, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
REPETITIVE AVALANCHE AND dv/dt RATED*
IM-CHAIMNEL
400 Volt, 1.8 Ohm HEXFET
TO-220AB Plastic Package
Product Summary
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
CASE STYLE AND DIMENSIONS
i
Part Number
BVDSS
IRF720
400V
T -
f
13.97 (0.550)
MAX.
1
•fT
1
•
350V
1.80
3.3A
IRF722
400V
2.50
2.8A
(RF723 '
350V
2.5(1
2.8A
t
T
1
}
••
I
r
_ I054I0.4ISI _. T E K M 4 10.29 (0 4dil " 0(I»IN
3.71 10.1491 „,.
3 54 10.1391 u"
IT0
|
I2ZI0041)
648I025SJ
fiTioTfl
^
TERM 1 - G A T E ,
1.1 (045)MIN.
—i j-*—
43ZfO.UO)
3MIHISSI
3 44 |S HOI
139!
13.4!
iI
TERM3 -SOURCE
TERM 2 - D » A I N
UM- OS941
15.09 (0.594)
MAX.
i
3.3A
IRF721
2.1! 10 1131
2(210.103)
MAX.
r
"D
1.8Q
FEATURES:
•
Repetitive Avalanche Ratings
•
Dynamic dv/dt Rating
• Simple Drive Requirements
•
Ease of Paralleling
10.54 (0.415)
~~
RDS(on)
1SSO)
||
2.79(0.110)
?»(OMQ)
i
|
J
V-
\
\/ (0.160)
I Am *
ll\ \
1
1
IBI 210)
* 8 3 ( '190)
I
osioi
\
^SECTION X-X
SI!SrH
0939(
037}
Co* Styl. TO-220AB
Oimeniioni in Millimeters and llnchn)
•This data sheet applies to product with batch codes that begin with a digit, a. 2A3B
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished h> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
IRF720, IRF721, IRF722, IRF723 Devices
Absolute Maximum Ratings
IRF720, IRF721
IRF722. IRR23
Continuous Drain Current
3.3
2.8
ID ® TC " 100°C
Continuous Drain Current
2.1
IOM
Pulsed Drain Current (0
13
Parameter
ID ® TC ™
PO @ ^C
=
25°C
25°C
.
.
1.8
Units
A
.
-
-
11
Max. Fbwer Dissipation
60
A
A
'
W
VWK®
Linear Derating Factor
0.40
VQS
Gate-to-Source Voltage
±20
V
EAS
Single Pulsa Avalanche Energy <S>
190
{See Fig. 14)
mj
I AR
Avalanche Current ©
(Repetitive or Non-Repetitive)
3.3
(See EAR)
A
EAR
Repetitive Avalanche Energy CD
5.0
(See IAR)
mj
Jv/ctt
- Peak Diode Recovery rfv/dt 0)
4.0
(See Rg. 17)
Vfns
Tj
TSTG
Operating Junction
Storage Temperature Range
-66 to 150
°C
300 (0.063 In. 0.6mm) from case lor 10s)
°C
Lead Temperature
Electrical Characteristics @ T, = 25°C (Unless Otherwise Specified)
Parameter
BVoss
Drain-to-Source Breakdown voltage
Fine/nut Static Drain-to-Source
On-State Resistance 9)
'Dion)
On-State Drain Current ®
Type
Win.
IRF720
IRF722
400
Typ.
Max.
Units
IRF721
IRF723
350
-
-
V
vGS - ov, iD - 250 ^A
IRF720
IRF72I
-
1.6
1.8
0
vGS - iov, iD = I.SA
IRF722
IRF723
-
1.8
2.5
IRR20
IRR21
3.3
-
-
A
VDS > bton) x "DSIon) Max.
IRF722
IRF723
2.B
-
4.0
V
2.7
-
SID)
VDS = VGS. 'D - ZS<VA
IDS = i.8A, VDS a wv
VGS(th) Gate Threshold Voltage
ALL
2.0
gfs
Forward Transconductance ®
ALL
1.8
'DSS
Ze[0
Gate voltagu Drain Current
ALL
-
-
250
—
—
1000
liA
Test Conditions
VGS = 10V
VOS = Max. Rating, VQS = OV
Vrjs ~ 0.8 X Max Rating
VCS - OV, Tj - 125°C
1GSS
Gate-to-Source Leakage Forward
ALL
-
-
500
nA
VQS = 2°V
IQSS
Gate-to-Source Leakage Reverse
ALL
-
-
-500
nA
VGS =
Qg
Total Gate Charge
ALL
-
13
20
nC
VGS - 1"v. ID -
QgS
Gate-to-Source Charge
ALL
-
2.2
3.3
nC
-20V
3 3A
VQS * 0.8 x Max. Rating
See Rg. 16
(Independent of operating temperature)
Qgd
Gate-to-Draln ("Mlller'1 Charge
-
7.2
11
nC
'dtonl
Turn-On Delay Time
ALL
-
10
15
ns
t,
Rise Time
ALL
-
14
21
ns
vDD = 2oov, iD - 3.3A, RG = ien
RD = sen
'd(off)
Turn-Off Delay Time
ALL
-
30
45
ns
Ses Rg. 15
t|
Fall Time
ALL
-
13
20
ns
(Independent of operating temperature)
Lrj
Internal Drain Inductance
ALL
4.5
nH
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Lg
Internal Source Inductance
ALL
7.6
nH
Measuredfromthe source
lead, 6mm 10.25 in.) from
package to source bonding
Cjgg
Input Capacitance
ALL
-
350
-
PF
VGS = "« VDS -
C OS3
Output Capacitance
ALL
-
64
--
pF
f = 1.0 MHi
Crss
Reverse Transfer Capacitance
ALL
-
8.1
-
pF
See Fig. 10
25V
Modified MOSFET symbol
showing the internal
inductances.
~—It
/ itl i
i , IT...
\ KT
IRF720, IRF721, IRF722, IRF723 Devices
Source-Drain Diode Ratings and Characteristics
Parameter
Type
Mm.
Typ,
Max.
Units
Ic
Continuous Source Current
(Body Diodel
ALL
-
-
3.3
A
ISM
Pulsed Source Current
(Body Diodel (D
AU
~
~
13
A
Vsp
Diode Forward Vfaltage ®
ALL
-
-
1.6
V
Tj = 25°C, ls = 3.3A. VGS = 0V
t,,
Reverse Recovery Time
ALL
120
270
600
ns
Tj - 2S°C, IF - 3.3A. <i\Ul = 100 A/,a
OpR
Reverse Recovery Charge
ALL
0.64
1.4
3.0
fC
ton
Forward Turn-On Time
ALL
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS t LQ.
Test Conditions
Modified MOSFET symbol showing the integre)
Reverse p-n junction icctifier.
-~-—3t
Thermal Resistance
RtnJC
JuncUon-to-Csse
ALL
-
-
2.5
RlhCS
Case-to-SInk
ALL
-
0.50
-
K/W®
IOW®
Mounting surface fiat, smooth, and greased
RthjA
Junction-to-Ambient
ALL
-
-
30
KW®
Typical socket mount
Typical SPICE Computer Model Parameters (For More Information See Application Note AN-975)
Device
Level.
SPICE
MOSFET
Model
W(m),
Channel
Width
Llpm),
Channel
Length
Theta (1M,
Mobility
Modulation
UO (CM2/V-S),
Surface
Mobility
VTOCV),
Threshold
Voltage
R1 (D),
Drain
Resistance
R2(Q),
Source
Resistance
RG ID).
Gate
Resistance
ALL
3
0.279
1.2
0.30
450
4.00
1.4
0.02
1.5
CGSO (pfl.
GateSource
Capacitance
CGD(F)
GateDrain
Capacitance
E1 (V),
Voltage Dependent
Voltage Source
LO InH),
Drain
Inductance
LS(nH),
Source
Inductance
LGInH),
Gate
Inductance
HIM,
Diode
Saturation
Current
RSIO),
Diode
Bulk
Resistance
770
ca
2 + 0.995 VDQ
4.5
7.6
7.6
3.6 x 10'13
0.026
C8 = 1500 pf + 1.8 x 10-22 (VQt;)48
0>
Repetitive Rating; Pulse width limited by
maximum function temperature (see figure 5)
Refer to current HEXFET reliability report
®
0 VDD • BOV. Starting Tj - 26°C,
L - 31 mH.RQ = 250,
Peak IL - 3.3A.
01 ISD s 3.3A, d/dt £ 66A/M3,
VOD =i 8VDSS, Tj i 160°C
Suggested RQ - 180
®
K/W = °C/W
W/K - W/°C
Pulse width s 300 ia; Duty Cycle s 2%
Vnc
80HS PULSE TEST
6.0V—i
z E 0V
80pl. PUL si-
•^
/( [
T , =
Fig. 1 — Typical Output Characteristics
J4
isc °c ' / r i - 25
y 1i
/\
0(
/
0.1
V6S=5.0VJ
0
^
a
s
•4.5VA nv
40
80
ISO
160
200
VDS. DRAIN-TO-SQUHCE VOLTAGE (VOLTS)
j/
ESJ
10-2
I
g
/'/ i// =
' /
j 1
ti
)
i
t
Vss. GATE-TO-SOURCE VOLTAGE (VOLTS)
Fig. 2— Typical Transfer Characteristics
1(