Chip Schottky Barrier Rectifier FM220-MT THRU FM2200-MT Formosa MS List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 6 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities........................................................... 7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Chip Schottky Barrier Rectifier Formosa MS FM220-MT THRU FM2200-MT 2.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V Package outline Features SOD-123T • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0.156(3.9) 0.140(3.5) • Low profile surface mounted application in order to • • • • • • • • • optimize board space. Tiny plastic SMD package. Low power loss, high efficiency. High current capability, l ow forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.FM220-MT-H. 0.012(0.3) Typ. 0.075(1.9) 0.060(1.5) 0.067(1.7) 0.051(1.3) 0.008(0.20)Typ. Mechanical data 0.096(2.4) 0.040 (1.0) 0.080(2.0) 0.024 (0.6) 0.024(0.6)Typ. • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123T / MINI SMA • Terminals :Plated terminals, solderable per MIL-STD-750, 0.064(1.6) 0.048(1.2) 0.036(0.9) 0.020(0.5) 0.052(1.3) 0.036(0.9) Method 2026 0.0375(0.95) 0.0296(0.75) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.018 gram 0.044(1.10) 0.028(0.70) Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT PARAMETER o T A=25 C unless otherwise noted) Symbol CONDITIONS Forward rectified current See Fig.1 Forward surge current 8.3ms single half sine-wave (JEDEC methode) MIN. TYP. O V R = V RRM T J = 100 C Thermal resistance Diode junction capacitance 2.0 A I FSM 50 A 0.2 IR mA 10 Junction to ambient R θJA 84 O C/W Junction to case R θJC 42 O C/W CJ 160 f=1MHz and applied 4V DC reverse voltage Storage temperature T STG SYMBOLS *1 V RRM (V) V RMS*2 (V) *3 VR (V) FM220-MT 20 14 20 FM230-MT 30 21 30 *4 VF (V) Operating temperature T J, ( OC) 0.50 -55 to +125 FM240-MT 40 28 40 FM250-MT 50 35 50 FM260-MT 60 42 60 FM280-MT 80 56 80 FM2100-MT 100 70 100 0.90 0.92 FM2150-MT 150 105 150 FM2200-MT 200 140 200 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 UNIT IO O V R = V RRM T J = 25 C Reverse current MAX. pF O +175 -65 C *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage 0.70 *4 Maximum forward voltage@I F=2.0A 0.85 -55 to +150 Page 2 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Rating and characteristic curves (FM220-MT THRU FM2200-MT) FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL FORWARD AVERAGE FORWARD CURRENT,(A) CHARACTERISTICS 2.4 50 2.0 50 0-M 2 FM T~ 22 -M FM 1.2 T 0-M 24 0-M 20 FM T~ 0.8 INSTANTANEOUS FORWARD CURRENT,(A) 2 FM 1.6 T 0.4 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,(°C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 20V ~ 40V 10 50V ~ 60V 80V ~ 100V 3.0 150V~200V 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle PEAK FORWARD SURGE CURRENT,(A) 50 .01 40 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 30 8.3ms Single Half TJ=25 C Sine Wave 20 JEDEC method 10 FIG.5 - TYPICAL REVERSE 0 1 5 50 10 CHARACTERISTICS 100 100 20V~40V 50V~200V NUMBER OF CYCLES AT 60Hz 10 REVERSE LEAKAGE CURRENT, (mA) FIG.4-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,(pF) 700 600 500 400 300 200 TJ=100°C 1.0 0.1 TJ=25°C 0.01 100 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) Page 3 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Chip Schottky Barrier Rectifier FM220-MT THRU FM2200-MT Formosa MS Pinning information Pin Pin1 Pin2 Simplified outline cathode anode Symbol 1 2 1 2 Marking Type number Marking code FM220-MT FM230-MT FM240-MT FM250-MT FM260-MT FM280-MT FM2100-MT FM2150-MT FM2200-MT 22 23 24 25 26 28 20 215 220 Suggested solder pad layout 0.016 (0.40) 0.024 (0.60) 0.056 (1.40) 0.048 (1.20) 0.083 (2.10) 0.037 (0.95) 0.040(1.00) 0.041 (1.05) 0.041 (1.05) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Chip Schottky Barrier Rectifier Formosa MS FM220-MT THRU FM2200-MT Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOD-123T Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.90 3.90 1.68 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Chip Schottky Barrier Rectifier Formosa MS FM220-MT THRU FM2200-MT Reel packing PACKAGE SOD-123T REEL SIZE 7" COMPONENT SPACING REEL (pcs) (m/m) 4.0 2,500 BOX (pcs) 25,000 INNER BOX REEL DIA, CARTON SIZE CARTON APPROX. GROSS WEIGHT (m/m) (m/m) (m/m) (pcs) (kg) 183*183*123 178 382*262*387 9.5 200,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%± 25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) o 150 C o 200 C 60~120sec Tsmax to T L -Ramp-upRate o <3 C /sec Time maintained above: -Temperature(T L ) -Time(t L ) o 217 C 60~260sec o o 255 C- 0/ + 5 C Peak Temperature(T P ) o Time within 5 C of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <3 C /sec o o Time 25 C to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 <6minutes Page 6 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7 Chip Schottky Barrier Rectifier FM220-MT THRU FM2200-MT Formosa MS High reliability test capabilities Item Test Conditions Reference O MIL-STD-750D METHOD-2031 O MIL-STD-202F METHOD-208 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16" ± 1/32" 2. Solderability at 245 ± 5 C for 5 sec. 3. High Temperature Reverse Bias V R=80% rate at T J=125 C for 168 hrs. 4. Forward Operation Life Rated average rectifier current at T A=25 C for 500hrs. MIL-STD-750D METHOD-1038 O MIL-STD-750D METHOD-1027 O O 5. Intermittent Operation Life 6. Pressure Cooker T A = 25 C, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 JESD22-A102 O 15P SIG at T A=121 C for 4 hrs. O MIL-STD-750D METHOD-1051 O 7. Temperature Cycling -55 C to +125 C dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Forward Surge 8.3ms single half sine-wave , one surge. 9. Humidity at T A=85 C , RH=85% for 1000hrs. 10. High Temperature Storage Life at 175 C for 1000 hrs. MIL-STD-750D METHOD-4066-2 MIL-STD-750D METHOD-1021 O http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1031 O Page 7 Document ID Issued Date Revised Date DS-12162B 2009/02/10 2011/12/02 Revision C Page. 7