MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,25V BSB008NE2LX DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,25V BSB008NE2LX 1Description CanPAKMX-size Features •Optimizedfore-fuseandOR-ingapplication •UltralowRdsoninCanPAK-MXfootprint •Lowprofile(<0.7mm) •100%avalanchetested •100%RgTested •Double-sidedcooling •CompatiblewithDirectFET®packageMXfootprintandoutline1) •QualifiedaccordingtoJEDEC2)fortargetapplications Table1KeyPerformanceParameters Unit VDS 25 V RDS(on),max 0.8 mΩ ID 180 A Qoss 74 nC Qg(0V..10V) 258 nC Type/OrderingCode Package BSB008NE2LX MG-WDSON-2 Gate Source Marking 04E2 Drain Value Drain Parameter RelatedLinks - 1) CanPAKTM uses DirectFET ® technology licensed from International Rectifier Corporation. DirectFET® is a registered trademark of International Rectifier Corporation. 2) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 180 165 46 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=45K/W - 400 A TC=25°C - - 40 A TC=25°C EAS - - 600 mJ ID=40A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 89 2.8 W TC=25°C TA=25°C,RthJA=45K/W Operating and storage temperature Tj,Tstg -40 - 150 °C IEC climatic category; DIN IEC 68-1: 40/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Pulsed drain current1) 2) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 1.0 - K/W - Thermal resistance, junction - case, top RthJC - - 1.4 K/W - Device on PCB, 6 cm2 cooling area3) RthJA - - 45 K/W - 1) See figure 3 for more detailed information See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 4 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 10 100 µA VDS=25V,VGS=0V,Tj=25°C VDS=25V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.75 0.6 1.0 0.8 mΩ VGS=4.5V,ID=25A VGS=10V,ID=30A Gate resistance RG 0.3 0.5 1.0 Ω - Transconductance gfs 120 240 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 12000 16000 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 3800 5100 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 3300 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 12.6 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 47.2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 75 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 32.4 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 27 36 nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 19 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 73 110 nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 81 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 146 194 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.2 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 258 343 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 88 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 74 98 nC VDD=12V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 89 A TC=25°C - 400 A TC=25°C - 0.78 - V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 6 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 200 90 80 160 70 120 ID[A] Ptot[W] 60 50 40 80 30 20 40 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 µs 100 1 ms 0.2 ZthJC[K/W] 10 ms 101 DC ID[A] 0.5 0 10 0.1 10-1 0.05 0.02 0.01 10-2 single pulse -1 10 10-2 10-1 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Diagram5:Typ.outputcharacteristics 800 Diagram6:Typ.drain-sourceonresistance 1.5 10 V 5V 700 4.5 V 3.2 V 4V 600 3.2 V 1.0 3.5 V RDS(on)[mΩ] ID[A] 500 3V 400 300 4V 4.5 V 5V 7V 10 V 0.5 2.8 V 200 100 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 600 500 320 400 ID[A] gfs[S] 240 160 300 150 °C 200 25 °C 80 0 100 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 8 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 2.5 1.2 2.0 1.0 1.5 VGS(th)[V] RDS(on)[mΩ] 0.8 typ 0.6 1.0 0.4 0.5 0.2 0.0 -40 -20 0 20 40 60 80 100 120 140 0.0 -40 160 -20 0 20 40 Tj[°C] 60 80 100 120 140 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 5 103 10 25 °C 150 °C Ciss 102 C[pF] 104 IF[A] Coss Crss 103 102 101 0 5 10 15 20 25 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 9 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 10 9 8 5V 12 V 7 25 °C 20 V 6 125 °C VGS[V] IAV[A] 100 °C 101 5 4 3 2 1 100 100 101 102 103 0 0 50 tAV[µs] 100 150 200 250 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 10 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX 6PackageOutlines Figure1OutlineMG-WDSON-2,dimensionsinmm/inches Final Data Sheet 11 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Figure2OutlineTapeCanPAKMX,dimensionsinmm Final Data Sheet 12 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX Figure3OutlineBoardpadsandaperturesCanPAKMX,dimensionsinmm Final Data Sheet 13 Rev.2.0,2015-01-20 OptiMOSTMPower-MOSFET,25V BSB008NE2LX RevisionHistory BSB008NE2LX Revision:2015-01-20,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-01-20 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.0,2015-01-20