AOSMD AO6415 P-channel enhancement mode field effect transistor Datasheet

AO6415
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6415 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO6415 is Pb-free (meets ROHS & Sony
259 specifications). AO6415L is a Green Product ordering
option. AO6415 and AO6415L are electrically identical.
VDS (V) = -20V
ID = -3.3A (VGS = -10V)
RDS(ON) < 75mΩ (VGS = -10V)
RDS(ON) < 100mΩ (VGS = -4.5V)
RDS(ON) < 150mΩ (VGS = -2.5V)
ESD Rating: 2000V HBM
TSOP6
Top View
D
D
G
1 6
2 5
3 4
D
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
±12
V
-14
1.25
W
0.8
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-2.7
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Units
V
-3.3
TA=25°C
Power Dissipation A
Maximum
-20
RθJA
RθJL
Typ
82
111
56
Max
100
140
70
Units
°C/W
°C/W
°C/W
AO6415
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
VDS=-16V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
TJ=55°C
µA
VDS=0V, VGS=±12V
±10
µA
75
VGS=-4.5V, ID=-2A
80
100
mΩ
VGS=-2.5V, ID=-1A
115
150
mΩ
VDS=-5V, ID=-3.3A
7
IS=-1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
-0.65
-0.82
512
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-2A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge
IF=-2A, dI/dt=100A/µs
Qrr
A
105
VSD
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
-1.4
62
Forward Transconductance
Rg
-0.9
84
TJ=125°C
gFS
Reverse Transfer Capacitance
µA
±1
Static Drain-Source On-Resistance
Crss
Units
VDS=0V, VGS=±10V
RDS(ON)
Output Capacitance
-0.5
-2.5
VGS=-10V, ID=-3.3A
Coss
Max
V
-0.003
IDSS
IS
Typ
VGS=-4.5V, VDS=-10V, RL=5Ω,
RGEN=3Ω
mΩ
S
-1
V
-1.5
A
620
pF
77
pF
62
pF
9.2
13
Ω
4.9
6
nC
0.8
nC
1.2
nC
11
13
8
10
ns
ns
34
41
ns
12
15
ns
13
17
4
6
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Nov 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4
25
-10V
20
-4.5V
3
VDS=-5V
15
-ID(A)
-ID (A)
-3.5V
10
2
VGS=-2.5V
125°C
1
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
140
1.6
VGS=-2.5V
100
Normalized On-Resistance
120
RDS(ON) (mΩ)
25°C
VGS=-4.5V
80
60
VGS=-10V
40
ID=-1A, VGS=-2.5V
1.4
ID=-2A, VGS=-4.5V
ID=-3.3A, VGS=-10V
1.2
1.0
20
0
1
2
3
0.8
4
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+01
200
ID=-3.3A
125°C
1E+00
160
1E-01
120
-IS (A)
RDS(ON) (mΩ)
25
125°C
25°C
1E-02
1E-03
1E-04
80
25°C
1E-05
1E-06
40
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO6415
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
5
-VGS (Volts)
3
2
Ciss
600
Capacitance (pF)
VDS=-10V
ID=-2A
4
400
Coss
200
1
Crss
0
0
1
2
3
4
5
0
6
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
-ID (Amps)
20
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
15
100µs
1.00
10ms
1s
0.1s
10s
0.10
15
20
TJ(Max)=150°C
TA=25°C
10.00
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
100.00
5
10
DC
5
0.01
0.1
1
10
0
0.001
100
-VDS (Volts)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=140°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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