isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 100 V(Min) ·DC Current Gain: hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to Type MJE253 APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current 1 A PC Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ B Ti Tstg 1.5 W 15 150 ℃ -65~150 ℃ Junction Temperature Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 83.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE243 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5 A ;IB= 50mA 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A ;IB= 0.2A 1.8 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 1V 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 VCB= 100V; IE= 0;TC= 125℃ 0.1 0.1 μA mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 μA hFE-1 DC Current Gain IC= 0.2 A ; VCE= 1V 40 hFE-2 DC Current Gain IC= 1A ; VCE= 1V 15 Current-Gain—Bandwidth Product IC= 0.1 A; VCE= 10V; ftest = 10MHz 40 Collector Capacitance IE= 0; VCB= 10V; ftest = 0.1MHz fT COB isc Website：www.iscsemi.cn CONDITIONS MIN MAX 100 UNIT V 180 MHz 50 pF