IXYS IXDN404PI 4 ampere dual low-side ultrafast mosfet driver Datasheet

IXDN404 / IXDI404 / IXDF404
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Features
General Description
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 4A Peak
• Wide Operating Range: 4.5V to 35V
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
The IXDN404/IXDI404/IXDF404 is comprised of two 4 Ampere
CMOS high speed MOSFET drivers. Each output can source
and sink 4A of peak current while producing voltage rise and
fall times of less than 15ns to drive the latest IXYS MOSFETs
and IGBT's. The input of the driver is compatible with TTL or
CMOS and is fully immune to latch up over the entire operating
range. A patent-pending circuit virtually eliminates CMOS
power supply cross conduction and current shoot-through.
Improved speed and drive capabilities are further enhanced by
very low, matched rise and fall times.
Applications
•
•
•
•
•
•
•
•
•
•
Driving MOSFETs and IGBTs
Motor Controls
Line Drivers
Pulse Generators
Local Power ON/OFF Switch
Switch Mode Power Supplies (SMPS)
DC to DC Converters
Pulse Transformer Driver
Class D Switching Amplifiers
Limiting di/dt Under Short Circuit
The IXDN404 is configured as a dual non-inverting gate driver,
the IXDI404 is a dual inverting gate driver, and the IXDF404 is a
dual inverting + non-inverting gate driver.
The IXDN404/IXDI404/IXDF404 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-16)
packages. For enhanced thermal performance, the SOP-8 and
SOP-16 are also available in a package with an exposed
grounded metal back as the SI and SI-16 repectively.
Ordering Information
Part Number
IXDN404PI
IXDN404SI
IXDN404SIA
IXDN404SI-16
IXDN404SIA-16
IXDI404PI
IXDI404SI
IXDI404SIA
IXDI404SI-16
IXDI404SIA-16
IXDF404PI
IXDF404SI
IXDF404SIA
IXDF404SI-16
IXDF404SIA-16
Package Type
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
8-Pin PDIP
8-Pin SOIC with Grounded Metal Back
8-Pin SOIC
16-Pin SOIC with Grounded Metal Back
16-Pin SOIC
Temp. Range
Configuration
-55°C to
+125°C
Dual Non
Inverting
-55°C to
+125°C
Dual Inverting
-55°C to
+125°C
Inverting +
Non Inverting
NOTE: Mounting or solder tabs on all packages are connected to ground
DS99018B(08/04)
Copyright © IXYS CORPORATION 2004
First Release
IXDN404 / IXDI404 / IXDF404
Figure 1 - IXDN404 Dual 4A Non-Inverting Gate Driver Functional Block Diagram
Vcc
IN A
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT A
N
P
OUT B
N
GND
Figure 2 - IXDI404 Dual Inverting 4A Gate Driver Functional Block Diagram
Vcc
IN A
IN B
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
P
OUT A
N
P
OUT B
N
GND
Figure 3 - IXDF404 Inverting + Non-Inverting 4A Gate Driver Functional Block Diagram
Vcc
IN A
IN B
* Patent Pending
ANTI-CROSS
CONDUCTION
CIRCUIT *
ANTI-CROSS
CONDUCTION
CIRCUIT *
GND
2
P
OUT A
N
P
OUT B
N
IXDN404 / IXDI404 / IXDF404
Absolute Maximum Ratings (Note 1)
Parameter
Supply Voltage
All Other Pins
Junction Temperature
Storage Temperature
Value
40V
-0.3V to VCC + 0.3V
150oC
-65oC to 150oC
300oC
Soldering Lead Temperature
(10 seconds maximum)
Thermal Resistance (Junction to Case) (θJC)
8 Pin SOIC (SI)
10 K/W
16 Pin SOIC (SI-16)
10 K/W
Electrical Characteristics
Operating Ratings
Parameter
Value
-55 oC to 125 oC
Operating Temperature Range
Thermal Resistance (To Ambient)
8 Pin PDIP (PI) (θJA)
120 K/W
8 Pin SOIC (SIA)
110 K/W
110 K/W
16 Pin SOIC (SIA-16) (θJA)
θJA with heat sink **
Heat sink area of 1 cm2
8 Pin SOIC
95 K/W
16 Pin SOIC-CT
95 K/W
2
Heat sink area of 3 cm
8 Pin SOIC
85 K/W
16 Pin SOIC-CT
85 K/W
** Device soldered to metal back pane. Heat sink area is 1 oz.
copper on 1 side of 0.06" thick FR4 PC board.
Unless otherwise noted, TA = 25 oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol
Parameter
Test Conditions
Min
VIH
High input voltage
4.5V ≤ VCC ≤ 18V
2.5
VIL
Low input voltage
4.5V ≤ VCC ≤ 18V
VIN
Input voltage range
IIN
Input current
VOH
High output voltage
VOL
Low output voltage
ROH
Output resistance
@ Output High
Output resistance
@ Output Low
Peak output current
ROL
IPEAK
IDC
0V ≤ VIN ≤ VCC
Typ
Max
Units
V
0.8
V
-5
VCC + 0.3
V
-10
10
µA
VCC - 0.025
V
0.025
V
VCC = 18V
2
2.5
Ω
VCC = 18V
1.5
2
Ω
VCC = 18V
4
tR
Continuous output
current
Rise time
CL=1800pF Vcc=18V
tF
Fall time
tONDLY
A
1
A
16
18
ns
CL=1800pF Vcc=18V
13
17
ns
CL=1800pF Vcc=18V
36
40
ns
CL=1800pF Vcc=18V
35
39
ns
VCC
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
18
35
V
ICC
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µA
µA
tOFFDLY
4.5
Specifications Subject To Change Without Notice
Note 1: Operating the device beyond parameters with listed “Absolute Maximum Ratings” may cause permanent
damage to the device. Typical values indicate conditions for which the device is intended to be functional, but do not
guarantee specific performance limits. The guaranteed specifications apply only for the test conditions listed.
Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
3
IXDN404 / IXDI404 / IXDF404
Electrical Characteristics
Unless otherwise noted, temperature over -55oC to 150oC, 4.5V ≤ VCC ≤ 35V .
All voltage measurements with respect to GND. Device configured as described in Test Conditions. All specifications are for one channel.
Symbol
Parameter
Test Conditions
Min
VIH
High input voltage
4.5V ≤ VCC ≤ 18V
2.4
VIL
Low input voltage
4.5V ≤ VCC ≤ 18V
VIN
Input voltage range
IIN
Input current
VOH
High output voltage
VOL
Low output voltage
ROH
Output resistance
@ Output High
Output resistance
@ Output Low
Peak output current
ROL
IPEAK
IDC
tR
Continuous output
current
Rise time
tF
tONDLY
0V ≤ VIN ≤ VCC
Typ
Max
Units
V
0.8
V
-5
VCC + 0.3
V
-10
10
µA
VCC - 0.025
V
0.025
V
VCC = 18V
3.4
Ω
VCC = 18V
2
Ω
VCC = 18V
3.2
A
1
A
CL=1000pF Vcc=18V
11
ns
Fall time
CL=1000pF Vcc=18V
13
ns
CL=1000pF Vcc=18V
60
ns
CL=1000pF Vcc=18V
59
ns
VCC
On-time propagation
delay
Off-time propagation
delay
Power supply voltage
18
35
V
ICC
Power supply current
VIN = 3.5V
VIN = 0V
VIN = + VCC
1
0
3
10
10
mA
µA
µA
tOFFDLY
4.5
Specifications Subject To Change Without Notice
4
IXDN404 / IXDI404 / IXDF404
Pin Description
SYMBOL
IN A
FUNCTION
A Channel Input
GND
Ground
IN B
B Channel Input
OUT B
B Channel Output
VCC
Supply Voltage
OUT A
A Channel Output
DESCRIPTION
A Channel Input signal-TTL or CMOS compatible.
The system ground pin. Internally connected to all circuitry, this pin provides
ground reference for the entire chip. This pin should be connected to a low
noise analog ground plane for optimum performance.
B Channel Input signal-TTL or CMOS compatible.
B Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
Positive power-supply voltage input. This pin provides power to the entire
chip. The range for this voltage is from 4.5V to 35V.
A Channel Driver output. For application purposes, this pin is connected via
a resistor to a gate of a MOSFET/IGBT.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when
handling and assembling this component.
Figure 4 - Characteristics Test Diagram
Vcc
10uF
25V
1 NC
2 In A
3 Gnd
4
NC 8
7
Out A
Vcc 6
Out B 5
In B
Agilent 1147A
Current Probe
1800 pF
5
Agilent 1147A
Current Probe
1800 pF
IXDN404 / IXDI404 / IXDF404
Typical Performance Characteristics
Fig. 6
Rise Times vs. Supply Voltage
80
80
70
70
60
60
Fall Times (ns)
Rise Time (ns)
Fig. 5
50
40
10000pF
30
6800pF
Fall Times vs. Supply Voltage
50
40
10000pF
30
6800pF
20
20
4700pF
1800pF
10
4700pF
1800pF
1000pF
10
1000pF
200pF
200pF
0
0
5
10
15
20
25
30
5
35
10
15
Supply Voltage (V)
Fig. 7
Output Rise Times vs. Load Capacitance
25
30
35
Output Fall Times vs. Load Capacitance
Fig. 8
80
80
8V
70
8V
70
60
10V
60
12V
50
Fall Time (ns)
Rise Time (ns)
20
Supply Voltage (V)
18V
40
25V
35V
30
50
12V
40
18V
25V
35V
30
20
20
10
10
0
10V
0
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
0
1000
2000
Load Capacitance (pF)
Fig. 9
3000
4000
5000
6000
7000
8000
9000
10000
Load Capacitance (pF)
Rise And Fall Times vs. Temperature
C L = 1000pF, V cc = 18V
Fig. 10
2.5
14
M ax / M in Input vs. Temperature
C L = 1000pF, V cc = 18V
2.4
12
2.3
Max / Min Input Voltage
tR
10
Time (ns)
tF
8
6
4
2.2
M in Input High
2.1
2
Max Input Low
1.9
1.8
1.7
2
1.6
0
1.5
-60
-10
40
90
140
-60
190
Temperature (C)
-10
40
90
Tem perature (C)
6
140
190
IXDN404 / IXDI404 / IXDF404
Fig. 11
Supply Current vs. Load Capacitance
Vcc = 8V
100
Fig. 12
1000
2 MHz
Supply Current vs. Frequency
Vcc = 8V
90
1 MHz
70
60
50
40
500 kHz
30
10
1
0.1
20
10
0
100
10000 pF
6800 pF
4700 pF
1800 pF
1000 pF
200 pF
100
Supply Current (ma)
Supply Current (mA)
80
100 kHz
50 kHz
10H
kHz
1000
0.01
1
10000
10
Supply Current vs. Load Capacitance
Vcc = 12V
Fig. 14
1000
100
100
Supply Current (ma)
Supply Current (mA)
10000 pF
6800 pF
4700 pF
1800 pF
1000 pF
1 Mhz
80
70
60
500 kHz
50
40
30
20
200 pF
10
1
0.1
100 kHz
50 kHz
10
10 kHz
1000
0.01
10000
1
10
Load Capacitance (pF)
Fig. 15
Fig. 16
1000
90
2 MHz
1 MHz
1000
10000 pF
6800 pF
4700 pF
1800 pF
1000 pF
200 pF
100
Supply Current (ma)
70
60
50
40
30
20
10000
Supply Current vs. Frequency
Vcc = 18V
500 kHz
80
Supply Current (mA)
100
Frequency (kHz)
Supply Current vs. Load Capacitance
Vcc = 18V
100
10
1
0.1
100 kHz
50 kHz
10
0
100
10000
Supply Current vs. Frequency
Vcc = 12V
2 MHz
90
0
100
1000
Frequency (kHz)
Load Capacitance (pF)
Fig. 13
100
10 kHz
1000
0.01
1
10000
10
100
Frequency (kHz)
Load Capacitance (pF)
7
1000
10000
IXDN404 / IXDI404 / IXDF404
Fig. 17
100
Supply Current vs. Frequency
Vcc = 35V
Fig. 18
Supply Current vs. Load Capacitance
Vcc = 35V
1000
10000 pF
6800 pF
4700 pF
90
Supply Current (mA)
Supply Current (mA)
1800 pF
100
80
2 MHz
70
1 MHz
60
500 kHz
50
40
100 kHz
30
20
1000 pF
200 pF
10
1
0.1
50 kHz
10
10 kHz
0
100
1000
0.01
1
10000
10
Propagation Delay vs. Supply Voltage
CL = 1800pF Vin = 5V@1kHz
Fig. 19
70
10000
50
45
Propagation Delay (ns)
Propagation Delay (ns)
1000
Propagation Delay vs. Input Voltage
CL = 1800pF Vcc = 15V
Fig. 20
60
50
tONDLY
40
tOFFDLY
30
20
tONDLY
40
tOFFDLY
35
30
25
10
20
0
5
10
15
20
25
30
2
35
4
Fig. 22
Fig. 21 Propagation Delay Times vs. Temperature
C L = 1000pF, Vcc = 18V
8
10
12
Q u ie s c e n t S u p p ly C u rre n t v s . T e m p e ra tu re
V cc = 1 8 V , V in = 5 V @ 1 kH z , C L = 1 0 0 0 p F
0 .3
60
Quiescent Vcc input Current (mA)
55
50
45
tONDLY
40
6
Input Voltage (V)
Supply Voltage (V)
Time (ns)
100
Frequency (kHz)
Load Capacitance (pF)
tOFFDLY
35
30
0 .2 5
0 .2
0 .1 5
0 .1
0 .0 5
25
0
20
-60
-10
40
90
140
-6 0
190
Temperature (C)
8
-1 0
40
90
T e m p e ra tu re (C )
140
190
IXDN404 / IXDI404 / IXDF404
Fig. 23
High State Ouput Resistance vs. Supply Voltage
Fig. 24
Low State Output Resistance vs. Supply Voltage
6
Low State Output Resistance (Ohms)
High State Output Resistance (Ohms)
6
5
4
3
2
1
0
5
4
3
2
1
0
5
10
15
20
25
30
35
5
10
Supply Voltage (V)
Fig. 25
20
Fig. 26
Vcc vs. P Channel Output Current
N Channel Output Current (A)
-4
-6
-8
-10
-12
Vcc vs. N Channel Ouput Current
10
8
6
4
2
10
15
20
25
30
35
5
10
15
20
Vcc (V)
25
30
35
Vcc (V)
P Channel Output Current vs. Temperature
Vcc = 18V, CL = 1000pF
Fig. 28
6
N Channel Output Current (A)
P Channel Output Current (A)
35
0
5
6
30
12
-2
Fig. 27
25
Supply Voltage (V)
0
P Channel Output Current (A)
15
5
4
3
2
1
0
N Channel Output Current vs. Temperature
Vcc = 18V CL = 1000pF
5
4
3
2
1
0
-80
-30
20
70
Temperature (C)
120
170
-80
-30
20
70
Temperature (C)
9
120
170
IXDN404 / IXDI404 / IXDF404
PIN CONFIGURATIONS
1
NC
2
IN A
3
GND
4
INB
NC
8
1
NC
OUT A
7
2
IN A
VS 6
3
GND
OUT B 5
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDN404
1 NC
NC 16
NC
8
1
NC
OUT A
7
2
IN A
VS 6
3
GND
OUT B 5
4
INB
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDI404
1 NC
NC 16
NC
8
OUT A
7
VS 6
OUT B 5
8 Lead PDIP (PI)
8 Pin SOIC (SI)
IXDF404
1 NC
NC 16
2 IN A
OUT A 15
2 IN A
OUT A 15
2 IN A
OUT A 15
3 NC
OUT A 14
3 NC
OUT A 14
3 NC
OUT A 14
4 GND
VCC 13
4 GND
VCC 13
4 GND
VCC 13
5 GND
VCC 12
5 GND
VCC 12
5 GND
VCC 12
6 NC
OUT B 11
6 NC
OUT B 11
6 NC
OUT B 11
7 IN B
OUT B 10
7 IN B
OUT B 10
7 IN B
OUT B 10
8 NC
NC 9
16 Pin SOIC
IXDN404SI-16
8 NC
NC 9
16 Pin SOIC
IXDI404SI-16
8 NC
NC 9
16 Pin SOIC
IXDF404SI-16
Supply Bypassing, Grounding Practices And Output Lead inductance
GROUNDING
In order for the design to turn the load off properly, the IXDN404
must be able to drain this 2.5A of current into an adequate
grounding system. There are three paths for returning current
that need to be considered: Path #1 is between the IXDN404
and its load. Path #2 is between the IXDN404 and its power
supply. Path #3 is between the IXDN404 and whatever logic is
driving it. All three of these paths should be as low in resistance
and inductance as possible, and thus as short as practical. In
addition, every effort should be made to keep these three
ground paths distinctly separate. Otherwise, the returning
ground current from the load may develop a voltage that would
have a detrimental effect on the logic line driving the IXDN404.
When designing a circuit to drive a high speed MOSFET
utilizing the IXDN404/IXDI404/IXDF404, it is very important to
observe certain design criteria in order to optimize performance
of the driver. Particular attention needs to be paid to Supply
Bypassing, Grounding, and minimizing the Output Lead
Inductance.
Say, for example, the IXDN404 is being used to charge a
2500pF capacitive load from 0 to 25 volts in 25ns.
Using the formula: I= ∆V C / ∆t, where ∆V=25V C=2500pF &
∆t=25ns, one can determine that to charge 2500pF to 25 volts
in 25ns will take a constant current of 2.5A. (In reality, the
charging current won’t be constant and will peak somewhere
around 4A).
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and its
load as short and wide as possible. If the driver must be placed
farther than 2” (5mm) from the load, then the output leads
should be treated as transmission lines. In this case, a twistedpair should be considered, and the return line of each twisted
pair should be placed as close as possible to the ground pin
SUPPLY BYPASSING
In order for the design to turn the load on properly, the IXDN404
must be able to draw this 2.5A of current from the power supply
in the 25ns. This means that there must be very low impedance
between the driver and the power supply. The most common
method of achieving this low impedance is to bypass the power
supply at the driver with a capacitance value that is a magnitude
larger than the load capacitance. Usually, this would be
achieved by placing two different types of bypassing capacitors,
with complementary impedance curves, very close to the driver
itself. (These capacitors should be carefully selected, low
inductance, low resistance, high-pulse current-service
capacitors). Lead lengths may radiate at high frequency due
to inductance, so care should be taken to keep the lengths of
the leads between these bypass capacitors and the IXDN404
to an absolute minimum.
of the driver, and connected directly to the ground terminal
of the load.
10
IXDN404 / IXDI404 / IXDF404
Dimenional Outline: IXDD404PI
Dimenional Outlines: IXDD404SI-CT and IXDD404SIA
Dimenional Outlines: IXDD404SI-16CT and IXDD404SIA-16
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: [email protected]
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: [email protected]
11
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