BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDV65, BDV65A, BDV65B and BDV65C ● 125 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) E T E L O S B O BDV64B V CBO -120 BDV64 -60 BDV64B VCEO BDV64C Emitter-base voltage Continuous collector current -80 -100 BDV64C BDV64A UNIT -60 BDV64 BDV64A VALUE -80 -100 V V -120 VEBO -5 V IC -12 A ICM -15 A IB -0.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 125 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W °C Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10% 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BDV64 V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC Collector-emitter MAX BDV64A -80 BDV64B -100 BDV64C -120 IC = -30 mA IB = 0 VCB = -30 V IB = 0 BDV64 -2 Collector-emitter VCB = -40 V IB = 0 BDV64A -2 cut-off current VCB = -50 V IB = 0 BDV64B -2 breakdown voltage (see Note 4) TYP V mA VCB = -60 V IB = 0 BDV64C VCB = -60 V IE = 0 BDV64 -0.4 VCB = -80 V IE = 0 BDV64A -0.4 VCB = -100 V IE = 0 BDV64B -0.4 Collector cut-off VCB = -120 V IE = 0 BDV64C -0.4 current VCB = -30 V IE = 0 TC = 150°C BDV64 -2 VCB = -40 V IE = 0 TC = 150°C BDV64A -2 VCB = -50 V IE = 0 TC = 150°C BDV64B -2 VCB = -60 V IE = 0 TC = 150°C BDV64C -2 VEB = -5 V IC = 0 VCE = -4 V IC = -5 A (see Notes 4 and 5) -20 mA IC = -5 A -4 V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage -2 VCE = IE = -10 A mA -5 mA (see Notes 4 and 5) -2 V IC = -5 A (see Notes 4 and 5) -2.5 V IB = 0 (see Notes 4 and 5) -3.5 V E T E L O S B O IB = UNIT -60 1000 NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC Junction to case thermal resistance RθJA Junction to free air thermal resistance MIN 2 TYP MAX UNIT 1 °C/W 35.7 °C/W JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS145AD 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 1000 tp = 300 µs, duty cycle < 2% IB = IC / 100 -1·5 -1·0 -0·5 E T E L O S B O VCE = -4 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS145AE -2·0 -1·0 -10 -20 0 -0·5 -1·0 IC - Collector Current - A TC = -40°C TC = 25°C TC = 100°C -10 -20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS145AF VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 TC = -40°C TC = 25°C -2·5 TC = 100°C -2·0 -1·0 -1·5 -0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0 -0·5 -1·0 -10 -20 IC - Collector Current - A Figure 3. JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDV64, BDV64A, BDV64B, BDV64C PNP SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 E T E L O S B O 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 JUNE 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.