NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N16T1630C2B
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1M x 16 bit
Overview
Features
The N16T1630C2B is an integrated memory
device containing a low power 16 Mbit SRAM built
using a self-refresh DRAM array organized as
1,024,576 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16T1630C2B is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40oC to +85oC and is
available in JEDEC standard BGA packages
compatible with other standard 1Mb x 16 SRAMs.
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
100µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
35ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green option for BGA package
Product Family
Part Number
Package
Type
N16T1630C2BZ
48 - BGA
N16T1630C2BZ2 Green 48 - BGA
Operating
Temperature
Power
Supply (Vcc)
Speed
-40oC to +85oC
2.7V - 3.6V
70ns
55ns
Pin Configuration (Top View)
Standby
Operating
Current (ISB), Current (Icc),
Max
Max @ 3.0V
100 µA
3 mA @ 1MHz
Pin Description
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
CE2
A0-A19
Address Inputs
B
I/O8
UB
A3
A4
CE1
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
VSS
I/O11
A17
A7
I/O3
VCC
E
VCC
I/O12
NC
A16
I/O4
VSS
F
Write Enable Input
Chip Enable Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
I/O14 I/O13
A14
A15
I/O5
I/O6
G
WE
CE1, CE2
OE
LB
UB
I/O0-I/O15
I/O15
A19
A12
A13
WE
I/O7
VCC
Power
H
A18
A8
A9
A10
A11
NC
VSS
Ground
NC
Not Connected
48 Ball BGA
6 x 8 mm
Pin Name
Pin Function
Data Inputs/Outputs
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N16T1630C2B
NanoAmp Solutions, Inc.
Functional Block Diagram
Address
Inputs
A0 - A19
Address
Decode
Logic
Input/
Output
Mux
and
Buffers
1M
x 16 bit
RAM Array
I/O0 - I/O7
I/O8 - I/O15
CE1
CE2
WE
OE
UB
LB
Control
Logic
Functional Description
CE1
CE2
WE
OE
UB
LB
I/O0 - I/O151
MODE
POWER
H
X
X
X
X
X
High Z
Standby2
Standby
Standby
X
L
X
X
X
X
High Z
Standby2
L
H
X
X
H
H
High Z
Standby
Standby
L
X3
L1
L1
Data In
Write
Active
L
L1
L1
Data Out
Read
Active
H
1
L1
High Z
Active
Active
L
L
L
H
H
H
H
H
L
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
Capacitance1
Item
Symbol
Test Condition
Input Capacitance
CIN
CI/O
I/O Capacitance
Max
Unit
VIN = 0V, f = 1 MHz, TA = 25oC
8
pF
25oC
8
pF
VIN = 0V, f = 1 MHz, TA =
Min
1. These parameters are verified in device characterization and are not 100% tested
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N16T1630C2B
NanoAmp Solutions, Inc.
Absolute Maximum Ratings1
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VIN,OUT
–0.3 to VCC+0.3
V
Voltage on VCC Supply Relative to VSS
VCC
–0.3 to 4.5
V
Power Dissipation
PD
500
mW
Storage Temperature
TSTG
–40 to 125
o
Operating Temperature
TA
-40 to +85
oC
Soldering Temperature and Time
TSOLDER
260oC, 10sec
oC
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Min.
Typ1
Max
Unit
VCC
2.7
3.0
3.6
V
VIH
2.2
VCC+0.3
V
–0.3
0.6
V
Item
Symbol
Supply Voltage
Input High Voltage
Test Conditions
Input Low Voltage
VIL
Output High Voltage
VOH
IOH = -0.2mA
Output Low Voltage
VOL
IOL = 0.2mA
0.2
V
Input Leakage Current
ILI
VIN = 0 to VCC
0.5
µA
Output Leakage Current
ILO
OE = VIH or Chip Disabled
0.5
µA
Read/Write Operating Supply Current
@ 1 µs Cycle Time2
ICC1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
5.0
mA
Read/Write Operating Supply Current
@ 70 ns Cycle Time2
ICC2
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
25.0
mA
Maximum Standby Current
ISB1
VIN = VCC or 0V
Chip Disabled
tA= 85oC, VCC = 3.0 V
100.0
µA
VCC–0.2
V
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
3
N16T1630C2B
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
Input Pulse Level
0.1VCC to 0.9 VCC
Input Rise and Fall Time
5ns
Input and Output Timing Reference Levels
0.5 VCC
Operating Temperature
-40 oC to +85 oC
Output Load Circuit
VCC
14.5K
I/O
14.5K
30 pF
Output Load
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
4
N16T1630C2B
NanoAmp Solutions, Inc.
Timing
-55
-70
Item
Symbol
Read Cycle Time
tRC
Address Access Time
tAA
55
70
ns
Chip Enable to Valid Output
tCO
55
70
ns
Output Enable to Valid Output
tOE
30
35
ns
Byte Select to Valid Output
tLB, tUB
55
70
ns
Chip Enable to Low-Z output
tLZ
5
5
ns
Output Enable to Low-Z Output
tOLZ
5
5
ns
Byte Select to Low-Z Output
tBLZ
5
5
ns
Chip Disable to High-Z Output
tHZ
0
25
0
25
ns
Output Disable to High-Z Output
tOHZ
0
25
0
25
ns
Byte Select Disable to High-Z Output
tBHZ
0
25
0
25
ns
Output Hold from Address Change
tOH
10
10
ns
Write Cycle Time
tWC
55
70
ns
Chip Enable to End of Write
tCW
50
55
ns
Address Valid to End of Write
tAW
50
55
ns
Byte Select to End of Write
tBW
50
55
ns
Write Pulse Width
tWP
50
55
ns
Address Setup Time
tAS
0
0
ns
Write Recovery Time
tWR
0
0
ns
Write to High-Z Output
tWHZ
Data to Write Time Overlap
tDW
25
25
ns
Data Hold from Write Time
tDH
0
0
ns
End Write to Low-Z Output
tOW
5
5
ns
Min.
Max.
55
Min.
Max.
70
25
Units
ns
25
ns
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
5
N16T1630C2B
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE1 = OE = VIL, WE = CE2 = VIH)
tRC
Address
tAA
tOH
Data Out
Previous Data Valid
Data Valid
Timing Waveform of Read Cycle (WE=VIH)
tRC
Address
tAA
tHZ
CE1
tCO
CE2
tLZ
tOHZ
tOE
OE
tOLZ
tLB, tUB
LB, UB
tLBLZ, tUBLZ
Data Out
High-Z
tBHZ
Data Valid
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
6
N16T1630C2B
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
tWC
Address
tWR
tAW
CE1
tCW
CE2
tBW
LB, UB
tAS
tWP
WE
tDW
High-Z
tDH
Data Valid
Data In
tWHZ
tOW
High-Z
Data Out
Timing Waveform of Write Cycle (CE1 Control)
tWC
Address
tAW
CE1
(for CE2 Control, use
inverted signal)
tWR
tCW
tAS
tBW
LB, UB
tWP
WE
tDW
Data Valid
Data In
tLZ
Data Out
tDH
tWHZ
High-Z
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
7
N16T1630C2B
NanoAmp Solutions, Inc.
Ball Grid Array Package
0.23±0.05
0.90±0.10
D
A1 BALL PAD
CORNER (3)
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15 Z
0.05
TOP VIEW
Z
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
A1 BALL PAD
MAXIMUM SOLDER BALL DIAMETER.
CORNER
PARALLEL TO PRIMARY Z.
SD
e
SE
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
D
6±0.10
SD
SE
J
K
BALL
MATRIX
TYPE
0.375
0.375
1.125
1.375
FULL
E
8±0.10
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N16T1630C2B
NanoAmp Solutions, Inc.
Ordering Information
N16T1630C2BX(x)-XXI
Performance
Package
55 = 55ns
70 = 70ns
Z = BGA
Z2 = Green BGA
Revision History
Revision
Date
Change Description
A
January 2003
Initial Preliminary Release
B
August 2003
Corrected typo for Ioh and Iol
Increased Isb to 100uA at 3V
C
September 2003
Add test conditions
D
March 2004
Remove TSOP Package
E
August 2004
Changed ball(E3) from Vss to NC
F
January 2005
Added Green package offering
© 2004, 2005 NanoAmp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration purposes only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
(DOC#14-02-007 REV F ECN# 01-1103)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9