Diodes DMN3300U-7 N-channel enhancement mode field effect transistor Datasheet

DMN3300U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Please click here to visit our online spice models database.
Features
NEW PROD UCT
•
•
•
•
•
•
Mechanical Data
•
•
Low On-Resistance
•
150 mΩ @VGS = 4.5V
•
200 mΩ @VGS = 2.5V
•
240 mΩ @VGS = 1.8V
•
300 mΩ @VGS = 1.5V
Ultra Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 5)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
•
•
•
•
•
•
SOT-23
D
G
Maximum Ratings
S
TOP VIEW
Internal Schematic
TOP VIEW
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Symbol
VDSS
VGSS
ID
IDM
Value
30
±12
2.0
8
Units
V
V
A
A
Symbol
PD
RθJA
TJ, TSTG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
1.
2.
3.
4.
5.
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
IGSS
30
⎯
⎯
37
⎯
⎯
⎯
1
±10
V
μA
μA
VGS = 0V, ID = 100μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.5
⎯
1
V
RDS (ON)
⎯
100
140
185
240
150
200
250
300
mΩ
|Yfs|
VSD
⎯
⎯
5
0.8
⎯
1.1
S
V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 1.5A
VGS = 1.5V, ID = 0.5A
VDS =5V, ID = 2.4A
VGS = 0V, I = 0.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
193
35
23
7
24
24
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
ns
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
Device mounted on FR-4 PCB.
No purposefully added lead. Halogen and Antimony Free.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
DMN3300U
Document number: DS31181 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN3300U
8
10
VDS = 5V
Pulsed
7
ID, DRAIN CURRENT (A)
8
NEW PRODUCT
6
4
6
5
TA = 150°C
TA = 125°C
4
T A = 85°C
3
2
2
1
0
TA = 25°C
TA = -55°C
0
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
1
2.0
RDS(ON), STATIC DRAIN-SOURCE
ON-RESISTANCE (Ω)
1.8
1.6
VGS = 1.5V
1.4
1.2
VGS = 2.5V
0.1
1.0
VGS = 4.5V
0.8
0.6
0.4
0.2
0
0.01
0.01
0.1
1
10
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0.8
ID = 250µA
C, CAPACITANCE (pF)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.0
0.6
0.4
Ciss
0.2
Coss
Crss
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
DMN3300U
Document number: DS31181 Rev. 4 - 2
2 of 4
www.diodes.com
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
30
June 2008
© Diodes Incorporated
DMN3300U
10
IS, SOURCE CURRENT (A)
TA = 150°C
0.1
TA = 125°C
TA = 85°C
0.01
TA = 25°C
TA = -55°C
0.001
0.0001
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
Ordering Information
(Note 6)
Part Number
DMN3300U-7
Notes:
Case
SOT-23
Packaging
3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
33N
Date Code Key (If Applicable)
Year
2007
Code
U
Month
Code
Jan
1
YM
NEW PRODUCT
1
33N = Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2008
V
Feb
2
Mar
3
2009
W
Apr
4
May
5
2010
X
Jun
6
Jul
7
2011
Y
Aug
8
Sep
9
2012
Z
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
SOT-23
A
D
B
C
G TOP VIEW S
E
D
G
H
K
J
M
L
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
0°
8°
All Dimensions in mm
DMN3300U
Document number: DS31181 Rev. 4 - 2
3 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN3300U
Suggested Pad Layout
Y
NEW PRODUCT
Z
G
C
X
E
Dimensions Value (in mm)
Z
3.4
G
0.7
X
0.9
Y
1.4
C
2.0
E
0.9
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN3300U
Document number: DS31181 Rev. 4 - 2
4 of 4
www.diodes.com
June 2008
© Diodes Incorporated
Similar pages