Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA Description The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Features *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Unit V V mA mA A W W/ Tj, Tstg Ratings 20 ±5 600 470 2.5 1.0 0.008 -55 ~ +150 Symbol Rthj-a Value 125 Unit /W Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. G1332E Page: 1/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 1 - S VDS=5V, ID=600mA IGSS - - ±10 uA VGS= ±5V - - 1 uA VDS=20V, VGS=0 - - 10 uA VDS=16V, VGS=0 - - 600 - - 1200 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ m Total Gate Charge2 Qg - 1.3 2 Gate-Source Charge Qgs - 0.3 - Gate-Drain (“Miller”) Change Qgd - 0.5 - Td(on) - 4 - Tr - 10 - Td(off) - 15 - Tf - 2 - Input Capacitance Ciss - 38 60 Output Capacitance Coss - 17 - Reverse Transfer Capacitance Crss - 12 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=4.5V, ID=600mA VGS=2.5V, ID=400mA nC ID=600mA VDS=16V VGS=4.5V ns VDS=10V ID=600mA VGS=10V RG=3.3 RD=16.7 pF VGS=0V VDS=10V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions IS=300mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on FR4 board, t G1332E 10sec. Page: 2/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode G1332E Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Page: 3/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G1332E Page: 4/4