DTS2301S www.daysemi.jp P-Channel 20 V (D-S) 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 20 RDS(on) () at VGS = - 4.5 V 0.120 RDS(on) () at VGS = - 2.5 V 0.180 ID (A) - 3.9 Configuration Single S TO-236 (SOT-23) G 1 G 3 S D 2 Top View D DTS2301S P-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free DTS2301S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V - 3.9 - 2.2 IS - 3.7 IDM - 15 IAS -9 EAS 4 PD TC = 125 °C UNIT 3 1 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Foot (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. 1 °C/W DTS2301S www.daysemi.jp SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = - 250 μA - 20 - - VGS(th) VDS = VGS, ID = - 250 μA - 0.45 - - 1.5 VDS = 0 V, VGS = ± 8 V - - ± 100 VGS = 0 V VDS = - 20 V - - -1 - - - 50 IGSS Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 20 V, TJ = 125 °C VGS = 0 V VDS = - 20 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 4.5 V VDS5 V -8 - - VGS = - 4.5 V ID = - 2.8 A - 0.080 0.120 VGS = - 2.5 V ID = - 2 A - 0.110 0.180 VDS = - 1.6 V, ID = - 2.8 A - 7 - - 340 425 Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss - 80 100 Reverse Transfer Capacitance Crss - 55 70 Total Gate Chargec Qg - 5 8 - 0.7 - - 1.3 - 5.5 10 14.5 - 15 22 - 14 21 - 30 45 - 9 15 Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Qgs Fall Timec Source-Drain Diode Ratings and VGS = - 4.5 V VDS = - 10 V, f = 1 MHz VDS = - 10 V, ID = - 2.8 A Qgd Rg f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = - 10 V, RL = 10 ID - 1 A, VGEN = - 4.5 V, Rg = 1 tf pF nC ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 1.6 A, VGS = 0 - - - 15 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS2301S www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 10 T C = 25 °C V GS = 10 V thru 2.5 V 8 ID - Drain Current (A) ID - Drain Current (A) 8 V GS = 2 V 6 4 V GS = 1.5 V 2 0 T C = 125 °C 6 4 2 V GS = 1 V 0 T C = - 55 °C 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 0 5 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics Output Characteristics 0.5 10 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) T C = - 55 °C 8 T C = 25 °C 6 T C = 125 °C 4 0.4 0.3 0.2 V GS = 2.5 V 2 0.1 0 0 V GS = 4.5 V 0 1 2 3 ID - Drain Current (A) 4 0 5 2 4 6 8 10 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 600 4.5 4.0 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 500 400 Ciss 300 200 Coss 100 ID = 2.8 A 3.5 V DS = 10 V 3.0 2.5 2.0 1.5 1.0 0.5 Crss 0 0.0 0 5 10 15 VDS - Drain-to-Source Voltage (V) 20 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Capacitance 3 4 5 DTS2301S www.daysemi.jp TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 2.8 A 10 1.7 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 V GS = 4.5 V 0.8 T J = 150 °C 1 T J = 25 °C 0.1 0.01 V GS = 2.5 V 0.5 - 50 0.001 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0 175 On-Resistance vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 0.5 1.0 VGS(th) Variance (V) 0.6 0.4 0.3 ID = 250 μA 0.2 ID = 5 mA 0.1 0 0.2 T J = 150 °C - 0.1 T J = 25 °C 0.0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) - 0.2 - 50 5 - 25 0 On-Resistance vs. Gate-to-Source Voltage ID = 1 mA - 23 - 24 - 25 - 26 - 27 - 50 - 25 25 50 75 100 TJ - Temperature (°C) Threshold Voltage - 22 VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 0.4 0.8 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain Source Breakdown vs. Junction Temperature 4 125 150 175 DTS2301S www.daysemi.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 1 ms 10 ms 1 100 ms 1s 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJF = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 5 1 10 DTS2301S www.daysemi.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10-3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 6 Package Information SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 www.GD\VHPLMS 1 Application Note 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE www.daysemi.jp 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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