ON MBRD1045G Switch-mode schottky power rectifier Datasheet

MBRB1045G,
MBRD1045G,
SBRB1045G,
SBRD81045T4G
Switch-mode
Schottky Power Rectifier
www.onsemi.com
Surface Mount Power Package
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
1
4
3
Features
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
SBRB and SBRD8 Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams for D2PAK (approximately)
MARKING DIAGRAM
4
MBRB1045G
AKA
1
3
D2PAK
CASE 418B
A
Y
WW
MBRB1045
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
0.4 grams for DPAK (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
AY WW
4
1 2
3
DPAK
CASE 369C
Y
WW
B1045
G
MARKING DIAGRAM
YWW
B10
45G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 9
1
Publication Order Number:
MBRB1045/D
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
45
V
Average Rectified Forward Current (Rated VR) TC = 135°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 135°C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
(MBRB/SBRB)
70
(MBRD/SBRD)
TJ, Tstg
−65 to +175
°C
dv/dt
10000
V/ms
A
20
Operating Junction and Storage Temperature Range (Note 1)
Voltage Rate of Change (Rated VR)
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
°C/W
Thermal Resistance,
(MBRB1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
(MBRD1045G)
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
RqJC
RqJA
1.0
50
RqJC
RqJA
2.43
68
Symbol
Value
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 10 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR
Unit
V
0.57
0.72
0.84
mA
15
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Device
Package
MBRB1045G
SBRB1045G
MBRB1045T4G
50 Units / Rail
D2PAK
(Pb−Free)
SBRB1045T4G
SBRD81045T4G
50 Units / Rail
800 Units / Tape & Reel
800 Units / Tape & Reel
MBRD1045G
MBRD1045T4G
Shipping†
50 Units / Rail
DPAK
(Pb−Free)
SSBRD81045T4G
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
2,500 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
100
100
TJ = 150°C
TJ = 150°C
70
70
100°C
25°C
100°C
50
25°C
30
30
20
20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
50
10
7.0
5.0
3.0
2.0
1.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.7
0.5
0.5
0.3
0.3
0.2
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.2
1.0
1.4
0.2
0.4
0.6
0.8
1.2
1.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
100
100
IR , REVERSE CURRENT (mA)
TJ = 150°C
IR , REVERSE CURRENT (mA)
1.4
125°C
10
100°C
1.0
75°C
0.1
25°C
150°C
10
125°C
1.0
100°C
75°C
0.1
0.01
0.01
25°C
0.001
0.001
0
5.0
10
15
20
25
30
35
40
45
0
50
5.0
10
15
20
25
30
35
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
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3
45
50
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
1400
C, CAPACITANCE (pF)
1200
100
70
50
30
800
600
400
200
0
20
1.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
1000
2.0
3.0
5.0 7.0 10
20
30
50
0
70 100
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Maximum Surge Capability
Figure 5. Typical Capacitance
18
RATED VOLTAGE APPLIED
16
14
dc
12
SQUARE
WAVE
10
8.0
6.0
4.0
2.0
0
130
20
10
NUMBER OF CYCLES AT 60 Hz
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
IFSM , PEAK HALF-WAVE CURRENT (AMPS)
200
135
140
145
150
155
TC, CASE TEMPERATURE (°C)
50
10
9.0
dc
8.0
7.0
SQUARE
WAVE
6.0
5.0
4.0
3.0
2.0
1.0
0
0
Figure 6. Current Derating, Case,
RqJC = 1.0 °C/W
2.0
4.0
6.0
8.0
10
12
14
16
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
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4
18
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
3
S
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
A
E
C
A
b3
B
c2
4
L3
Z
D
1
2
H
DETAIL A
3
L4
NOTE 7
c
SIDE VIEW
b2
e
b
TOP VIEW
0.005 (0.13)
M
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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