BUH315 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: ■ HORIZONTAL DEFLECTION FOR COLOUR TV ■ SWITCH MODE POWER SUPPLIES 3 2 1 ISOWATT218 DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (I E = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 700 V V EBO Emitter-Base Voltage (IC = 0) 10 V 6 A IC I CM IB Parameter Collector Current Collector Peak Current (tp < 5 ms) Base Current I BM Base Peak Current (tp < 5 ms) P t ot Total Dissipation at Tc = 25 C T stg St orage Temperature Tj o Max. Operating Junction Temperature November 1999 12 A 3 A 5 A 44 W -65 to 150 o C 150 o C 1/7 BUH315 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.8 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it I CES Collector Cut-off Current (V BE = 0) V CE = 1500 V 200 µA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 100 µA V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) I C = 100 mA 700 V Emitter-Base Voltage (I C = 0) I E = 10 mA 10 V V CE(sat )∗ Collector-Emitter Saturation Voltage IC = 3 A I B = 0.75 A 1.5 V V BE(s at)∗ Base-Emitt er Saturation Voltage IC = 3 A I B = 0.75 A 1.3 V DC Current Gain IC = 3 A IC = 3 A V CE = 5 V V CE = 5 V V EBO h F E∗ o T j = 100 C ts tf RESISTIVE LO AD Storage Time Fall Time V CC = 400 V I B1 = 0.75 A ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A I B1 = 0.75 A f = 15625 Hz IB2 = -1.5 A π 6 V c eflybac k = 1050 sin 10 t V 5 ts tf INDUCTIVE LO AD Storage Time Fall Time IC = 3 A I B1 = 0.75 A 6 3.5 IC = 3 A IB2 = 1.5 A f = 31250 Hz IB2 = -1.5 A π V c eflybac k = 1200 sin 106 t V 5 ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/7 Thermal Impedance 12 1.6 110 2.4 200 µs ns 3.5 340 µs ns 3.5 270 µs ns BUH315 Derating Curve DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Power Losses at 16 KHz Switching Time Inductive Load at 16KHz (see figure 2) 3/7 BUH315 Power Losses at 32 KHz Switching Time Inductive Load at 32 KHz (see figure 2) Reverse Biased SOA BASE DRIVE INFORMATION In order to saturate the power switch and reduce conduction losses, adequate direct base current IB1 has to be provided for the lowest gain hFE at 100 oC (line scan phase). On the other hand, negative base current IB2 must be provided to turn off the power transistor (retrace phase). Most of the dissipation, in the deflection application, occurs at switch-off. Therefore it is essential to determine the value of IB2 which minimizes power losses, fall time tf and, consequently, Tj. A new set of curves have been defined to give total power losses, ts and tf as a function of IB2 at both 16 KHz and 32 KHz scanning frequencies for choosing the optimum negative drive. The test circuit is illustrated in 4/7 figure 1. Inductance L 1 serves to control the slope of the negative base current IB2 to recombine the excess carrier in the collector when base current is still present, this would avoid any tailing phenomenon in the collector current. The values of L and C are calculated from the following equations: 1 1 1 L (IC)2 = C (VCEfly)2 ω = 2 πf = 2 2 √ L C Where IC= operating collector current, VCEfly= flyback voltage, f= frequency of oscillation during retrace. BUH315 Figure 1: Inductive Load Switching Test Circuits. Figure 2: Switching Waveforms in a Deflection Circuit 5/7 BUH315 ISOWATT218 MECHANICAL DATA DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 mm TYP. MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 21.20 19.90 23.60 42.50 5.25 20.75 2.3 0.819 0.752 0.898 1.594 0.191 0.797 0.083 9 20.80 19.10 22.80 40.50 4.85 20.25 2.1 0.835 0.783 0.929 1.673 0.207 0.817 0.091 0.181 3.7 0.138 - Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 µm 6/7 MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.354 4.6 3.5 inch TYP. 0.146 P025C/A BUH315 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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