LQA30T300 Qspeed™ Family 300 V, 30 A Q-Series Diode Product Summary IF(AVG) VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 30 300 53 2.85 0.6 General Description A V nC A This device has the lowest QRR of any 300V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications • AC/DC and DC/DC output rectification • Output & freewheeling diodes • Motor control drive circuits • Uninterruptible Power Supply (UPS) inverters Pin Assignment Features • Low QRR, Low IRRM, Low tRR • High dIF/dt capable (1000A/µs) • Soft recovery A Benefits C • Increases efficiency • Eliminates need for snubber circuits • Reduces EMI filter component size & count • Enables extremely fast switching TO-220AC RoHS Compliant Package uses Lead-free plating and Green mold compound. Halogen free per IEC 61249-2-21. Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter VRRM IF(AVG) IFSM IFSM TJ TSTG Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Maximum junction temperature Storage temperature Lead soldering temperature Power dissipation PD Conditions TJ = 150 °C, TC = 99 °C 60 Hz, ½ cycle ½ cycle of T = 28 us Sinusoid, TC = 25 °C Leads at 1.6mm from case, 10 sec TC = 25 °C Rating Units 300 30 200 350 150 –55 to 150 300 113 V A A A °C °C °C W Rating Units 62 1.1 °C/W °C/W Thermal Resistance Symbol Resistance from: Conditions RθJA RθJC Junction to ambient Junction to case TO-220 TO-220 www.powerint.com January 2011 LQA30T300 Electrical Specifications at TJ= 25 °C (unless otherwise specified) Symbol Parameter Conditions Min Typ Max Units - 1.0 1.66 1.45 89 250 1.95 - µA mA V V pF DC Characteristics IR Reverse current VF Forward voltage CJ Junction capacitance VR = 300 V, TJ = 25 °C VR = 300 V, TJ = 125 °C IF = 30 A, TJ = 25 °C IF = 30 A, TJ = 150 °C VR = 10 V, 1 MHz Dynamic Characteristics tRR Reverse recovery time, dIF/dt = 200A/µs VR=200V, IF=30 A QRR Reverse recovery charge, dIF/dt = 200A/µs VR=200V, IF=30 A IRRM Maximum reverse recovery current, dIF/dt =200A/µs VR=200V, IF=30 A S t Softness = b dIF/dt =200A/µs VR=200V, IF=30 A ta TJ=25 °C - 13.7 - ns TJ=125 °C TJ=25 °C TJ =125 °C TJ =25 °C TJ=125 °C TJ =25 °C TJ=125 °C - 28.5 13 53 1.5 2.85 0.6 0.6 19 2.2 - ns nC nC A A Note to component engineers: Q-Series diodes employ Schottky technologies in their design and construction. Therefore, component engineers should plan their test setups to be similar to traditional Schottky test setups. (For further details, see application note AN-300.) VR D1 DUT L1 tRR IF dIF/dt ta 15V Pulse generator tb + Rg Q1 0 0.1xIRRM IRRM Figure 1. Reverse Recovery Definitions Figure 2. Reverse Recovery Test Circuit 2 www.powerint.com Rev 1.2 01/11 LQA30T300 60 55 50 45 40 35 30 25 20 15 10 5 0 1.0 0.9 Tj=125C 0.8 0.7 Tj=125C 0.6 IF (A) IF (A) Electrical Specifications at TJ= 25 °C (unless otherwise specified) 0.5 Tj=25C 0.4 Tj=25C 0.3 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 0.0 0.1 0.2 0.3 0.4 VF (V) Figure 3. Typical IF vs VF 0.6 0.7 0.8 0.9 1.0 Figure 4. Typical IF vs VF 350 60 300 50 250 40 IF(AV) (A) Cj (pF) 0.5 VF (V) 200 150 30 20 100 10 50 0 0 0 20 40 60 80 100 120 140 160 25 180 50 75 100 125 150 o VR (V) Case Temperature, TC ( C) Figure 5. Typical Cj vs VR Figure 6. DC Current Derating Curve 35 120 dIF /dt=500A/us 100 30 dIF /dt=200A/us 60 dIF /dt=200A/us 40 tRR (ns) QRR (nC) 80 25 20 dIF /dt=500A/us 15 20 10 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 I F (A) Figure 7. Typical QRR vs IF at Tj=125 °C 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 I F (A) Figure 8. Typical tRR vs IF at Tj=125 °C 3 Rev 1.2 01/11 www.powerint.com LQA30T300 120 100 IF(PEAK) (A) P (W) 80 60 40 20 0 25 50 75 100 125 150 duty cycle=10% 60 55 50 45 40 35 30 25 20 15 10 5 0 duty cycle=30% duty cycle=50% DC 25 o Case Temperature, TC ( C) 50 75 100 T C(°C) 125 150 Figure 10. IF(Peak) vs TC, f=70 kHz Figure 9. Power Derating Curve LQA30T300 1 D= 0.5 D = 0.3 D= 0.1 0.1 Zth(j-c)/Rth(j-c) D= 0.05 D= 0.02 D= 0.01 0.01 D=0.005 D=0.002 Single Pulse 0.001 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 t1(sec) Figure 11. Normalized Maximum Transient Thermal Impedance 4 www.powerint.com Rev 1.2 01/11 LQA30T300 Dimensional Outline Drawings Millimeters Dim MIN MAX A 4.32 4.70 A1 1.14 1.40 A2 2.03 2.79 C 0.34 0.610 D 9.65 10.67 E 2.49 2.59 E1 4.98 5.18 F 0.508 1.016 F1 1.14 1.78 H 14.71 16.51 H1 5.84 6.55 H2 8.51 9.25 H3 3.53 3.96 H4 2.54 3.05 L 12.70 14.22 L1 - 6.35 Mechanical Mounting Method Maximum Torque / Pressure specification Screw through hole in package tab Clamp against package body 1 Newton Meter (nm) or 8.8 inch-pounds (lb-in) 12.3 kilogram-force per square centimeter (kgf/cm2) or 175 lbf/in2 Soldering time and temperature: This product has been designed for use with hightemperature, lead-free solder. The component leads can be subjected to a maximum temperature of 300 °C, for up to 10 seconds. See Application Note AN-303, for more details. Ordering Information Part Number Package Packing LQA30T300 TO-220AC 50 units/tube The information contained in this document is subject to change without notice. 5 Rev 1.2 01/11 www.powerint.com LQA30T300 Revision 1.1 1.2 Notes Released by Qspeed Converted to Power Integrations Document Date 05/09 01/11 6 www.powerint.com Rev 1.2 01/11 LQA30T300 For the latest updates, visit our website: www.powerint.com Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein. POWER INTEGRATIONS MAKES NO WARRANTY HEREIN AND SPECIFICALLY DISCLAIMS ALL WARRANTIES INCLUDING, WITHOUT LIMITATION, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF THIRD PARTY RIGHTS. PATENT INFORMATION The products and applications illustrated herein (including transformer construction and circuits external to the products) may be covered by one or more U.S. and foreign patents, or potentially by pending U.S. and foreign patent applications assigned to Power Integrations. A complete list of Power Integrations’ patents may be found at www.powerint.com. Power Integrations grants its customers a license under certain patent rights as set forth at http://www.powerint.com/ip.htm. The PI Logo, TOPSwitch, TinySwitch, LinkSwitch, DPA-Switch, PeakSwitch, CAPZero, SENZero, LinkZero, HiperPFS, HiperTFS, Qspeed, EcoSmart, Clampless, E-Shield, Filterfuse, StackFET, PI Expert and PI FACTS are trademarks of Power Integrations, Inc. Other trademarks are property of their respective companies. ©Copyright 2011 Power Integrations, Inc. Power Integrations Worldwide Sales Support Locations WORLD HEADQUARTERS 5245 Hellyer Avenue San Jose, CA 95138, USA. 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