AP4509GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1 D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
SO-8
SO-8
30V
RDS(ON)
14mΩ
ID
S1
G2
S2G2
G1S2
S1
G1
10A
P-CH BVDSS
Description
-30V
RDS(ON)
20mΩ
ID
-8.4A
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D2
D1
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
30
-30
V
+20
+20
V
3
10
-8.4
A
3
7.9
-6.7
A
30
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
1
201204033
AP4509GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS=0V, ID=250uA
2
Min.
Typ. Max. Units
30
-
-
V
VGS=10V, ID=9A
-
-
14
mΩ
VGS=4.5V, ID=5A
-
-
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=9A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=24V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=9A
-
23
65
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
14
-
nC
VDS=15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
10
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
36
-
ns
tf
Fall Time
VGS=10V
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
1770 2830
pF
Coss
Output Capacitance
VDS=25V
-
430
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Min.
Typ. Max. Units
IS=1.7A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=9A, VGS=0V
-
31
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
25
-
nC
2
AP4509GM
P-CH Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-8A
-
-
20
mΩ
VGS=-4.5V, ID=-4A
-
-
30
mΩ
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V
-
-
-100
uA
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-8A
-
27
45
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
18
-
nC
VDS=-15V
-
16
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=-10V
-
25
-
ns
Ciss
Input Capacitance
VGS=0V
-
1580 2530
pF
Coss
Output Capacitance
VDS=-25V
-
540
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
450
-
pF
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-8A, VGS=0V
-
40
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
32
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4509GM
N-Channel
160
140
T A = 25 o C
10V
7.0V
120
100
80
5.0V
60
4.5V
T A = 150 o C
120
ID , Drain Current (A)
ID , Drain Current (A)
140
10V
7.0V
100
80
60
5.0V
40
4.5V
40
20
20
V G =3.0V
V G =3.0V
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
Fig 2. Typical Output Characteristics
18
1.6
ID=9A
V G =10V
ID=5A
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
2
V DS , Drain-to-Source Voltage (V)
15
12
1.2
1.0
0.8
9
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
10
VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
2.0
4
1.5
2
0
1.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4509GM
N-Channel
f=1.0MHz
10000
I D =9A
V DS =24V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
C rss
2
0
100
0
10
20
30
40
50
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
10
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
1
100us
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135o C/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4509GM
P-Channel
120
160
-10V
o
T A = 25 C
140
-10V
T A = 150 o C
120
-ID , Drain Current (A)
-ID , Drain Current (A)
100
-7.0V
100
80
-5.0V
-4.5V
60
-7.0V
80
-5.0V
60
-4.5V
40
40
20
V G =-3.0V
20
0
V G =-3.0V
0
0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
33
1.6
I D =- 8 A
V G =-10V
ID=-4A
30
T A =25 o C
Normalized RDS(ON)
1.4
27
RDS(ON) (mΩ)
2
-V DS , Drain-to-Source Voltage (V)
24
21
1.2
1.0
0.8
18
0.6
15
2
4
6
8
10
-50
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
2.5
6
T j =150 o C
4
-VGS(th) (V)
-IS(A)
2
T j =25 o C
1.5
2
1
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4509GM
P-Channel
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
10000
I D =- 8 A
V DS =-24V
10
C (pF)
8
6
C iss
1000
C oss
C rss
4
2
100
0
0
10
20
30
40
50
1
60
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7