AO3401 P-Channel Enhancement Mode Field Effect Transistor Features TO-236 (SOT-23) VDS (V) = -30V ID = -4.2 A (V GS = -10V) RDS(ON) < 50m Ω (VGS = -10V) RDS(ON) < 65m Ω (VGS = -4.5V) RDS(ON) < 120m Ω (VGS = -2.5V) D G D S G S General Description The AO3401 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Standard product KSM3401 is Pb-free (meets ROHS & Sony 259 specifications). KSM3401L is a Green Product ordering option. KSM3401 and KSM3401L are electrically identical. Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Junction and Storage Temperature Range 2014-5-24 A A 1.4 W 1 TJ, TSTG °C -55 to 150 Symbol A V -30 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead ±12 -3.5 ID IDM TA=25°C Power Dissipation Units V -4.2 Pulsed Drain Current B A Maximum -30 t ≤ 10s Steady-State Steady-State RθJA RθJL 1 Typ 65 85 43 Max 90 125 60 Units °C/W °C/W °C/W www.kersemi.com KSM3401 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage On state drain current VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V ID(ON) -0.7 -25 gFS VSD IS VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-1A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz Crss Rg VGS=0V, VDS=0V, f=1MHz Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge µA ±100 nA -1 -1.3 V A 42 50 75 65 120 mΩ -1 -2.2 S V A VGS=-4.5V, VDS=-15V, ID=-4A VGS=-10V, VDS=-15V, RL=3.6Ω, RGEN=6Ω IF=-4A, dI/dt=100A/µs IF=-4A, dI/dt=100A/µs 53 80 7 Units V TJ=125°C Static Drain-Source On-Resistance Max -1 -5 TJ=55°C VGS=-10V, ID=-4.2A RDS(ON) Typ 11 -0.75 mΩ mΩ 954 115 77 6 pF pF pF Ω 9.4 2 3 6.3 3.2 38.2 12 20.2 11.2 nC nC nC ns ns ns ns ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. 2014-5-24 2 www.kersemi.com KSM3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 25.00 -10V VDS=-5V -4.5V 20.00 8 15.00 -ID(A) -ID (A) -3V -2.5V 10.00 VGS=-2V 5.00 0.00 0.00 6 125°C 4 25°C 2 0 1.00 2.00 3.00 4.00 5.00 0 0.5 120 Normalized On-Resistance RDS(ON) (mΩ) 1.5 2 2.5 3 1.8 100 80 VGS=-2.5V VGS=-4.5V 60 40 VGS=-10V 20 0.00 ID=-3.5A, VGS=-4.5V 1.6 ID=-3.5A, VGS=-10V 1.4 VGS=-2.5V 1.2 ID=-1A 1 0.8 2.00 4.00 6.00 8.00 10.00 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 190 1.0E+01 170 1.0E+00 150 ID=-2A 130 1.0E-01 -IS (A) RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 110 90 125°C 70 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 30 1.0E-06 10 0 2 4 6 8 0.0 10 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 2014-5-24 0.2 3 www.kersemi.com KSM3401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-15V ID=-4A 3 2 1 1000 Ciss 800 600 400 Coss 200 0 0 2 4 6 8 10 0 12 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 1.0 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 1ms 10ms 20 10 1s 10s DC 0.1 1 10 0 0.001 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) ZθJA Normalized Transient Thermal Resistance 15 10µs 0.1s 10 10 40 RDS(ON) 10.0 limited 0.1 5 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 2014-5-24 4 www.kersemi.com