IXTR40P50P PolarPTM Power MOSFET VDSS ID25 RDS(on) = = ≤ - 500V - 22A Ω 260mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 500 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C - 22 A IDM TC = 25°C, Pulse Width Limited by TJM -120 A IA TC = 25°C - 40 A EAS TC = 25°C 3.5 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 312 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C 2500 V~ 20..120/4.5..27 N/lb. 5 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 HZ ,RMS, t= 1min Md Mounting Force Weight G D Isolated Tab S G = Gate S = Source D = Drain Features z z z z z z z z Silicon Chip on Direct-Copper Bond (DCB) Substrate - UL Recognized Package - Isolated Mounting Surface - 2500V~ Electrical Isolation Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Diode The Rugged PolarPTM Process Low QG Low Drain-to-Tab Capacitance Low Package Inductance Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. z V Applications V z BVDSS VGS = 0V, ID = - 250μA - 500 VGS(th) VDS = VGS, ID = -1mA - 2.0 IGSS VGS = ±20V, VDS = 0V ±100 nA IDSS VDS = VDSS, VGS = 0V - 50 μA - 250 μA RDS(on) TJ = 125°C VGS = -10V, ID = - 20A, Note 1 © 2012 IXYS CORPORATION, All Rights Reserved - 4.0 Easy to Mount Space Savings High Power Density z z z z High-Side Switches Push Pull Amplifiers DC Choppers Automatic Test Equipment Current Regulators 260 mΩ DS99937C(12/12) IXTR40P50P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = -10V, ID = - 20A, Note 1 23 Ciss VGS = 0V, VDS = - 25V, f = 1MHz Coss Crss td(on) Resistive Switching Times tr VGS = -10V, VDS = 0.5 • VDSS, ID = - 20A td(off) RG = 1Ω (External) tf Qg(on) VGS = -10V, VDS = 0.5 • VDSS, ID = - 20A Qgs Qgd ISOPLUS247 (IXTR) Outline 38 S 11.5 nF 1150 pF 93 pF 37 ns 59 ns 90 ns 34 ns 205 nC 55 nC 75 nC 1 - Gate 2,4 - Drain 3 - Source 0.40 °C/W RthJC RthCS 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V - 40 A ISM Repetitive, Pulse Width Limited by TJM -160 A VSD IF = - 20A, VGS = 0V, Note 1 - 3.0 V trr IF = - 20A, -di/dt = -150A/μs QRM VR = -100V, VGS = 0V IRM Note 1: 477 ns 14.5 μC - 61 A Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,860,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTR40P50P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC -90 -40 VGS = -10V - 7V -35 -70 ID - Amperes -30 ID - Amperes VGS = -10V -80 -25 - 6V -20 -15 - 7V -60 -50 -40 - 6V -30 -10 -20 -5 - 5V -10 - 5V 0 0 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -9 -5 -10 -15 -20 -25 -30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = - 20A Value vs. Junction Temperature 2.4 -40 VGS = -10V - 7V -35 VGS = -10V 2.0 -25 R DS(on) - Normalized ID - Amperes -30 - 6V -20 -15 I D = - 40A 1.6 I D = - 20A 1.2 -10 0.8 - 5V -5 0 0.4 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = - 20A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature -24 2.4 VGS = -10V 2.2 -20 2.0 ID - Amperes R DS(on) - Normalized TJ = 125ºC 1.8 1.6 1.4 -16 -12 -8 1.2 TJ = 25ºC -4 1.0 0 0.8 0 -10 -20 -30 -40 -50 -60 ID - Amperes © 2012 IXYS CORPORATION, All Rights Reserved -70 -80 -90 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXTR40P50P Fig. 7. Input Admittance Fig. 8. Transconductance -70 70 -60 60 -50 50 TJ = - 40ºC g f s - Siemens ID - Amperes 25ºC -40 TJ = 125ºC 25ºC - 40ºC -30 40 -20 20 -10 10 0 -3.5 125ºC 30 0 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 0 -10 -20 -30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode -50 -60 -70 Fig. 10. Gate Charge -140 -10 -9 VDS = - 250V -8 I D = - 20A -120 I G = -1mA -100 -7 -6 VGS - Volts IS - Amperes -40 ID - Amperes -80 -60 TJ = 125ºC -40 -5 -4 -3 TJ = 25ºC -2 -20 -1 0 -0.5 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 0 -4.0 20 40 VSD - Volts 60 80 100 120 140 160 180 200 220 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 - 1000 f = 1 MHz RDS(on) Limit - 100 25µs ID - Amperes Capacitance - PicoFarads Ciss 10,000 Coss 1,000 100 100µs 1ms - 10 10ms 100ms -1 TJ = 150ºC Crss TC = 25ºC Single Pulse 10 DC - 0.1 0 -5 -10 -15 -20 -25 -30 -35 -40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. - 10 - 100 VDS - Volts - 1000 IXTR40P50P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2012 IXYS CORPORATION, All Rights Reserved IXYS REF: T_40P50P(B9) 03-06-08-A