DONGGUAN NANJING ELECTRONICS LTD., 6273ODVWLF(QFDSVXODWH7UDQVLVWRUV %& %& %& TRANSISTOR (NPN) 627 1. BASE 2. EMITTER )($785(6 z Ideally suited for automatic insertion z For switching and AF amplifier applications 3. COLLECTOR 0$;,0805$7,1*6 7D ЯXQOHVVRWKHUZLVHQRWHG 6\PERO 9&%2 3DUDPHWHU 9DOXH Collector-Base Voltage V BC846 BC847 BC848 9&(2 8QLW 80 50 30 Collector-Emitter Voltage V BC846 BC847 BC848 65 45 30 9(%2 Emitter-Base Voltage 6 V ,& Collector Current –Continuous 0.1 A 3& Collector Power Dissipation 200 mW 150 Я 7- Junction Temperature 7VWJ Storage Temperature '(9,&(0$5.,1* %&$ $%&% % %&$ (%&% )%&& * %&$ -%&% .%&& / -55~+150 Я &$XJ (/(&75,&$/&+$5$&7(5,67,&6 7D Я XQOHVVRWKHUZLVHVSHFLILHG 6\PERO 3DUDPHWHU 7 HVW FRQGLWLRQV &ROOHFWRUEDVHEUHDNGRZQYROWDJH %& %& 0LQ VCBO IC= 10μA, IE=0 %& 30 65 VCEO IC= 10mA, IB=0 %& (PLWWHUEDVHEUHDNGRZQYROWDJH VEBO IE= 10μA, IC=0 ICBO VCB=50 V , IE=0 VCE=45 V , IB=0 IEBO VEB=5 V , IC=0 hFE VCE= 5V, IC= 2mA %&&%&& &ROOHFWRUHPLWWHUVDWXUDWLRQYROWDJH VCE(sat) %DVHHPLWWHUVDWXUDWLRQYROWDJH VBE(sat) &ROOHFWRURXWSXWFDSDFLWDQFH 0.1 ȝA 0.1 ȝA 0.1 ȝA VCE=30 V , IB=0 '&FXUUHQWJDLQ %&$$$ 7UDQVLWLRQIUHTXHQF\ V VCE=60 V , IB=0 ICEO %& %&%%% 6 VCB=30 V , IE=0 &ROOHFWRUFXWRIIFXUUHQW %& (PLWWHUFXWRIIFXUUHQW V VCB=70 V , IE=0 %& %& 45 30 &ROOHFWRUFXWRIIFXUUHQW %& %& V 50 &ROOHFWRUHPLWWHUEUHDNGRZQYROWDJH %& %& 7\S 0D[8QLW 80 fT Cob 110 220 200 450 420 800 IC=100mA, IB= 5mA 0.5 V IC=100mA, IB= 5mA 1.1 V VCE= 5 V, IC= 10mA f=100MHz VCB=10V,f=1MHz 100 MHz 4.5 pF &$XJ Typical Characteristics BC847 Static Characteristic 10 (mA) hFE 3000 COMMON EMITTER Ta=25ć —— IC COMMON EMITTER VCE= 5V 1000 8 Ta=100ć hFE 20uA COLLECTOR CURRENT DC CURRENT GAIN IC 18uA 16uA 6 14uA 12uA 4 10uA 8uA Ta=25ć 100 6uA 2 4uA IB=2uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1000 6 7 1 VCEsat IC 100 —— IC (mA) IC 500 ȕ=20 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) ȕ=20 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 10 COLLECTOR CURRENT VCE (V) 800 Ta=25ć 600 Ta=100 ć 400 200 0.1 1 10 COLLECTOR CURREMT IC 100 —— IC Ta=100 ć 100 Ta=25ć 10 0.1 100 1 10 COLLECTOR CURREMT (mA) VBE fT 500 100 (mA) IC T =2 5ć a TRANSITION FREQUENCY 10 T =1 00ć a COLLECTOR CURRENT IC fT (mA) (MHz) COMMON EMITTER VCE=5V —— IC 1 100 COMMON EMITTER VCE=5V Ta=25ć 0.1 0.2 0.4 0.6 0.8 10 0.25 1.0 2 100 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib 10 C (pF) Ta=25 ć CAPACITANCE 6 PC 250 f=1MHz IE=0/IC=0 Cob 1 0.1 0.1 4 8 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) —— IC 10 12 125 150 (mA) Ta 200 150 100 50 0 1 REVERSE VOLTAGE 10 V (V) 30 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (ć ) &$XJ