Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS(on) ≤ ≤ trr TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 26 A IDM TC = 25°C, pulse width limited by TJM 65 A IAR TC = 25°C 26 A EAR TC = 25°C 40 mJ EAS TC = 25°C 1.2 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS 10 V/ns Maximum Ratings 460 W -55 ... +150 150 -55 ... +150 °C °C °C TJ ≤ 150°C, RG = 5 Ω PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Plastic body Md Mounting torque (TO-3P&TO-247) FC Mounting force (PLUS220) Weight TO-3P TO-248 TO-268 PLUS220 & PLUS220SMD Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±30 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) °C °C 300 250 D S TO-3P (IXFQ) G D S D (TAB) TO-268 (IXFT) G S D (TAB) 11..65/2.5..15 N/lb 5.5 6.0 5.0 4.0 g g g g 600 2.5 TJ = 125°C G D D (TAB) S PLUS220SMD (IXFV_S) 1.13/10 Nm/lb.in. Characteristic Values Min. Typ. Max. VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved G PLUS220 (IXFV) TC = 25°C VDSS 600 V 26 A Ω 270 mΩ 200 ns V 5.0 V ±100 nA 25 250 µA µA 270 mΩ G S G = Gate S = Source D (TAB) D = Drain TAB = Drain Features z Fast Recovery diode z Unclamped Inductive Switching (UIS) rated z International standard packages z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99435(08/05) IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV 26N60P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 16 26 S 4150 pF 400 pF Crss 27 pF td(on) 25 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 27 ns td(off) RG = 5 Ω (External) 75 ns tf 21 ns Qg(on) 72 nC 27 nC 24 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.27 RthCK TO-3P, PLUS220 & TO-247 Source-Drain Diode 0.21 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 26 A ISM Repetitive 78 A VSD IF = IS, VGS = 0 V, pulse test 1.5 V trr IF = 25A, -di/dt = 100 A/µs 250 ns IRM VR = 100V; VGS = 0 V 150 QRM 7 A 0.7 µC Characteristic Curves Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 60 VGS = 10V 24 VGS = 10V 54 7V 7V 48 20 I D - Amperes I D - Amperes 42 16 6V 12 8 6V 36 30 24 18 12 4 5V 6 5V 0 0 0 1 2 3 4 5 6 0 7 3 6 V D S - Volts 9 12 15 18 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 21 24 27 30 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV 26N60P Fig. 3. Output Characte ris tics Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem pe rature @ 125º C 3.2 24 VGS = 10V R D S ( o n ) - Normalized I D - Amperes 20 16 6V 12 8 5V 4 VGS = 10V 2.8 7V 2.4 2 I D = 26A 1.6 I D = 13A 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 16 -50 -25 0 V D S - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Te m perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs . ID 30 3.2 VGS = 10V 27 TJ = 125∫ C 2.8 R D S ( o n ) - Normalized 25 24 21 I D - Amperes 2.4 2 1.6 18 15 12 9 6 TJ = 25∫ C 1.2 3 0 0.8 0 10 20 30 40 50 -50 60 -25 0 I D - Amperes 50 45 45 40 40 35 35 g f s - Siemens I D - Amperes 50 30 25 TJ = 125∫ C 25∫ C 15 50 75 100 125 150 Fig. 8. Transconductance Fig. 7. Input Adm ittance 20 25 TC - Degrees Centigrade -40∫ C TJ = -40∫ C 25∫ C 125∫ C 30 25 20 15 10 10 5 5 0 0 4 4.5 5 5.5 6 V G S - Volts © 2005 IXYS All rights reserved 6.5 7 7.5 0 5 10 15 20 25 30 I D - Amperes 35 40 45 50 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV 26N60P Fig. 9. Source Current vs. Source-To-Drain Voltage Fig. 10. Gate Charge 80 10 70 9 VDS = 300V 8 I D = 13A 7 I G = 10mA 50 VG S - Volts I S - Amperes 60 40 30 TJ = 125∫ C 6 5 4 3 20 TJ = 25∫ C 2 10 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 10 20 V S D - Volts 30 40 50 60 Q G - nanoCoulombs Fig. 11. Capacitance 10000 Capacitance - picoFarads f = 1MHz C iss 1000 C oss 100 C rss 10 0 5 10 15 20 25 30 35 40 V D S - Volts Fig. 12. Maxim um Transient Therm al Resistance R ( t h ) J C - ∫C / W 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. 0.1 1 10 70 80 IXFH 26N60P IXFQ 26N60P IXFV 26N60PS IXFT 26N60P IXFV 26N60P TO-3P (IXFQ) Outline TO-247 AD (IXFH) Outline 1 2 3 Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC A A1 L2 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220SMD (IXFV_S) PLUS220 (IXFV) Outline E E1 E1 E E1 A A1 L2 E1 D1 D D L3 A3 L3 L1 L4 L L L1 2X b e c A2 3X b 2X e c A2 Terminals: 1 - Gate 3 - Source A A1 A2 b c D D1 E E1 e L L1 L2 L3 © 2005 IXYS All rights reserved TO-268 (IXFT) Outline 2 - Drain TAB - Drain Terminals: 1 - Gate 2 - Drain 3 - Source 4 (TAB) - Drain A A1 A2 A3 b c D D1 E E1 e L L1 L2 L3 L4