DAN217 SOT-23 Plastic-Encapsulate Diodes Switching Diodes Features ● Small surface mounting type SOT- 23 ● Two diode elements are connected in series 3 Applications ● Extreme fast switches 2 1 1 Marking: 3 ● BA1 2 Symbol Limit Unit VRM 80 V DC Blocking Voltage VR 80 V Forward Continuous Current IFM 300 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Average Rectified Output Current IO 100 mA Power Dissipation PD 200 mW RθJA 625 ℃/W TJ 150 ℃ TSTG -55~+150 ℃ Parameter Non-Repetitive Peak Reverse Voltage Thermal resistance From Junction to ambient Junction Temperature Storage Temperature Range Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Test conditions Min Max Unit V(BR) IR= 100μA Reversen voltage leakage current IR VR=70V 0.1 μA Forward voltage VF IF=100mA 1.2 V Reverse breakdown voltage 80 High Diode Semiconductor V 1 Typical Characteristics Forward 100 Characteristics (nA) (mA) Ta =2 5℃ 3 REVERSE CURRENT IR 10 Ta =1 00 ℃ IF Characteristics 300 30 FORWARD CURRENT Reverse 1000 1 Ta=100℃ 100 30 Ta=25℃ 10 3 0.3 0.1 0.0 1 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1.0 1.2 0 REVERSE VOLTAGE Capacitance Characteristics 1.6 40 20 (V) 60 VR 80 (V) Power Derating Curve 300 Ta=25℃ f=1MHz (mW) PD 1.4 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 250 1.2 200 150 100 50 0 1.0 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 125 100 Ta 150 (℃) 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4