POSEICO AFF450AS45 Fast recovery diode Datasheet

FAST RECOVERY DIODE
AFF450A
INSULATED MODULE
Repetitive voltage up to
*Full ermetic packaging
*Industrial compatible packaging
*Insulation using Aln substrate
*6KVrms insulation voltage available on request
*Contact screws avaliable on request
Mean on-state current
4500 V
448 A
Surge current
10 kA
FINAL SPECIFICATION
apr 17 - ISSUE : 2
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
150
4500
V
V
RSM
Non-repetitive peak reverse voltage
150
4600
V
I
RRM
Repetitive peak reverse current
150
50
mA
CONDUCTING
I
F (AV)
Mean on-state current
180° sin, 50Hz, Tc=100°C
I
F (AV)
Mean on-state current
180° sin. 50Hz, Tc=55°C
I
FSM
Surge on-state current
sine wave, 10 ms
I² t
I² t
without reverse voltage
V
F
On-state voltage
On-state current =
V
F(TO)
Threshold voltage
F
On-state slope resistance
r
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
t rr
V FR
IF=
448,5
150
1500 A
1000 A
A
703,3
A
10,0
kA
500 x1E3
A²s
150
2,525
V
150
1,40
V
150
0,750
mohm
150
1600
µC
150 A/µs
100 V
150
500
A
Reverse recovery time
di/dt=
VR =
150
6,4
µs
Peak forward recovery
di/dt=
400 A/µs
150
60
µs
50
°C/kW
MOUNTING
R
th(j-c)
Thermal impedance
Junction to case, per element
R
th(c-h)
Thermal impedance
Case to heatsink, per element
T
j
Operating junction temperature
V
ins
RMS insulation voltage
50Hz, circuit to base,all terminal shorted
Mounting tourque
Case to heatsink
Busbars to terminals
T
Mass
ORDERING INFORMATION : AFF450A S 45
standard specification
VRRM/100
25
20
°C/kW
-30 / 150
°C
4500
V
4 to 6
12 to 18
1500
Nm
Nm
g
(*) 6000V available on request.
Add HVI to the desired code in
phase of order, i.e. AFF230HVIS26
Thermal impedance FAST DIODE MODULE
FINAL SPECIFICATION
apr 17 - ISSUE : 2
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
90
Tj =150°C
80
70
50
IF
40
VFR
30
VF
20
10
0
0
200
400
600
800
1000
1200
di/dt [A/µs]
REVERSE RECOVERY CHARGE
Tj = 150 °C
REVERSE RECOVERY CURRENT
Tj = 150 °C
900
2000
800
1000 A
1600
1000 A
700
500 A
500 A
600
1200
Irr [A]
Qrr [µC]
VFR [V]
60
800
500
400
300
400
200
100
0
0
100
200
300
di/dt [A/µs]
400
0
0
100
200
300
400
di/dt [A/µs]
ta = Irr / (di/dt)
tb = trr - ta
IF
d i/d t
ta
tb
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2
)
Irr
Vr
AFF450A FAST RECOVERY DIODE
FINAL SPECIFICATION
apr 17 - ISSUE : 2
SURGE CHARACTERISTIC
Tj = 150 °C
ON-STATE CHARACTERISTIC
Tj = 150 °C
12
1400
10
8
1000
ITSM [kA]
On-state Current [A]
1200
800
600
6
4
400
2
200
0
0
1
1,5
2
2,5
1
On-state Voltage [V]
10
n° cycles
TRANSIENT THERMAL IMPEDANCE
60,0
Zth j-c [°C/kW]
50,0
40,0
30,0
20,0
10,0
0,0
0,001
0,1
10
t[s]
All the characteristics given in this data sheet are guaranteed only with uniform clamping force,
cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.
In the interest of product improvement POSEICO SPA reserves the right to change any data given
in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded background) and
characteristics is reported.
Distributed by
100
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