AO6415 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO6415 is Pb-free (meets ROHS & Sony 259 specifications). AO6415L is a Green Product ordering option. AO6415 and AO6415L are electrically identical. VDS (V) = -20V ID = -3.3A (VGS = -10V) RDS(ON) < 75mΩ (VGS = -10V) RDS(ON) < 100mΩ (VGS = -4.5V) RDS(ON) < 150mΩ (VGS = -2.5V) ESD Rating: 2000V HBM TSOP6 Top View D D G 1 6 2 5 3 4 D D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. ±12 V -14 1.25 W 0.8 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -2.7 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Units V -3.3 TA=25°C Power Dissipation A Maximum -20 RθJA RθJL Typ 82 111 56 Max 100 140 70 Units °C/W °C/W °C/W AO6415 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 VDS=-16V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 TJ=55°C µA VDS=0V, VGS=±12V ±10 µA 75 VGS=-4.5V, ID=-2A 80 100 mΩ VGS=-2.5V, ID=-1A 115 150 mΩ VDS=-5V, ID=-3.3A 7 IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance -0.65 -0.82 512 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-2A Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs Qrr A 105 VSD SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge -1.4 62 Forward Transconductance Rg -0.9 84 TJ=125°C gFS Reverse Transfer Capacitance µA ±1 Static Drain-Source On-Resistance Crss Units VDS=0V, VGS=±10V RDS(ON) Output Capacitance -0.5 -2.5 VGS=-10V, ID=-3.3A Coss Max V -0.003 IDSS IS Typ VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=3Ω mΩ S -1 V -1.5 A 620 pF 77 pF 62 pF 9.2 13 Ω 4.9 6 nC 0.8 nC 1.2 nC 11 13 8 10 ns ns 34 41 ns 12 15 ns 13 17 4 6 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0 : Nov 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 25 -10V 20 -4.5V 3 VDS=-5V 15 -ID(A) -ID (A) -3.5V 10 2 VGS=-2.5V 125°C 1 5 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 140 1.6 VGS=-2.5V 100 Normalized On-Resistance 120 RDS(ON) (mΩ) 25°C VGS=-4.5V 80 60 VGS=-10V 40 ID=-1A, VGS=-2.5V 1.4 ID=-2A, VGS=-4.5V ID=-3.3A, VGS=-10V 1.2 1.0 20 0 1 2 3 0.8 4 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 200 ID=-3.3A 125°C 1E+00 160 1E-01 120 -IS (A) RDS(ON) (mΩ) 25 125°C 25°C 1E-02 1E-03 1E-04 80 25°C 1E-05 1E-06 40 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO6415 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 5 -VGS (Volts) 3 2 Ciss 600 Capacitance (pF) VDS=-10V ID=-2A 4 400 Coss 200 1 Crss 0 0 1 2 3 4 5 0 6 0 -Qg (nC) Figure 7: Gate-Charge Characteristics -ID (Amps) 20 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 15 100µs 1.00 10ms 1s 0.1s 10s 0.10 15 20 TJ(Max)=150°C TA=25°C 10.00 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) 100.00 5 10 DC 5 0.01 0.1 1 10 0 0.001 100 -VDS (Volts) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=140°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000