APTM100A23SCTG Phase leg VDSS = 1000V RDSon = 230mΩ typ @ Tj = 25°C ID = 36A @ Tc = 25°C Series & SiC parallel diodes MOSFET Power Module NT C2 VBUS Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • Power MOS 7® MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Q1 G1 OUT S1 Q2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance Symmetrical design Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBUS S2 NT C1 • • S1 S2 NTC2 G1 G2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS OUT Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 36 27 144 ±30 270 694 18 50 2500 Unit V A V mΩ W A July, 2006 0/VBUS Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTM100A23SCTG – Rev 2 OUT VBUS APTM100A23SCTG All ratings @ Tj = 25°C unless otherwise specified RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 18A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 36A IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Unit mΩ V nA pF nC 12 35 767 1255 µJ 902 Typ Max 350 600 Tj = 125°C 60 1.1 1.4 0.9 Tj = 25°C 24 Tj = 125°C 48 Tj = 25°C 66 Tj = 125°C 300 www.microsemi.com µJ 760 Min 200 Tj = 25°C Tj = 125°C Tc = 85°C ns 121 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5Ω IF = 60A VR = 133V di/dt = 400A/µs Max µA 10 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 36A, R G = 2.5Ω IF = 60A IF = 120A IF = 60A Unit 194 Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 36A R G = 2.5Ω VR=200V Typ 8700 1430 240 308 Max 200 1000 270 5 ±150 52 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current 230 3 Min Series diode ratings and characteristics IRM Typ Unit V µA A 1.15 V July, 2006 IDSS Test Conditions ns nC 2-7 APTM100A23SCTG – Rev 2 Electrical Characteristics Symbol Characteristic APTM100A23SCTG Parallel SiC diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Test Conditions Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage QC Total Capacitive Charge Q Total Capacitance Min 1200 200 400 20 1.6 2.6 800 4000 180 f = 1MHz, VR = 400V 132 Symbol Characteristic VISOL TJ TSTG TC Torque Wt Max Tj = 25°C Tj = 150°C Tc = 125°C Tj = 25°C IF = 20A Tj = 175°C IF = 20A, VR = 600V di/dt =1200A/µs f = 1MHz, VR = 200V VR=1200V Thermal and package characteristics RthJC Typ Typ Transistor Series diode Junction to Case Thermal Resistance Parallel diode RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 2500 -40 -40 -40 2.5 RT = Min R 25 1.8 3.0 V nC pF Max 0.18 0.65 0.8 Unit °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K µA A 56 Min Unit V Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL D IMENSION S MARKED " * " ARE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTM100A23SCTG – Rev 2 July, 2006 SP4 Package outline (dimensions in mm) APTM100A23SCTG Thermal Impedance (°C/W) Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.7 0.14 0.12 0.5 0.1 0.08 0.3 0.06 0.04 0.1 Single Pulse 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 160 100 7V V GS=15&8V 80 6.5V 60 6V 40 5.5V 20 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 140 ID, Drain Current (A) 120 100 80 60 T J=25°C 40 20 5V 0 0 5 10 15 20 25 TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 10 VGS =20V 1 0.9 0.8 35 30 25 20 15 10 5 0 0 20 40 60 80 100 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance V GS=10V 1.1 3 40 Normalized to VGS =10V @ 18A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 T J=-55°C 0 4-7 APTM100A23SCTG – Rev 2 I D, Drain Current (A) 120 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=18A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 100µs limited by RDSon 100 1ms 10 Single pulse TJ =150°C TC=25°C 10ms 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 14 ID=36A TJ=25°C 12 10 VDS=200V V DS =500V VDS=800V 8 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 50 100 150 200 250 300 350 400 Gate Charge (nC) July, 2006 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5-7 APTM100A23SCTG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100A23SCTG APTM100A23SCTG Delay Times vs Current Rise and Fall times vs Current 60 160 td(off) VDS=667V RG=2.5Ω TJ=125°C L=100µH 50 120 100 tr and tf (ns) V DS=667V RG =2.5Ω T J=125°C L=100µH 80 60 40 30 tr 20 40 t d(on) 20 10 0 0 10 20 30 40 50 60 70 80 10 20 ID, Drain Current (A) 70 80 5 V DS =667V RG =2.5Ω T J=125°C L=100µH 2 1.5 Eon Switching Energy (mJ) Switching Energy (mJ) 30 40 50 60 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 Eoff 1 0.5 VDS=667V ID=36A T J=125°C L=100µH 4 3 Eoff 2 Eon Eoff 1 0 0 10 20 30 40 50 60 70 80 0 I D, Drain Current (A) 3 5 8 10 13 15 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS I DR, Reverse Drain Current (A) 300 VDS=667V D=50% RG=2.5Ω T J=125°C T C=75°C 150 100 Hard switching 50 0 14 18 22 26 30 I D, Drain Current (A) 100 TJ=150°C T J=25°C 10 1 34 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) July, 2006 Frequency (kHz) tf www.microsemi.com 6-7 APTM100A23SCTG – Rev 2 td(on) and td(off) (ns) 140 APTM100A23SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.6 0.7 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 800 30 IR Reverse Current (µA) I F Forward Current (A) TJ=25°C TJ=75°C 20 T J=125°C 10 TJ=175°C 600 400 0.5 1 1.5 2 2.5 3 T J=125°C 200 0 0 T J=75°C 3.5 VF Forward Voltage (V) T J=175°C 0 400 600 T J=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1600 1200 800 400 0 1000 July, 2006 10 100 VR Reverse Voltage Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7-7 APTM100A23SCTG – Rev 2 1