IRLS530A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.12Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 10.7 A n Improved Gate Charge n Extended Safe Operating Area TO-220F n Lower Leakage Current : 10µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Value Units Drain-to-Source Voltage Characteristic 100 V Continuous Drain Current (TC=25℃) 10.7 Continuous Drain Current (TC=100℃) 7.5 IDM Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ , TSTG TL ① A 49 A ±20 V ② 228 mJ ① 10.7 A ① 3.6 mJ ③ 6.5 V/ns 36 W 0.24 W/℃ Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and - 55 to +175 Storage Temperature Range ℃ Maximum Lead Temp. for Soldering 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 4.2 RθJA Junction-to-Ambient -- 62.5 Units o C/W Rev. A N-CHANNEL POWER MOSFET IRLS530A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance 100 -- -- -- 0.1 -- V/℃ 1.0 -- 2.0 V -- -- 100 VDS=VGS, ID=250μA VGS=20V VGS=-20V -- -100 -- 10 -- -- 100 -- -- 0.12 Ω VGS=5V,ID=5.35A ④ -- S VDS=40V,ID=5.35 ④ Forward Transconductance -- 10.2 Input Capacitance -- 580 755 Coss Output Capacitance -- 140 175 Crss Reverse Transfer Capacitance -- 60 75 td(on) Turn-On Delay Time -- 10 30 Rise Time -- 11 30 Turn-Off Delay Time -- 29 70 Fall Time -- 15 40 tf See Fig 7 -- gfs td(off) nA VGS=0V,ID=250μA ID=250μA -- Ciss tr V Test Condition Qg Total Gate Charge -- 16.9 24 Qgs Gate-Source Charge -- 2.7 -- Qgd Gate-Drain(“Miller”) Charge -- 9.7 -- μA pF VDS=100V VDS=80V,TC=150℃ VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=50V,ID=14A, ns RG=6Ω See Fig 13 ④⑤ VDS=80V,VGS=5V, nC ID=14A See Fig 6 & Fig 12 ④ ⑤ Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 14 ISM Pulsed-Source Current ① -- -- 49 VSD Diode Forward Voltage ④ -- -- 1.5 trr Reverse Recovery Time -- 109 Qrr Reverse Recovery Charge -- 0.41 A Test Condition Integral reverse pn-diode in the MOSFET V TJ=25℃,IS=10.7A,VGS=0V -- ns TJ=25℃,IF=14A -- μC diF/dt=100A/μs Notes ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=3mH, IAS=10.7A, VDD=25V, RG=27Ω, Starting TJ =25℃ ③ ISD≤14A, di/dt≤350A/μs, VDD≤BVDSS , Starting TJ =25℃ ④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2% ⑤ Essentially Independent of Operating Temperature ④ N-CHANNEL POWER MOSFET IRLS530A Fig 1. Output Characteristics Fig 2. Transfer Characteristics 102 VGS 101 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ID , Drain Current [A] ID , Drain Current [A] Top : @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 100 10-1 100 101 175 oC 100 25 oC @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test - 55 oC 10-1 101 0 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 0.20 VGS = 5 V 0.15 0.10 VGS = 10 V 0.05 @ Note : TJ = 25 oC 101 100 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 175 oC 25 oC -1 0.00 0 15 30 45 60 10 0.4 0.6 0.8 ID , Drain Current [A] 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 1000 C iss 600 C oss 400 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 200 00 10 101 VDS , Drain-Source Voltage [V] 6 VGS , Gate-Source Voltage [V] Capacitance [pF] 800 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 20 V VDS = 50 V VDS = 80 V 4 2 @ Notes : ID = 14 A 0 0 3 6 9 12 QG , Total Gate Charge [nC] 15 18 N-CHANNEL POWER MOSFET IRLS530A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 3.0 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 @ Notes : 1. V = 0 V GS 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 7 A 0.5 2. I = 250 µA D 0.8 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 -75 200 -50 -25 o 0 25 50 75 100 125 150 175 200 TJ , Junction Temperature [oC] TJ , Junction Temperature [ C] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature 15 Operation in This Area is Limited by R ID , Drain Current [A] DS(on) 100 µs 1 ms 101 10 ms DC 0 10 @ Notes : 1. T = 25 oC C 12 9 6 3 2. T = 175 oC J 3. Single Pulse 10-1 0 10 101 0 25 102 50 75 100 125 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Thermal Response Fig 11. Thermal Response 100 D=0.5 @ Notes : 1. Z J C (t)=2.41 0.2 o θ 10- 1 C/W Max. 0.1 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Z θJC t1 single pulse 10- 5 (t) PDM 0.02 0.01 θJC Z (t) , ID , Drain Current [A] 102 10- 4 10- 3 t2 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 150 175 N-CHANNEL POWER MOSFET IRLS530A Fig 12. Gate Charge Test Circuit & Waveform * Current Regulator ” VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Current Sampling (ID) Resistor Charge Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 10V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time N-CHANNEL POWER MOSFET IRLS530A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by ＂RG＂ • IS controlled by Duty Factor ＂D＂ Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5