Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 37.5 A) • Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP75N04YUG -E1-AY ∗1 NP75N04YUG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) ∗2 Channel Temperature Storage Temperature Repetitive Avalanche Current ∗3 Repetitive Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 40 ±20 ±75 ±225 138 1.0 175 −55 to +175 35 123 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Rth(ch-C) Rth(ch-A) 1.09 150 °C/W °C/W Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt *3. Tch(peak) ≤ 150°C, RG = 25 Ω R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 Page 1 of 6 NP75N04YUG Chapter Title Electrical Characteristics (TA = 25°C) Item Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance ∗1 Symbol IDSS IGSS VGS(th) | yfs | Min Typ 2.0 23 RDS(on) 3.0 46 3.8 Drain to Source On-state Resistance ∗1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage ∗1 Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 4300 400 250 27 10 66 6 77 20 25 0.93 39 46 Max 1 ±100 4.0 4.8 Unit μA nA V S mΩ Test Conditions VDS = 40 V, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 μ A VDS = 5 V, ID = 37.5 A VGS = 10 V, ID = 37.5 A pF pF pF ns ns ns ns nC nC nC V ns nC VDS = 25 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 37.5 A, VGS = 10 V, RG = 0 Ω 6450 600 450 54 25 132 15 116 1.5 VDD = 32 V, VGS = 10 V, ID = 75 A IF = 75 A, VGS = 0 V IF = 75 A, VGS = 0 V, di/dt = 100 A/μ s Note: ∗1. Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% BVDSS IAS 90% VDS VGS 0 VDS 10% 0 10% Wave Form VDS ID τ VDD Starting Tch τ = 1 μs Duty Cycle ≤ 1% td(on) tr ton td(off) tf toff TEST CIRCUIT 3 GATE CHARGE PG. D.U.T. IG = 2 mA RL 50 Ω VDD R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 Page 2 of 6 NP75N04YUG Chapter Title DERATING FACTOR OF FORWARD BIAS SAFE TOTAL POWER DISSIPATION vs. OPERATING AREA CASE TEMPERATURE 160 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % Typical Characteristics (TA = 25°C) 80 60 40 20 140 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 d it e Lim V ) 10 =1 ID(pulse) 100 R G (V ) S PW =1 10 0μ s Power Dissipation Limited 10 11 m 1 110 s 1 m s ID - Drain Current - A 1 n (o DS 1 0.1 TC = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Rth(ch-A): 150°C/W 100 10 Rth(ch-C): 1.09°C/W 1 0.1 Single pulse Mounted on glass epoxy substrate of 40 mm x 40 mm x 0.8 mmt 0.01 100 μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 Page 3 of 6 NP75N04YUG Chapter Title DRAIN CURRENT vs. FORWARD TRANSFER CHARACTERISTICS DRAIN TO SOURCE VOLTAGE 1000 TA = −55°C 25°C 75°C 125°C 175°C 100 200 ID - Drain Current - A ID - Drain Current - A 250 150 100 50 10 1 0.1 0.01 VGS = 10 V Pulsed 0 VDS = 10 V Pulsed 0.001 0 0.5 1 1.5 1 4 5 6 GATE TO SOURCE THRESHOLD VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN vs. CHANNEL TEMPERATURE CURRENT 4 3.5 3 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0.5 0 -100 0 100 100 Ta = −55°C 25°C 75°C 125°C 175°C 10 VDS = 5V Pulsed 1 200 0.1 1 Tch - Channel Temperature - °C 10 100 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 10 VGS = 10 V Pulsed 5 0 0.1 1 10 100 ID - Drain Current - A R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 3 VGS - Gate to Source Voltage - V | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V VDS - Drain to Source Voltage - V 2 10 Pulsed ID = 75 A 37.5 A 15 A 5 0 0 5 10 15 20 VGS - Gate to Source Voltage - V Page 4 of 6 NP75N04YUG Chapter Title DRAIN TO SOURCE ON-STATE RESISTANCE vs. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 VGS = 10 V ID = 37.5 A Pulsed 10 5 0 -100 1000 Coss Crss 100 VGS = 0V f = 1MHz 10 0 100 200 0.1 Tch - Channel Temperature - °C VDD = 20 V VGS = 10 V RG = 0 Ω td(off) 100 td(on) tr 10 tf 40 1 100 12 ID = 75 A 35 10 VDD = 32 V 20 V 8V 30 25 8 VGS 20 6 15 4 10 2 VDS 5 0 0.1 1 10 100 0 0 ID - Drain Current - A 20 40 60 80 QG - Gate Charge - nC REVERSE RECOVERY TIME vs. DRAIN CURRENT SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 100 VGS = 10 V 0V 10 1 Pulsed 0.1 0 0.5 1 VF(S-D) - Source to Drain Voltage - V R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 1.5 trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V 1000 1 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns Ciss 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 1 10 100 IF - Drain Current - A Page 5 of 6 VGS - Gate to Source Voltage - V 15 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ CHANNEL TEMPERATURE NP75N04YUG Chapter Title Package Drawings (Unit: mm) 1.27 8-pin HSON (Mass: 0.13 g TYP.) 1 5 +0.1 5.0 ±0.2 6 4 0.42 −0.05 7 3 6.0 ±0.2 5.15 ±0.2 8 2 0.10 S 3.8 ±0.2 1.45 MAX. 0.73 0.4 0.42 ±0.05 0 +0.05 −0 0.10 M 5.4 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 3.18 ±0.2 0.6 ±0.15 0.8 ±0.15 Equivalent Circuit Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. R07DS0018EJ0100 Rev.1.00 Jul 01, 2010 Page 6 of 6 Revision History NP75N04YUG Rev. Date Page 1.00 Jul 01, 2010 − Description Summary First Eddition Issued All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. 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