciss 300 200 Coss 100 Crss 0 0 5 10 15 20 25 2.2 1.9 ID=2.1A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 3 Figure 1. Output Characteristics 400 ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 2 VGS, Gate-to-Source Voltage (V) 500 1.2 1 VDS, Drain-to-Source Voltage (V) 600 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 4 CEM7350 P-CHANNEL 12 5 25 C 10 -ID, Drain Current (A) -ID, Drain Current (A) VGS=10,9,8,7V 8 VGS=6V 6 4 VGS=5V 2 4 3 2 1 TJ=125 C VGS=4V 0 0 0 1 2 3 4 5 6 0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 450 300 Coss 150 Crss 0 5 10 15 20 25 30 5 2.2 1.9 ID=-1.5A VGS=-10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 9. Capacitance Figure 10. On-Resistance Variation with Temperature VDS=VGS -IS, Source-drain current (A) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 8. Transfer Characteristics Ciss ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 3 Figure 7. Output Characteristics 600 1.2 2 -VGS, Gate-to-Source Voltage (V) 750 0 1 -VDS, Drain-to-Source Voltage (V) 900 1.3 -55 C VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 1 0 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 11. Gate Threshold Variation with Temperature Figure 12. Body Diode Forward Voltage Variation with Source Current 5 CEM7350 10 10 VDS=80V ID=2.1A 8 6 4 2 0 0 3 2 RDS(ON)Limit ID, Drain Current (A) VGS, Gate to Source Voltage (V) N-CHANNEL 6 9 12 10 10 1ms 10ms 1s 10 -1 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 1 10 2 Figure 13. Gate Charge Figure 14. Maximum Safe Operating Area 10 8 6 4 2 0 5 10 3 2 RDS(ON)Limit -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) 0 VDS, Drain-Source Voltage (V) VDS=-80V ID=-1.5A 0 10 Qg, Total Gate Charge (nC) P-CHANNEL 10 5 100ms 0 DC 10 15 1 10 15 10 10 1ms 10ms 100ms 0 1s DC 10 10 20 1 -1 -2 TA=25 C TJ=150 C Single Pulse 10 -1 10 0 10 1 10 2 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 15. Gate Charge Figure 16. Maximum Safe Operating Area 6 10 3 CEM7350 VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 18. Switching Waveforms Figure 17. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 0.2 10 -1 0.1 0.05 10 PDM 0.02 0.01 -2 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 19. Normalized Thermal Transient Impedance Curve 7 10 1 10 2