MGCHIP MDP5N50TH N-channel mosfet 500v, 5.0 a, 1.4(ohm) Datasheet

N-Channel MOSFET 500V, 5.0 A, 1.4Ω
General Description
Features
The MDP5N50 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent quality.
 VDS = 500V
 ID = 5.0A
 RDS(ON) ≤ 1.4Ω
MDP5N50 is suitable device for SMPS, HID and
general purpose applications.
@VGS = 10V
@VGS = 10V
Applications
 Power Supply
 PFC
 Ballast
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
5.0
A
3.2
A
o
TC=25 C
Continuous Drain Current
o
TC=100 C
Pulsed Drain Current
(1)
ID
IDM
TC=25oC
Power Dissipation
Derate above 25 oC
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
20
A
93
W
0.74
W/ oC
dv/dt
4.5
V/ns
EAS
230
mJ
TJ, Tstg
-55~150
o
Symbol
Rating
Unit
RθJA
62.5
RθJC
1.35
PD
C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
(1)
Thermal Resistance, Junction-to-Case(1)
Sep 2011. Version 1.2
1
o
C/W
MagnaChip Semiconductor Ltd.
MDP5N50 N-channel MOSFET 500V
MDP5N50
Part Number
Temp. Range
MDP5N50TP
MDP5N50TH
Package
Packing
RoHS Status
o
TO-220
Tube
Pb Free
o
TO-220
Tube
Halogen Free
-55~150 C
-55~150 C
Electrical Characteristics (Ta = 25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
500
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
3.0
-
5.0
Drain Cut-Off Current
IDSS
VDS = 500V, VGS = 0V
-
-
1
μA
Gate Leakage Current
IGSS
VGS = ±30V, VDS = 0V
-
-
100
nA
RDS(ON)
VGS = 10V, ID = 2.5A
-
1.15
1.4
Ω
gfs
VDS = 30V, ID = 2.5A
-
5
-
S
-
12.2
-
Drain-Source ON Resistance
Forward Transconductance
V
Dynamic Characteristics
Total Gate Charge
Qg
VDS = 400V, ID = 5.0A, VGS = 10V
(3)
Gate-Source Charge
Qgs
-
3.6
-
Gate-Drain Charge
Qgd
-
4.7
-
Input Capacitance
Ciss
-
500
-
Reverse Transfer Capacitance
Crss
-
3
-
Output Capacitance
Coss
-
65
-
Turn-On
td(on)
-
12
-
-
24
-
-
24
-
tf
-
22
-
IS
-
5.0
-
-
-
1.4
V
-
232
-
ns
-
1.3
-
μC
Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
VGS = 10V, VDS = 250V, ID = 5.0A,
RG = 25Ω(3)
pF
ns
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
IS = 5.0A, VGS = 0V
IF = 5.0A, dl/dt = 100A/μs(3)
A
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C.
3. ISD ≤5.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=16.5mH, IAS=5.0A, VDD=50V, , Rg =25Ω, Starting TJ=25°C
Sep 2011. Version 1.2
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MagnaChip Semiconductor Ltd.
MDP5N50 N-channel MOSFET 500V
Ordering Information
2.2
2.1
2.0
1.9
RDS(ON) [Ω ]
10
ID,Drain Current [A]
2.3
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
1
1.8
1.7
VGS=10.0V
1.6
VGS=20V
1.5
1.4
1.3
Notes
1. 250㎲ Pulse Test
2. TC=25
1.2
℃
0.1
0.1
1.1
1.0
1
10
0
5
10
VDS,Drain-Source Voltage [V]
20
25
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
1.8
※ Notes :
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
※ Notes :
RDS(ON), (Normalized)
Drain-Source On-Resistance
15
1. VGS = 10 V
2. ID = 5 A
1.6
1.4
VGS=10V
1.2
VGS=4.5V
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
1. VGS = 0 V
2. ID = 250㎂
1.1
1.0
0.9
0.8
-50
150
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
100
※ Notes :
* Notes ;
1. VDS=30V
IDR
Reverse Drain Current [A]
1. VGS = 0 V
2. ID = 250㎂
ID [A]
10
150
℃
10
25
℃
-55
℃
1
0.0
1
4
5
6
7
8
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Sep 2011. Version 1.2
0.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
4
MagnaChip Semiconductor Ltd.
MDP5N50 N-channel MOSFET 500V
2.4
MDP5N50 N-channel MOSFET 500V
1000
※ Note : ID = 5.0A
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
VGS, Gate-Source Voltage [V]
800
100V
8
250V
Ciss
Capacitance [pF]
400V
6
4
600
400
※ Notes ;
2
1. VGS = 0 V
2. f = 1 MHz
Crss
200
0
0
2
4
6
8
10
0
0.1
12
1
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
8
2
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
10
10 s
100 s
1
6
1 ms
ID, Drain Current [A]
10
10 ms
10
10
10
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
DC
0
100 ms
-1
4
2
Single Pulse
TJ=Max rated
TC=25
℃
10
-2
10
-1
10
0
10
1
10
0
25
2
50
75
100
125
150
TC, Case Temperature [ ]
VDS, Drain-Source Voltage [V]
℃
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
10000
single Pulse
RthJC = 1.35 /W
TC = 25
℃
℃
0
8000
D=0.5
Power (W)
Zθ JC(t),
Thermal Response
10
0.2
0.1
-1
10
0.05
0.02
0.01
6000
4000
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=1.35 /W
2000
℃
single pulse
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
0
1E-5
1
10
t1, Rectangular Pulse Duration [sec]
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Fig.11 Transient Thermal Response Curve
Sep 2011. Version 1.2
1E-4
5
MagnaChip Semiconductor Ltd.
MDP5N50 N-channel MOSFET 500V
Physical Dimensions
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
Sep 2011. Version 1.2
6
MagnaChip Semiconductor Ltd.
MDP5N50 N-channel MOSFET 500V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Sep 2011. Version 1.2
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MagnaChip Semiconductor Ltd.
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