Freescale MRF6VP11KGSR5 Rf power field effect transistors n--channel enhancement--mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6VP11KH
Rev. 8, 9/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for pulse wideband applications with frequencies up to
150 MHz. Devices are unmatched and are suitable for use in industrial,
medical and scientific applications.
• Typical Pulse Performance at 130 MHz: VDD = 50 Volts, IDQ = 150 mA,
Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 μsec,
Duty Cycle = 20%
Power Gain — 26 dB
Drain Efficiency — 71%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Power
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
CW Operation Capability with Adequate Cooling
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
R5 Suffix = 50 Units, 56 mm Tape Width, 13 Inch Reel.
•
•
•
•
•
•
MRF6VP11KHR6
MRF6VP11KGSR5
1.8--150 MHz, 1000 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05
STYLE 1
NI--1230--4
MRF6VP11KHR6
CASE 2282--02
NI--1230S--4 GULL
MRF6VP11KGSR5
PARTS ARE PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 67°C, 1000 W CW, 100 MHz
RθJC
0.13
°C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 80°C, 1000 W Peak, 100 μsec Pulse Width, 20% Duty Cycle
ZθJC
0.03
°C/W
Characteristic
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2008--2010, 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2000 V
Machine Model (per EIA/JESD22--A115)
A, passes 125 V
Charge Device Model (per JESD22--C101)
IV, passes 2000 V
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IGSS
—
—
10
μAdc
V(BR)DSS
110
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IDSS
—
—
5
mA
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 1600 μAdc)
VGS(th)
1
1.63
3
Vdc
Gate Quiescent Voltage (2)
(VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test)
VGS(Q)
1.5
2.2
3.5
Vdc
Drain--Source On--Voltage (1)
(VGS = 10 Vdc, ID = 4 Adc)
VDS(on)
—
0.28
—
Vdc
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
3.3
—
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
147
—
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
506
—
pF
Characteristic
Off Characteristics
(1)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 300 mA, VGS = 0 Vdc)
On Characteristics
Dynamic Characteristics (1)
Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 130
MHz, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain
Gps
24
26
28
dB
Drain Efficiency
ηD
69
71
—
%
Input Return Loss
IRL
—
--16
--9
dB
1. Each side of device measured separately.
2. Measurements made with device in push--pull configuration.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
MRF6VP11KHR6 MRF6VP11KGSR5
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
B1
+
+
+
C1
C2
C3
L1
R2
R1
C4
C5
C6
C7
C8
C9
Z4
Z1
+
L3
C10
C11
C13
Z8
RF
INPUT
VSUPPLY
Z5
C12
Z14
C16 C17 C18 C19
C15
C20
Z16
Z18
DUT
J1
L2
Z12
+
Z6
Z3
Z2
C21
Z10
C14
+
C23
C24
C25
J2
Z7
Z9
Z11
Z13
Z15
C26
Z17
T1
Z19
RF
OUTPUT
T2
C22
Z1
Z2*
Z3*
Z4, Z5
Z6, Z7, Z8, Z9
Z10, Z11
0.175″ x 0.082″ Microstrip
1.461″ x 0.082″ Microstrip
0.080″ x 0.082″ Microstrip
0.133″ x 0.193″ Microstrip
0.500″ x 0.518″ Microstrip
0.102″ x 0.253″ Microstrip
Z12, Z13
Z14, Z15
Z16*, Z17*
Z18
Z19
0.206″ x 0.253″ Microstrip
0.116″ x 0.253″ Microstrip
0.035″ x 0.253″ Microstrip
0.275″ x 0.082″ Microstrip
0.845″ x 0.082″ Microstrip
*Line length includes microstrip bends.
Figure 2. MRF6VP11KHR6 Test Circuit Schematic
Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
95 Ω, 100 MHz Long Ferrite Bead
2743021447
Fair--Rite
C1
47 μF, 50 V Electrolytic Capacitor
476KXM050M
Illinois Cap
C2
22 μF, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C3
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C4, C9, C17
10K pF Chip Capacitors
ATC200B103KT50XT
ATC
C5, C16
20K pF Chip Capacitors
ATC200B203KT50XT
ATC
C6, C15
0.1 μF, 50 V Chip Capacitors
CDR33BX104AKYS
Kemet
C7
2.2 μF, 50 V Chip Capacitor
C1825C225J5RAC
Kemet
C8
0.22 μF, 100 V Chip Capacitor
C1825C223K1GAC
Kemet
C10, C11, C13, C14
1000 pF Chip Capacitors
ATC100B102JT50XT
ATC
C12
18 pF Chip Capacitor
ATC100B180JT500XT
ATC
C18, C19, C20
470 μF, 63 V Electrolytic Capacitors
MCGPR63V477M13X26--RH
Multicomp
C21, C22
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C23
75 pF Chip Capacitor
ATC100B750JT500XT
ATC
C24, C25
100 pF Chip Capacitors
ATC100B101JT500XT
ATC
C26
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
J1, J2
Jumpers from PCB to T1 and T2
Copper Foil
L1
82 nH Inductor
1812SMS--82NJLC
CoilCraft
L2
47 nH Inductor
1812SMS--47NJLC
CoilCraft
L3*
10 Turn, 18 AWG Inductor, Hand Wound
Copper Wire
R1
1 KΩ, 1/4 W Carbon Leaded Resistor
MCCFR0W4J0102A50
Multicomp
R2
20 Ω, 3 W Chip Resistor
CPF320R000FKE14
Vishay
T1
Balun
TUI--9
Comm Concepts
T2
Balun
TUO--4
Comm Concepts
PCB
0.030″, εr = 2.55
CuClad 250GX--0300--55--22
Arlon
*L3 is wrapped around R2.
MRF6VP11KHR6 MRF6VP11KGSR5
RF Device Data
Freescale Semiconductor, Inc.
3
C1
C19
C2 C3
C17
C16
C15
C4
C5
C6
B1
C20
L1
C14
C7
C8
C9
C18
R1
C10
C11
C13
C21
T1
L3, R2*
T2
C24
J2
C25
L2
C12
CUT OUT AREA
J1
C23
C22
C26
MRF6VP11KH
Rev. 3
* L3 is wrapped around R2.
Figure 3. MRF6VP11KHR6 Test Circuit Component Layout
MRF6VP11KHR6 MRF6VP11KGSR5
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
100
Ciss
ID, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
1000
Coss
100
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
Crss
10
0
10
20
30
40
10
TC = 25°C
1
50
TJ = 175°C
TJ = 150°C
1
1
100
10
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Note: Each side of device measured separately.
Figure 4. Capacitance versus Drain--Source Voltage
Figure 5. DC Safe Operating Area
80
26
70
Gps
25
60
24
50
23
40
ηD
22
30
21
20
VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
20
10
100
1000
65
63
62
P1dB = 60.57 dBm (1140.24 W)
61
Actual
60
59
58
VDD = 50 Vdc, IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
57
10
2000
Ideal
P3dB = 61.23 dBm (1327.39 W)
64
Pout, OUTPUT POWER (dBm)
27
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
TJ = 200°C
56
30
31
32
33
34
35
36
37
38
39
Pout, OUTPUT POWER (WATTS) PEAK
Pin, INPUT POWER (dBm) PEAK
Figure 6. Power Gain and Drain Efficiency
versus Output Power
Figure 7. Output Power versus Input Power
28
32
28
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
IDQ = 6000 mA
3600 mA
1500 mA
750 mA
375 mA
24
150 mA
20
24
20
VDD = 30 V
40 V
35 V
16
10
100
1000
2000
12
50 V
IDQ = 150 mA, f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
VDD = 50 Vdc, f = 130 MHz
Pulse Width = 100 μsec, Duty Cycle = 20%
16
45 V
0
200
400
600
800
1000
1200
1400
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain versus Output Power
Figure 9. Power Gain versus Output Power
1600
MRF6VP11KHR6 MRF6VP11KGSR5
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm)
25_C
85_C
55
VDD = 50 Vdc
IDQ = 150 mA
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
50
45
20
25
30
40
35
25_C
25
50
24
Gps
23
VDD = 50 Vdc
IDQ = 150 mA
f = 130 MHz
Pulse Width = 100 μsec
Duty Cycle = 20%
22
20
10
1000
100
20
10
2000
Figure 11. Power Gain and Drain Efficiency
versus Output Power
0.18
108
0.16
VDD = 50 Vdc
Pout = 1000 W CW
ηD = 72%
0.12
D = 0.7
0.1
PD
D = 0.5
0.08
0.06
t2
TC = Case Temperature
ZθJC = Thermal Impedance (from graph)
PD = Peak Power Dissipation
t1 = Pulse Width; t2 = Pulse Period
D = Duty Factor = t1/t2
TJ (peak) = PD * ZθJC + TC
D = 0.3
D = 0.1
0
0.00001
0.0001
t1
0.001
0.01
0.1
1
RECTANGULAR PULSE WIDTH (S)
Figure 12. Transient Thermal Impedance
10
MTTF (HOURS)
0.14
0.02
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Output Power versus Input Power
ZθJC, THERMAL IMPEDANCE (°C/W)
40
ηD
21
45
60
85_C
Pin, INPUT POWER (dBm) PEAK
0.04
70
26
TC = --30_C
60
80
TC = --30_C
ηD, DRAIN EFFICIENCY (%)
27
65
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at freescale.com/RFpower. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
For Pulse applications or CW conditions, use the MTTF calculator
referenced above.
Figure 13. MTTF versus Junction Temperature -- CW
MRF6VP11KHR6 MRF6VP11KGSR5
6
RF Device Data
Freescale Semiconductor, Inc.
f = 130 MHz
Zsource
Zo = 10 Ω
f = 130 MHz
Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak
f
MHz
Zsource
Ω
Zload
Ω
130
1.58 + j6.47
4.6 + j1.85
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured from
drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
+
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP11KHR6 MRF6VP11KGSR5
RF Device Data
Freescale Semiconductor, Inc.
7
PACKAGE DIMENSIONS
MRF6VP11KHR6 MRF6VP11KGSR5
8
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
RF Device Data
Freescale Semiconductor, Inc.
9
MRF6VP11KHR6 MRF6VP11KGSR5
10
RF Device Data
Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Jan. 2008
• Initial Release of Data Sheet
Description
1
Apr. 2008
• Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS
compliant part number in Table 5, Test Circuit Component Designations and Values, p. 3.
• Added Fig. 12, Maximum Transient Thermal Impedance, p. 6
2
July 2008
• Added MTTF CW graph, Fig. 13, MTTF versus Junction Temperature, p. 6
3
Sept. 2008
• Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is
measured separately, p. 5
• Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect the correct die size and increased
the MTTF factor accordingly, p. 6
• Corrected Fig. 14, MTTF versus Junction Temperature – Pulsed, to reflect the correct die size and
increased the MTTF factor accordingly, p. 6
4
Dec. 2008
• Fig. 15, Series Equivalent Source and Load Impedance, corrected Zsource copy to read “Test circuit
impedance as measured from gate to gate, balanced configuration” and Zload copy to read “Test circuit
impedance as measured from drain to drain, balanced configuration”, p. 7
5
July 2009
• Added 1000 W CW thermal data at 100 MHz to Thermal Characteristics table, p. 1
• Changed “EKME630ELL471MK25S” part number to “MCGPR63V477M13X26--RH”, changed R1
Description from “1 KΩ, 1/4 W Axial Leaded Resistor” to “1 KΩ, 1/4 W Carbon Leaded Resistor” and
“CMF601000R0FKEK” part number to “MCCFR0W4J0102A50”, Table 5, Test Circuit Component
Designations and Values, p. 3
• Corrected Fig. 13, MTTF versus Junction Temperature – CW, to reflect change in Drain Efficiency from
70% to 72%, p. 6
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 20
6
Dec. 2009
• Device frequency range improved from 10--150 MHz to 1.8--150 MHz, p. 1
• Reporting of pulsed thermal data now shown using the ZθJC symbol, Table 2. Thermal Characteristics, p. 1
7
Apr. 2010
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
8
Sept. 2012
• Added part number MRF6VP11KGSR5, p. 1
• Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 10, 11
• Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD
class, p. 2
• Modified figure titles and/or graph axes labels to clarify application use, p. 5, 6
• Fig. 12, Transient Thermal Impedance: graph updated to show correct CW operation, p. 6
• Fig. 13, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match
maximum operating junction temperature, p. 6
• Fig. 14, MTTF versus Junction Temperature -- Pulsed removed, p. 6. Refer to the device’s MTTF
Calculator available at freescale.com/RFpower. Select Software & Tools/Development Tools/Calculators to
access MTTF calculators by product.
MRF6VP11KHR6 MRF6VP11KGSR5
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2008--2010, 2012 Freescale Semiconductor, Inc.
MRF6VP11KHR6 MRF6VP11KGSR5
Document
Number:
RF
Device
Data MRF6VP11KH
Rev. 8, 9/2012
Freescale
Semiconductor, Inc.
13
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