TEL D882 Plastic-encapsulated transistor Datasheet

Transys
Electronics
L I M I T E D
TO-251/252 Plastic-Encapsulated Transistors
6. 5 0¡ À
0. 10
0. 5 1¡ À
0 . 03
5¡ ã
À. 10
5. 50¡ 0
TRANSISTOR (NPN)
2 . 30¡ À
0. 05
5. 3 0¡ À
0. 05
14. 70
D882
TO-251
TO-252-2
5¡ ã
FEATURES
5¡ ã
7. 70
0. 80¡ À
0. 0 5
0. 6 0¡ À
0. 0 5
1.
Power dissipation
2. 3 0¡ À
0. 05
2. 3 0¡ À
0. 0 5
1 . 20
0. 51 ¡ À
0 . 03
123
2.
W (Tamb=25℃)
COLLECTOR
6. 50¡ À
0 . 15
2. 30¡ À
0 . 10
5. 30¡ À
0. 10
0. 51¡ À
0 . 05
5¡ ã
EMITTER
À. 10
5. 50¡ 0
1. 20
0. 51¡ À
0 . 10
0¡ 0
« . 10
5¡ ã
5¡ ã
0. 6
0. 80¡ À
0. 10
2. 30¡ À
0 . 10
123
À. 15
1. 60¡ 0
0. 60¡ À
0. 10
2. 30¡ À
0. 10
0¡ ¡ ã«
9¡ ã
0. 51
À. 20
2. 70¡ 0
3.
Collector current
ICM:
3 A
Collector-base voltage
V(BR)CBO:
40 V
Operating and storage junction temperature range
À. 10
0. 75¡ 0
1.25
À. 20
9. 70¡ 0
PCM:
BASE
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10 mA, IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 40V, IE=0
1
µA
Collector cut-off current
ICEO
VCE= 30V, IB=0
10
µA
Emitter cut-off current
IEBO
VEB= 6V, IC=0
1
µA
hFE(1)
VCE= 2V, IC= 1A
60
hFE(2)
VCE= 2V, IC= 100mA
32
Collector-emitter saturation voltage
VCE (sat)
IC= 2A, IB= 0.2 A
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC= 2A, IB= 0.2 A
1.5
V
400
DC current gain
fT
Transition frequency
VCE= 5V, Ic=0.1A
f =10MHz
50
MHz
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
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