HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372. These IGBT’s are ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. These devices have been optimized for high frequency switch mode power supplies. Features • >100kHz Operation At 390V, 20A • 200kHz Operation At 390V, 12A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . . . .55ns at T J = 125 oC • Low Conduction Loss • Temperature Compensating SABER™ Model www.fairchildsemi.com Packaging JEDEC STYLE TO-247 E C G Formerly Developmental Type TA49341. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60A4D TO-247 20N60A4D HGT4E20N60A4DS TO-268 20N60A4DS TO-268AA NOTE: When ordering, use the entire part number. Symbol C C G G E E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 ©2002 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL HGTG20N60A4D, HGT4E20N60A4DS 600 UNITS V 70 40 280 ±20 ±30 100A at 600V 290 2.32 -55 to 150 260 A A A V V W W/oC oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. Electrical Specifications TJ = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) SYMBOL BVCES ICES VCE(SAT) VGE(TH) IGES TEST CONDITIONS IC = 250µA, VGE = 0V VCE = 600V IC = 20A, VGE = 15V MIN TYP MAX UNITS 600 - - V TJ = 25oC - - 250 µA TJ = 125oC - - 3.0 mA TJ = 25oC - 1.8 2.7 V TJ = 125oC IC = 250µA, VCE = 600V VGE = ±20V - 1.6 2.0 V 4.5 5.5 7.0 V - - ±250 nA 100 - - A SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH, VCE = 600V VGEP IC = 20A, VCE = 300V - 8.6 - V IC = 20A, VCE = 300V VGE = 15V - 142 162 nC VGE = 20V - 182 210 nC - 15 - ns - 12 - ns - 73 - ns - 32 - ns - 105 - µJ Qg(ON) td(ON)I trI td(OFF)I tfI EON1 IGBT and Diode at TJ = 25oC, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3Ω, L = 500µH, Test Circuit Figure 24 Turn-On Energy (Note 3) EON2 - 280 350 µJ Turn-Off Energy (Note 2) EOFF - 150 200 µJ - 15 21 ns - 13 18 ns - 105 135 ns - 55 73 ns EON1 - 115 - µJ Turn-On Energy (Note 3) EON2 - 510 600 µJ Turn-Off Energy (Note 2) EOFF - 330 500 µJ Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 3) ©2002 Fairchild Semiconductor Corporation td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 125oC, ICE = 20A, VCE = 390V, VGE = 15V, RG = 3Ω, L = 500µH, Test Circuit Figure 24 HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS Electrical Specifications TJ = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Diode Forward Voltage TEST CONDITIONS VEC Diode Reverse Recovery Time trr Thermal Resistance Junction To Case RθJC MIN TYP MAX UNITS IEC = 20A - 2.3 - V IEC = 20A, dIEC/dt = 200A/µs - 35 - ns IEC = 1A, dIEC/dt = 200A/µs - 26 - ns IGBT - - 0.43 oC/W Diode - - 1.9 oC/W NOTE: 2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. E ON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20. Unless Otherwise Specified DIE CAPABILITY VGE = 15V 80 PACKAGE LIMIT 60 40 20 0 25 50 75 100 125 150 120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 100 80 60 40 20 0 0 100 TC , CASE TEMPERATURE (oC) fMAX, OPERATING FREQUENCY (kHz) 500 TC VGE 75oC 15V 300 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) 100 fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES TJ = 125oC, RG = 3Ω, L = 500µH, V CE = 390V 5 10 20 30 40 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT ©2002 Fairchild Semiconductor Corporation 300 400 500 700 600 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 50 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 40 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 14 VCE = 390V, RG = 3Ω, TJ = 125oC 12 450 400 ISC 10 350 8 300 6 250 4 200 tSC 2 0 150 10 11 12 13 14 100 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 100 ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS 100 Unless Otherwise Specified (Continued) DUTY CYCLE < 0.5%, VGE = 12V PULSE DURATION = 250µs 80 60 40 TJ = 125oC 20 TJ = 25 oC TJ = 150oC 0 0.4 0 0.8 1.2 1.6 2.0 2.4 2.8 3.2 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 100 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250µs 80 60 40 TJ = 125oC 20 TJ = 150oC 0 0 FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1.2 1.6 2.0 2.4 2.8 800 RG = 3Ω, L = 500µH, VCE = 390V EOFF, TURN-OFF ENERGY LOSS (µJ) EON2 , TURN-ON ENERGY LOSS (µJ) 0.8 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE 1400 1200 1000 TJ = 125oC, VGE = 12V, VGE = 15V 800 600 400 200 TJ = 25oC, VGE = 12V, VGE = 15V 0 5 RG = 3Ω, L = 500µH, VCE = 390V 700 600 500 TJ = 125oC, VGE = 12V OR 15V 400 300 200 TJ = 25oC, VGE = 12V OR 15V 100 0 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) 5 40 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 36 22 RG = 3Ω, L = 500µH, VCE = 390V RG = 3Ω, L = 500µH, VCE = 390V 32 20 TJ = 25 oC, TJ = 125oC, VGE = 12V trI , RISE TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) 0.4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V) 18 16 14 12 TJ = 25oC, TJ = 125oC, VGE = 15V 10 8 TJ = 25oC TJ = 25oC, TJ = 125oC, VGE = 12V 28 24 20 16 12 TJ = 25oC OR TJ = 125oC, VGE = 15V 8 4 5 10 15 20 25 30 35 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT ©2002 Fairchild Semiconductor Corporation 40 5 10 15 20 25 30 35 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS Typical Performance Curves Unless Otherwise Specified (Continued) 80 RG = 3Ω, L = 500µH, VCE = 390V RG = 3Ω, L = 500µH, VCE = 390V 72 110 VGE = 12V, VGE = 15V, TJ = 125oC tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 120 100 90 80 TJ = 125oC, VGE = 12V OR 15V 56 48 TJ = 25oC, VGE = 12V OR 15V 40 32 VGE = 12V, VGE = 15V, TJ = 25 oC 70 60 64 24 5 10 15 20 25 30 35 16 40 5 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 16 240 DUTY CYCLE < 0.5%, VCE = 10V PULSE DURATION = 250µs 160 120 TJ = 25 oC 80 TJ = 125oC TJ = -55oC 40 30 35 40 IIG(REF) 1mA,RRLL==15Ω, 15Ω,TTJJ==25 25ooCC G(REF)==1mA, 14 12 VCE = 600V VCE = 400V 10 8 VCE = 200V 6 4 2 7 8 9 11 10 0 12 20 40 1.8 RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 1.4 1.2 I CE = 30A 0.8 I CE = 20A 0.6 0.4 I CE = 10A 0.2 0 25 50 75 100 125 TC , CASE TEMPERATURE (oC) FIGURE 15. TOTAL SWITCHING LOSS vs CASE TEMPERATURE ©2002 Fairchild Semiconductor Corporation 80 100 120 140 160 FIGURE 14. GATE CHARGE WAVEFORMS 150 ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) FIGURE 13. TRANSFER CHARACTERISTIC 1.0 60 QG , GATE CHARGE (nC) VGE, GATE TO EMITTER VOLTAGE (V) ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ) 25 0 0 6 1.6 20 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT VGE, GATE TO EMITTER VOLTAGE (V) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 15 ICE , COLLECTOR TO EMITTER CURRENT (A) TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V ETOTAL = EON2 + EOFF 10 ICE = 30A 1 ICE = 20A ICE = 10A 0.1 3 10 100 1000 RG, GATE RESISTANCE (Ω) FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS Unless Otherwise Specified (Continued) 5 FREQUENCY = 1MHz C, CAPACITANCE (nF) 4 3 CIES 2 1 COES CRES 0 0 20 40 60 80 100 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Typical Performance Curves 2.2 DUTY CYCLE < 0.5%, TJ = 25oC PULSE DURATION = 250µs 2.1 2.0 ICE = 30A ICE = 20A 1.9 1.8 1.7 ICE = 10A 8 9 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 11 13 12 14 15 FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE vs GATE TO EMITTER VOLTAGE 30 90 DUTY CYCLE < 0.5%, PULSE DURATION = 250µs dIEC/dt = 200A/µs 80 trr , RECOVERY TIMES (ns) 25 20 125oC 15 25oC 10 5 125 oC trr 70 125 oC tb 60 125oC ta 50 40 30 25oC trr 20 25oC ta 10 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 25 oC tb 4 0 8 IEC = 20A, VCE = 390V 40 125oC ta 30 125 oC tb 20 25oC ta 10 0 200 25 oC tb 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF CURRENT ©2002 Fairchild Semiconductor Corporation 20 FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT Qrr, REVERSE RECOVERY CHARGE (nC) FIGURE 19. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP 50 16 12 IEC , FORWARD CURRENT (A) VEC , FORWARD VOLTAGE (V) trr, RECOVERY TIMES (ns) 16 VGE, GATE TO EMITTER VOLTAGE (V) FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE IEC , FORWARD CURRENT (A) 10 800 VCE = 390V 125oC, IEC = 20A 600 125oC, I EC = 10A 400 25 oC, IEC = 20A 200 25 oC, IEC = 10A 0 200 300 400 500 600 700 800 900 1000 diEC/dt, RATE OF CHANGE OF CURRENT (A/µs) FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF CURRENT HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 10 0 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 t1 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-5 10 -4 10-3 10 -2 PD t2 10 -1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTG20N60A4D DIODE TA49372 90% 10% VGE EON2 EOFF L = 500µH VCE RG = 3Ω 90% DUT + - ICE VDD = 390V FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation 10% td(OFF)I tfI trI td(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG20N60A4D, HGT4E20N60A4DS Rev. C HGTG20N60A4D, HGT4E20N60A4DS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ©2002 Fairchild Semiconductor Corporation fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 25. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC. The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (P C) are approximated by PC = (VCE x ICE)/2. EON2 and E OFF are defined in the switching waveforms shown in Figure 25. E ON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). HGTG20N60A4D, HGT4E20N60A4DS Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST â FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC â OPTOPLANAR PACMAN POP Power247 PowerTrench â QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER â UHC SMART START UltraFET â SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H5