ISC MJE243 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE243
DESCRIPTION
·Collector–Emitter Sustaining Voltage: VCEO(SUS) = 100 V(Min)
·DC Current Gain: hFE = 40(Min) @ IC= 0.2 A
·Low Collector Saturation Voltage: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
·Complement to Type MJE253
APPLICATIONS
·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current
1
A
PC
Collector Power Dissipation
Ta=25℃
Collector Power Dissipation
TC=25℃
B
Ti
Tstg
1.5
W
15
150
℃
-65~150
℃
Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.34
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
83.4
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
MJE243
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5 A ;IB= 50mA
0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1A ;IB= 0.1A
0.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A ;IB= 0.2A
1.8
V
VBE(on)
Base-Emitter On Voltage
IC= 0.5A; VCE= 1V
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
VCB= 100V; IE= 0;TC= 125℃
0.1
0.1
μA
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
0.1
μA
hFE-1
DC Current Gain
IC= 0.2 A ; VCE= 1V
40
hFE-2
DC Current Gain
IC= 1A ; VCE= 1V
15
Current-Gain—Bandwidth Product
IC= 0.1 A; VCE= 10V; ftest = 10MHz
40
Collector Capacitance
IE= 0; VCB= 10V; ftest = 0.1MHz
fT
COB
isc Website:www.iscsemi.cn
CONDITIONS
MIN
MAX
100
UNIT
V
180
MHz
50
pF
Similar pages