AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor TO-236 Top View (SOT-23) Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 155mΩ (VGS = 2.5V) General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current TA=70°C ID IDM B Junction and Storage Temperature Range 2014-5-29 Units V ±12 V A 3.1 15 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Maximum 30 3.8 TA=25°C Power Dissipation A S W 0.9 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 70 100 63 Max 90 125 80 Units °C/W °C/W °C/W www.kersemi.com KSM3418,KSM3418L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 IDSS Zero Gate Voltage Drain Current IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±12V VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V VGS=10V, ID=3.8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Typ Max 0.001 1 1.4 5 100 1.8 43 60 64 52 85 70 101 11.7 155 mΩ mΩ 0.81 1 2.5 V A V TJ=55°C 1 Units µA nA V 15 TJ=125°C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A VDS=5V, ID=3.8A Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current A mΩ S DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg 226 39 29 270 VGS=0V, VDS=15V, f=1MHz pF pF pF VGS=0V, VDS=0V, f=1MHz 1.4 1.7 Ω 3 1.4 0.55 3.6 VGS=4.5V, VDS=15V, ID=3.8A nC nC nC 2.6 3.2 14.5 2.1 10.2 4 5 22 3 13 ns ns ns ns 3.8 5 Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr tD(off) tf trr Qrr Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=3.9Ω, RGEN=6Ω Turn-Off Fall Time IF=3.8A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/µs ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2014-5-29 2 www.kersemi.com KSM3418,KSM3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3.5V 12 VDS=5V 8 4V 6V 3V 6 ID(A) ID (A) 9 4 6 VGS=2.5V 125°C 3 2 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 5 0 200 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 3.5 270 1.8 VGS=4.5V Normalized On-Resistance 175 ID=3.5A 1.6 150 RDS(ON) (mΩ) 25°C VGS=2.5V 125 1.7 1.4 100 75 1.2 VGS=4.5V 50 VGS=10V 25 3.6 0 VGS=2.5V ID=1A 1 0.8 0 2 4 6 8 10 VGS=10V ID=3.8A 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 13 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 100 ID=3.8A 90 1.0E+00 125°C 1.0E-01 70 125°C IS (A) RDS(ON) (mΩ) 80 1.0E-02 60 25°C 25°C 50 1.0E-03 40 1.0E-04 30 0 2 4 6 8 1.0E-05 10 0.0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 2014-5-29 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 3 www.kersemi.com KSM3418,KSM3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 5 VDS=15V ID=3.8A 350 Capacitance (pF) VGS (Volts) 4 3 2 300 Ciss 250 200 150 Coss Crss 100 1 50 0 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 270 TJ(Max)=150°C TA=25°C 100.0 5 20 TJ(Max)=150°C TA=25°C 1.7 RDS(ON) limited 100µs Power (W) ID (Amps) 10.0 15 10µs 1ms 0.1s 10ms 1.0 1s 3.6 10 5 10s DC 0 0.001 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 13 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 2014-5-29 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 100 1000 www.kersemi.com