IRGP4078DPbF IRGP4078D-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM • Positive VCE (ON) Temperature co-efficient • Ultra-low VF Hyperfast Diode • Tight parameter distribution Package Type IRGP4078DPbF IRGP4078D-EPbF TO-247AC TO-247AD VCES = 600V INOMINAL = 50A TJ(MAX) = 175°C G VCE(ON) typ. = 1.9V E n-channel G G Benefits • Device optimized for induction heating and soft switching applications • High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI Base part number C C G E C G IRGP4078DPbF TO-247AC IRGP4078D-EP TO-247AD G Gate C Collector Standard Pack Form Quantity Tube Tube 25 25 E E Emitter Orderable Part Number IRGP4078DPbF IRGP4078D-EPbF Absolute Maximum Ratings Parameter Collector-to-Emitter Voltage VCES IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current Pulse Collector Current, VGE = 15V ICM ILM Clamped Inductive Load Current, VGE = 20V IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C IFRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and Storage Temperature Range TSTG Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw 1 www.irf.com © 2012 International Rectifier Max. 600 74 50 150 200 44 25 120 79 ±20 ±30 278 139 -55 to +175 Units V A V W °C 300 (0.063 in.(1.6mm) from case) 10 lbf·in (1.1 N·m) January 8, 2013 IRGP4078DPbF/EP Thermal Resistance RθJC RθJC RθCS RθJA Parameter (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) (Diode) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — 0.45 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage — 1.9 — 2.5 — 2.6 Gate Threshold Voltage 4.0 — VGE(th) gfe Forward Transconductance — 26 ICES Collector-to-Emitter Leakage Current — 1.0 — 600 Diode Forward Voltage Drop — 1.17 VFM — 1.06 IGES Gate-to-Emitter Leakage Current — — Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge (turn-on) — 61 Gate-to-Emitter Charge (turn-on) — 20 Qge Qgc Gate-to-Collector Charge (turn-on) — 22 Eoff Turn-Off Switching Loss — 1.1 Min. ––– ––– ––– ––– Units °C/W Units Conditions V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 1mA (25°C-175°C) V IC = 50A, VGE = 15V, TJ = 25°C IC = 50A, VGE = 15V, TJ = 150°C IC = 50A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.0mA S VCE = 50V, IC = 50A, PW = 20µs µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C V IF = 25A IF = 25A, TJ = 175°C nA VGE = ±20V Max. 92 30 33 1.4 Units ns Turn-Off delay time Fall time Turn-Off Switching Loss — — — 116 33 1.5 — — — td(off) tf Cies Coes Cres Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — — 113 54 2105 131 59 — — — — — RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area nC mJ mJ ns pF FULL SQUARE — Max. 0.54 2.55 ––– 40 Max. — — 2.2 — — 6.5 — 80 — 1.30 — ±100 td(off) tf Eoff 5 Typ. ––– ––– 0.24 ––– — µs Conditions IC = 50A VGE = 15V VCC = 300V IC = 50A, VCC = 400V, VGE = 15V RG = 10, L = 210µH, TJ = 25°C Energy losses include tail & diode reverse recovery IC = 50A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175°C, IC = 200A VCC = 480V, Vp ≤ 600V Rg = 10, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V Rg = 10, VGE = +15V to 0V Notes: VCC = 80% (VCES), VGE = 20V, L = 23µH, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. fsw = 20KHz, refer to figure 19. R is measured at TJ of approximately 90°C. Sinusoidal half wave, t = 10ms. 2 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP 300 80 250 60 Ptot (W) IC (A) 200 40 150 100 20 50 0 0 25 50 75 100 125 150 25 175 50 75 100 125 150 175 TC (°C) TC (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 1000 200 V GE = 18V V GE = 15V V GE = 12V 150 V GE = 10V IC (A) ICE (A) 100 V GE = 8.0V 100 10 50 1 0 10 100 1000 0 6 8 10 V CE (V) Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE = 20V Fig. 4 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 20µs 200 V GE = 18V V GE = 18V V GE = 15V V GE = 15V 150 V GE = 12V 150 V GE = 12V V GE = 10V V GE = 10V V GE = 8.0V ICE (A) ICE (A) 4 V CE (V) 200 100 V GE = 8.0V 100 50 50 0 0 0 2 4 6 8 10 V CE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs 3 2 www.irf.com © 2012 International Rectifier 0 2 4 6 8 10 V CE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 20µs January 8, 2013 IRGP4078DPbF/EP 12 1000 10 8 IF (A) V CE (V) 100 10 ICE = 25A ICE = 50A 6 ICE = 100A 4 -40°C 25°C 175°C 2 0 1 0.0 1.0 2.0 5 3.0 10 VF (V) 12 12 10 10 V CE (V) V CE (V) ICE = 25A ICE = 50A 8 ICE = 25A ICE = 50A 6 ICE = 100A ICE = 100A 6 4 4 2 2 0 0 5 10 15 20 5 10 V GE (V) 15 20 V GE (V) Fig. 10 - Typical VCE vs. VGE TJ = 175°C Fig. 9 - Typical VCE vs. VGE TJ = 25°C 5000 350 300 4000 250 EOFF TJ = 25°C Energy (µJ) ICE (A) 20 Fig. 8 - Typical VCE vs. VGE TJ = -40°C Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics 8 15 V GE (V) 200 150 100 TJ = 175°C 3000 2000 1000 50 0 0 4 6 8 10 12 14 16 18 20 V GE (V) Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs 4 www.irf.com © 2012 International Rectifier 10 20 30 40 50 60 70 80 90 100 IC (A) Fig. 12 - Typ. Energy Loss vs. IC TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V January 8, 2013 IRGP4078DPbF/EP 5000 1000 EOFF tdOFF Energy (µJ) Swiching Time (ns) 4000 100 tF 3000 2000 1000 10 0 20 40 60 80 0 100 20 40 60 80 100 IC (A) Rg () Fig. 13 - Typ. Switching Time vs. IC TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V Fig. 14 - Typ. Energy Loss vs. RG TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V 1000 350 20 Tsc Time (µs) 100 tF 10 0 20 40 60 80 16 280 12 210 8 140 4 70 100 8 10 12 RG ( ) 16 18 Fig. 16 - VGE vs. Short Circuit VCC = 400V; TC = 25°C 16 V GE, Gate-to-Emitter Voltage (V) 10000 Cies Capacitance (pF) 14 VGE (V) Fig. 15 - Typ. Switching Time vs. RG TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V 1000 100 Coes Cres 14 V CES = 400V 12 V CES = 300V 10 8 6 4 2 0 10 0 5 Isc Current (A) Swiching Time (ns) tdOFF 100 200 300 400 500 0 10 20 30 40 50 60 70 V CE (V) Q G, Total Gate Charge (nC) Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 18 - Typical Gate Charge vs. VGE ICE = 50A www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP D= 0.1 120 Repetitive Peak Current (A) V GE(th), Gate Threshold Voltage (Normalized) 140 100 D= 0.2 80 60 Square Pulse, f = 20KHz D = t/T 40 D= 0.5 20 t T = 50us 0 25 50 75 100 125 150 6.0 IC = 1.0mA 5.0 4.0 3.0 2.0 25 175 50 75 100 125 150 175 TJ , Temperature (°C) Case Temperature (°C) Fig. 20 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature Fig. 19 - Maximum Diode Repetitive Forward Peak Current vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J R1 R1 J 1 0.02 0.01 0.01 R2 R2 R3 R3 R4 R4 C 2 1 3 2 4 3 4 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C 1E-005 Ri (°C/W) i (sec) 0.011823 0.000009 0.150739 0.000142 0.223153 0.002294 0.153695 0.014121 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 4 C Ri (°C/W) i (sec) 0.073136 0.000027 0.471726 0.000218 1.318881 0.002656 0.686257 0.026124 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 6 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP L L 80 V + VCC DUT 0 - 1K DUT VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit 4X DC VCC DUT Fig.C.T.4 - Switching Loss Circuit Fig.C.T.3 - S.C. SOA Circuit C force 100K D1 22K C sense G force DUT 0.0075µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 7 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP 60 500 500 tf 500 VCE 50 400 40 30 200 20 5% VCE 100 Eoff Loss -0.5 2 -10 4.5 7 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 8 www.irf.com 300 300 200 200 ICE 100 10 0 -3 400 100 10% ICE 0 -100 Vce (V) 300 ICE (A) VCE (V) 90% ICE 400 Ice (A) 600 © 2012 International Rectifier 0 0 -100 -100 -5 0 5 10 time (µs) Fig. WF2 - Typ. S.C. Waveform @ TJ = 25°C using Fig. CT.3 January 8, 2013 IRGP4078DPbF/EP TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM BLED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F r e e " PART NUM BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM BLY LO T CO DE DATE CO D E YEAR 0 = 2000 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2012 International Rectifier January 8, 2013 IRGP4078DPbF/EP Qualification Information† Industrial† Qualification Level Moisture Sensitivity Level TO-247AC (per JEDEC JESD47F) †† N/A TO-247AD N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2012 International Rectifier January 8, 2013