NJSEMI BUV26 Switchmode series npn silicon power transistor Datasheet

'J.E.iis.u
, One.
O'
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BUV26
Switchmode Series NPN
Silicon Power Transistor
Designed for high-speed applications,
Features
• Switchmode Power Supplies
• High Frequency Converters
12 AMPERES
NPN SILICON
POWER TRANSISTORS
90 VOLTS, 85 WATTS
• Relay Drivers
• Driver
MAXIMUM RATINGS (Tj = 25°C unless otherwise noted)
Symbol
Value
Unit
VCEO(sus)
90
Vdc
VCBO
180
Vdc
VEBO
7.0
Vdc
Collector Current - Continuous
-Peak (pw 10 ms)
Ic
ICM
20
30
Adc
Apk
Base Current - Continuous
IB
'BM
4.0
6.0
Adc
Adc
Total Power Dissipation @ TC = 25°C
Total Power Dissipation @ TC = 60°C
PD
PD
85
65
W
W
Tj. Tstg
-6510+175
°c
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Symbol
Max
Unit
RSJC
1.76
°C/W
MARKING
DIAGRAM
TO-220AB
CASE 221A
STYLE 1
BUV26
A
Y
WW
= Device Code
= Assembly Location
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
BUV26
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
90
-
-
1.0
7.0
30
-
1.0
-
3.0
-
0.6
1.5
-
2.0
-
0.6
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(lc = 200 mA, IB = 0, L = 25 mH)
Collector Cutoff Current at Reverse Bias
(VCE = 180 V, VBE = -1.5 V, Tc = 125°C)
Vdc
vCEO(sus)
mAdc
'CEX
Emitter Base Reverse Voltage
(IE = 50 mA)
VEBO
Emitter Cutoff Current
(VEB = 5.0 V)
IEBO
Collector Cutoff Current
(VCE = 180 V, RBEE = 50 fi, Tc = 125°C)
ICER
V
mAdc
mAdc
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(lc = 6.0 A, IB = 0.4 A)
(lc = 12 A, IB =1.2 A)
vCE(sat)
Base-Emitter Saturation Voltage
(lc = 12 A, IB = 1.2 A)
VsE(sat)
Vdc
Vdc
SWITCHING CHARACTERISTICS (Resistive Load)
Turn On Time
l c = 12 A, IB = 1.2 A
Storage Time
Vcc = 50 V, VBE = 6.0 V
ts
-
1.0
Fall Time
RB2 = 2.5 Q
tf
-
0.15
Ts
-
2.0
Tf
-
.15
ton
US
SWITCHING CHARACTERISTICS (Inductive Load)
Storage Time
Fall Time
VCC = 50V, I C = 1 2 A
I'B(end)
r-!/ .« 1\.£.i\,
*> A \/n
^ n v\
vg o.u
LB = 0.5pH, Tj = 125°C
1. Pulse Test: Pulse width s 300 |is; Duty cycle s 2%.
US
BUV26
TYPICAL CHARACTERISTICS
180
10
Figure 2. Collector-Emitter Saturation Voltage
A
O NJ
.'•
~rn
CO
O
CD
—r
•V
•^ •^
:--
r
/
100
=—
...
^
..-=d^k
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- 10O m 5e
<£
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tf t
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^-^* ^^ s 9
- 2 5 3 S - ^0 »• ; = •
F=
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1753u
100
Figure 1. DC Current Gain
/-(-«.
1 ^n<f '
10
lc, COLLECTOR CURRENT (A)
1—I—I I I IC/IB= 10
K
1
lc, COLLECTOR CURRENT (mA)
^^ ^
3O O
J ^b.
(sat),
BASE-EMIT SATU RATION
VOLTAGE (V)
0.1
LU
10
-X-
CE
^v
O
DC
--•
^
1
R0
.~ '
^
LU
0 0.1
o
"
s^
.ii: =^=
=E :=
Is s
^=
0
m
nm
0.1
1
10
100
1
10
100
lc, COLLECTOR CURRENT (A)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Safe Operating Area
TO-220
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