GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 1 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 2 GaN RF Power Products Next generation high power RF semiconductor technology MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW, ISM, and communications customers. As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting. MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz. MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon technology to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors— including 2 W to 600 W P1db CW power transistors in ceramic and overmolded plastic DFN and TO-272 packages, as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers improve upon the high power and efficiency performance of LDMOS while at the at the same time providing the high frequency performance of GaAs. Only MACOM delivers GaN performance at silicon cost structures to drive adoption. Why choose GaN? GaN advantages include: > > > > High breakdown voltage > Multi-octave bandwidth Superior power density > High frequency operation High RF gain and efficiency > Excellent thermal conductivity GaN performance at silicon cost structures For over 45 years, MACOM engineers have been redefining RF power and are now applying their GaN expertise to an array of commercial, industrial, scientific, medical and wireless applications. Turn to MACOM for superior performance, high power GaN solutions. LDMOS MACOM GaN on Silicon Benefits – >10% Improvement Lower Operating Costs, Simpler Cooling Power Density 1-1.5 W/mm 4-6 W/mm Smaller Footprint and Lower Costs Easy Matching difficult easy Time-to-Market and Smaller Footprint 8" 6" and 8" Capacity and Surge Capability Silicon Silicon Competitive Bill of Materials DPD friendly DPD friendly Competitive Bill of Materials Limited to 2.45 GHz Can be used at >2.45 GHz Broader Choice for Your Applications Power Efficiency “>2GHz” Supply Chain Cost Linearity Support all ISM Brands 1 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 3 RF Energy MACOM GaN enables RF Energy applications with exceptional efficiency and gain Features and Benefits MACOM GaN delivers cost, bandwidth, power density, and efficiency advantages in an array of form factors: > Higher efficiency and reliability > Higher linearity > Increased precision and control > Excellent gain, low power, and lower cost structure > Power levels from 2–1000 W > Frequencies from 890 MHz to 2.45 GHz > Packages from QFN to TO-272 to ceramic Description Radio frequency (RF) energy applications use controlled electromagnetic radiation to heat items or to power all kinds of processes. Today, magnetron tubes commonly generate this energy. Tomorrow, it will be generated by an all solid-state semiconductor chain. Solid-state RF energy offers numerous benefits unavailable via alternate solutions: low-voltage drive, semiconductor-type reliability, smaller form factor, and an “all-solid-state electronics” footprint. Perhaps its most compelling attributes are fast frequency, phase- and power-agility complemented by hyper-precision. Collectively, the technology’s attributes yield an unprecedented process control range, even energy distribution, and fast adaption to changing load conditions. Ideal for applications including: automotive ignition, industrial cooking, industrial drying, medical ablation, plasma street lighting. Block Diagram RF Energy Cooking System In development I/Q MODULATOR MIXER I-DAC OSCILLATOR Q-DAC RF SYNTHESIS VGA In development HPA HPA COOKING CAVITY AMPLIFIER SWITCH High Power Amplifiers MAGe-100809-600* MAGe-100809-1K0* MAGe-100825-002* MAGe-100825-005* MAGe-100825-010* MAGe-102425-015* MAGe-102425-030* MAGe-102425-050* MAGe-102425-100* MAGe-102425-300* * In development VGA SWITCH COUPLER COUPLER In development I/Q MIXER MODULATOR RF SYNTHESIS AMPLIFIER I-DAC Q-DAC OSCILLATOR High Power Amplifiers MAGe-100809-600* MAGe-100809-1K0* MAGe-100825-002* MAGe-100825-005* MAGe-100825-010* MAGe-102425-015* MAGe-102425-030* MAGe-102425-050* MAGe-102425-100* MAGe-102425-300* * In development 2 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 4 Basestation MACOM GaN transforms the network with ease of use and cost effectiveness Features and Benefits > > > > > > > > > Optimized to meet the most demanding bandwidth, performance, and efficiency needs Multi-band system: single radio supporting > 100 MHz of bandwidth High frequency: enables 1.8 GHz to 6 GHz Compact and lightweight: higher power density with smaller package, higher efficiency with smaller heat sink Easy to linearize and correct with standard digital pre-distortion (DPD) systems CapEx savings: smaller PCBs, lower heat sink cost, single GaN device replaces multiple LDMOS devices OpEx Savings: high efficiency reduces utility bill Massive MIMO pre-5G sets new standard for integration with high efficiency and high power density Faster time to market: simpler devices lead to shorter development times, broadband means fewer PAs to deal with when covering all bands, excellent applications support Description MACOM's new MAGb series is the industry's first commercial basestation-optimized family of GaN transistors to achieve leadership efficiency, bandwidth and power gain with the linearity and cost structure like LDMOS, with a path to better than LDMOS cost. Leveraging MACOM's Gen4 GaN technology, this new series enables wireless carriers to deploy the latest LTE releases and significantly reduce operating expenses at highly competitive price points, with robust and scalable CMOS-like supply chain combined with MACOM’s best in class applications and design support team with decades of experience. Block Diagram Wireless Access TDD Low Noise Amplifier MAAL-010704 Low Noise Amplifier MAAL-011078 MAAL-011134 LNA DSA ADC LNA HIGH ISOLATION SWITCH SP2T, SP4T, SP5T HIGH POWER SWITCH (TDD ONLY) ADC BASE BAND ADC Rx ADC Tx DSA PREDRIVER DPD High Isolation Switch MAAL-011078 MAAL-011134 TDD CIRCULATOR ADC GaN ADC DRIVER GaN GaN Power Amplifiers Request information 3 POWER AMPLIFIERS Digital Attenuator MAATSS0015 MAATSS0017 MAAD-000523 Pre-Driver MAAM-009286 MAAM-009560 CPRI INTERFACE GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:29 AM Page 5 ISM, Communications & Instrumentation MACOM—the first choice for GaN in communications, multi-market and ISM applications Features and Benefits > Broadband, unmatched transistors can be used for a variety of applications including communications, instrumentation and industrial, scientific and medical (ISM) > Very rugged: allows GaN transistors to withstand high VSWR mismatches during power on/start up and during operation without damaging the transistor > High voltage: reduces bias current load on power supply allowing for reduced cost power supplies > Excellent thermal performance: allows reduced heat sink costs for easier PCB designs > High RF gain and efficiency > MTTF of 100 year+ (channel temperature < 200°C) > Non-magnetic parts available > EAR99 export classification Description As gallium nitride grows from its initial role in military and radar applications to expand into commercial markets, MACOM is uniquely positioned to enable those demanding applications. Leveraging our GaN experience and supply chain, MACOM satisfies many of the commercial requirements that have limited GaN penetration in broader markets. Packaging choices range from ceramic flanged and earless, to discrete plastic, including plastic laminate modules that enable traditional SMT PCB production techniques. The portfolio of 5-300 W devices allows customers a wide set of options to build line-ups for their ISM applications. Block Diagram MRI Driver Amplifiers MAAM-009116 XF1001-SC Receive Coil MA44781 MADP-011048 Transmit Receive Coil MA4P7446F-1091T MA4P7452F-1072T MA4P7461F-1072T MA4P7474F-1072T MA4P7470F-1072T MADP-000235-10720T MA4P1200NM-401T MA4P1250NM-1072T MA4P7435NM-1091T MA4P7441F-1091T MADP-000504-10720T MADP-011034-10720T Transmit Coil MA4PK2000 MA4PK2001 MA4PK2002 MA4PK2003 MA4PK3002 MA4PK2004 MA4PK3003 MA4PK3000 MA4PK3004 MA4PK3001 MA4P709-150 X, Y, Z X, Y, Z GRADIENT GRADIENT COILS COILS GRADIENT AMPLIFIER x3 GRADIENT TIMING AND CONTROL DAC Low Noise Amplifiers MAAL-009120 MAAL-010200 RE REC EIV E VE VE RECEIVE COILL COI AMP LNA AMP LNA TRANSMIT/ RECEIVE COIL TRA RA AN NSM SMITT TRANSMIT COILL COI PROCESSORS AND PL DISPLAY CONTROLS ADC T R ILTER FFILTER FILTER FILTER T R ADC FREQUENCY FRE R QUEN NCY SYNTHESIZER SYN NTHE THES SIZER R RF AMPLIFIER RF AMPLIFIER DAC DAC TIMING AND WAVEFORM GENERATION RF Amplifiers NPT2010 NPT2018 NPT2020 NPT2021 NPT2022 MRF137 MRF141 MRF148A MRF150 MRF151 MRF151G MRF154 MRF157 DU28120T DU28120V DU28200M DU2840S DU2860T DU2860U DU2880T DU2880U 4 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 6 MILCOM MACOM’s GaN solutions offer customers the flexibility in designing systems to fit their unique requirements Features and Benefits > > > > > > > > MACOM’s rich heritage in supporting MILCOM radios for the last 50-60 years is still going strong Extensive portfolio of RF Power Products enable the right system choices Proven track record of high quality and reliability Wideband products enable new multifunction system capability requiring complex waveforms and efficient, economical designs Small size, easy to match products enable fast time-to-market High gain and 50 V operation provide efficient operation and significantly reduce size of matching networks MACOM GaN is mature technology, inexpensive, leverages readily available Si process services, and delivers consistent quality Proven track record in non-obsolescence of the legacy Power MOSFET for the last 30-40 years, helping customers to support the A&D market Description MACOM’s GaN portfolio of plastic power transistors afford MILCOM system designers the most cost effective solutions across a growing range of frequency bands while not compromising performance. Supporting voltage operation at 50 V with high gain to reduce input power requirements, the transistors maximize power and cooling efficiency and provide robust performance. Engineered using leading edge power transistor packaging techniques and innovative semiconductor designs, MACOM’s high power transistor products provide optimal operation for CW and pulsed applications. Block Diagram Land Mobile Radio Limiter Diode MADL-011021 LNAs and GPAs GaAs ICs MAAL-010704 MAAL-011078 MAAL-011229 Attenuator MAATSS0018 MAATCC0006 200 W Switch MASW-011040 POWER AMPLIFIERS HARMONIC FILTERING 5 200 W Switch MASW-011041 Power Amplifiers MRF Devices GaN Devices NPA1008 NPA1006 NPT2021 NPT2022 NPT2024 Buffer IC VCO GaAs ICs Hybrid ICs MAAM-009116 PLL Hybrid ICs Attenuator Diode VVAs MAADSS0016 GaAs VVAs MAAD-000523 GaAs DATs MAAVSS0004 DRIVER AMPLIFIER Driver Amplifier GaAs ICs MAAM-009286 MAAP-011232 XF1001 MIXER IF AMPLIFIER Mixer GaAs ICs Diode ICs Diode Devices Hybrid ICs IF Amplifier GaAs ICs MAAM-011206 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 7 RF Power Products: GaN Multipurpose / RF Power Transistors GaN on Si: CW and Pulsed Part Number Min Freq (MHz) NPA1006 20 NPT2022 1 Operating Voltage (V) Output Power Psat (W) 1000 28 12.5 2000 50 100 Max Freq (MHz) Gain (dB) Efficiency (%) Test Freq (MHz) 14 >45 900 6 x 5 mm DFN-8 20 >60 900 TO-272 Package NPT2021 1 2500 50 4 17 >55 2500 TO-272 NPA1007 30 2500 28 10 14 >50 2000 6 x 5 mm DFN-8 NPA1008 20 2700 28 5 12 >45 1900 4 x 4 mm PQFN-24 NPT2024 1 2700 50 200 22 65 900 TO-272-4 NPT1012B 1 4000 28 25 13 >50 3000 AC360B-2 NPTB00025AB 1 4000 28 25 13 >50 3000 AC360B-2 NPTB00025B 1 4000 28 25 13 >50 3000 AC360B-2 MAGx-011086 1 6000 28 4 9 >50 5800 4 x 4 mm QFN-24 NPT2018 1 6000 50 12.5 17.5 >50 2500 6 x 3 mm PDFN-14 NPTB00004A 1 6000 28 5 17 >50 2500 SOIC-8NE NPTB00004D 1 6000 28 5 17 >50 2500 SOIC-8NE MAGx-100027-050* 1 2700 50 50 17 65 2700 TO-272S-2 MAGx-100027-100* 1 2700 50 100 17 65 2700 TO-272S-2 MAGx-100027-300* 1 2700 50 300 16 63 2700 TO-272S-4 Output Power Psat (W) Gain (dB) Efficiency (%) Test Freq (MHz) * In development RF Energy / RF Power Transistors GaN on Si: CW Min Freq (MHz) Max Freq (MHz) Operating Voltage (V) MAGe-100809-600* 896 928 50 600 21 73 915 MAGe-100809-1K0* 896 928 50 1000 20 72 915 MAGe-100825-002* 896 2500 50 2 19.5 73 2450 6 x 3 mm DFN-14 MAGe-100825-005* 896 2500 50 5 19.5 73 2450 6 x 3 mm DFN-14 MAGe-100825-010* 896 2500 50 10 19.5 73 2450 7 x 7 mm PQFN-20 MAGe-102425-015* 2400 2500 50 15 18.5 73 2450 7 x 7 mm PQFN-20 MAGe-102425-030* 2400 2500 50 30 18.5 73 2450 7 x 7 mm PQFN-20 Part Number Package P-282 P-283 MAGe-102425-050* 2400 2500 50 50 17.5 72 2450 TO-272S-2 MAGe-102425-100* 2400 2500 50 100 17.5 72 2450 TO-272S-2 MAGe-102425-300* 2400 2500 50 300 16.5 70 2450 TO-272S-4 * In development GaN and GaAs Device Bias Sequencer Positive Supply Voltage (V) Positive Supply Current (mA) Negative Supply Voltage (V) Negative Supply Current (mA) Output Gate Voltage (V) Output Gate Current (mA) Pulse Enable TTL Voltage (V) Package MABC-001000-DP000L 50 14 -6 -3 -8 to 0 50 3.3 SMJ2307 MABC-001000-DPS00L 50 14 -6 -3 -8 to 0 50 3.3 SMJ2307 Part Number 6 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 8 GaN Package Guide Package Type: Plastic Packages Package Type: Ceramic Air Cavity SOT89-3LD AC-200B-2 AC-200S-2 AC-360B-2 AC-360S-2 SOIC-EP 3 x 6 mm PDFN-14LD 4 mm PQFN-24LD AC-400S-2 5 x 6 mm PDFN-8LD AC-650B-4 7 mm PQFN-20LD TO-272-2 TO-272S-2 TO-272-4 TO-272S-2B AC-780B-2 AC-780S-2 AC-780B-4 AC-780S-4 TO-272S-4 AC-1230B-4 7 AC-1230S-4 GaN2016 brochure_singles_052316_Layout 1 5/24/16 8:30 AM Page 9