AVAGO AMMP-5620-TR1G 6 â 20 ghz high gain amplifier in smt package Datasheet

AMMP-5620
6 – 20 GHz High Gain Amplifier in SMT Package
Data Sheet
Description
Features
The AMMP-5620 MMIC is a GaAs wide-band amplifier in
a surface mount package designed for medium output
power and high gain over the 6-20 GHz frequency range.
The 3 cascaded stages provide high gain while the single
bias supply offers ease of use. It is fabricated using a
PHEMT integrated circuit process. The RF input and
output ports have matching circuitry for use in 50-ohms
environments. The MMIC is a cost effective alternative
to hybrid (discrete FET) amplifiers that require complex
tuning and assembly processes.
•
•
•
•
•
•
•
Vd
NC
1
2
3
8
4
7
6
5
NC
NC
NC
RFout
Pin
Function
1
2
3
4
5
6
7
8
NC
Vd
NC
RF_out
NC
NC
NC
RF_in
• General purpose, wide band amplifier in communication
systems or microwave instrumentation
• High Gain Amplifier
Functional Block Diagram
Vd
1
2
0.1uF
3
100pF
RFin
4
RFin
NC
Applications
8
Package Diagram
Surface Mount Package, 5.0 x 5.0 x 1.25 mm
Wide Frequency Range 6-20 GHz
High Gain: 17.5 dB Typical
Medium Output P1dB: 14.8 dBm Typical
Input and Output Return Loss: <-10 dB Typical
50 Ohm Input and Output Match
Single Supply Bias: 5V @ 95 mA Typical
7
6
RFout
5
AMMP-5620
Note: Package base: GND
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (40V)
ESD Human Body Model (150V)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Note: MSL Rating = Level 2A
Electrical Specifications
1. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius.
2. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance
may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching.
3. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain.
Table 1. RF Electrical Characteristics (TA=25°C, Freq=18GHz, Vd=5.0V, Idq=95mA)
Parameter
Min
Typ.
Max
Unit
Small-signal Gain, Gain
15.5
17.5
19.5
dB
Noise Figure, NF
5.1
7.0
dB
Output Power at 1dB Gain Compression, P1dB
14.8
dBm
Third Order Intercept Point, OIP3
22.5
dBm
Input Return Loss, RLin
11.5
dB
Output Return Loss, RLout
11.6
dB
Reverse Isolation, Isolation
-43.0
dB
Table 2. Recommended Operating Range
Description
Min.
Drain Supply Voltage, Vd
Drain Supply Current, Id
Typical
Max.
5
70
95
Unit
V
130
mA
Notes:
1. Ambient operation temperature TA = 25°C unless otherwise noted.
2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Table 3. Thermal Properties
Parameter
Test Conditions
Value
Thermal Resistance, θjc
θjc = 28 °C/W
Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method.
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Max.
Unit
Drain Supply Voltage, Vd
7.5
V
Total Drain Current, Id
135
mA
RF Input Power, Pin
20
dBm
Power Dissipation, Pd
1.0
W
Channel Temperature, Tch
+150
°C
+150
°C
+260
°C
Storage Temperature, Tstg
Maximum Assembly Temperature, Tmax
Min.
-65
Comments
CW
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd
and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
2
Selected performance plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports.
20
0
12
8
4
-30
-40
-50
-20
-30
-60
4
7
10
13
16
Frequency (GHz)
19
22
Figure 1. Gain
-70
7
10
13
16
Frequency (GHz)
19
8
-5
7
-40
22
NF (dB)
-20
4
3
-25
2
-30
1
4
7
10
13
16
Frequency (GHz)
19
0
22
Figure 4. Output Return Loss
13
16
Frequency (GHz)
19
22
12
8
4
4
7
10
Figure 5. Noise Figure
13
16
Frequency (GHz)
19
22
0
4
7
10
13
16
Frequency (GHz)
19
22
Figure 6. P1dB
120
18 GHz
15
10
13 GHz
115
7 GHz
110
5
105
0
100
-5
95
-10
Id (mA)
20
10
16
5
-15
7
20
6
-10
4
Figure 3. Input Return Loss
Figure 2. Isolation
0
-35
4
OP1dB (dBm)
0
Output RL (dB)
-10
-20
Input RL (dB)
Isolation (dB)
Gain (dB)
16
Pout (dBm)
0
-10
90
-20
-15
-10
-5
0
5
10
Pin (dBm)
Figure 7. Pout and Id vs. Pin
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
3
Over Voltage plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports.
20
0
8
Vd=4V
Vd=5V
4
7
10
13
16
Frequency (GHz)
19
22
Figure 8. Gain and Voltage
-40
-50
-70
-20
8
-5
7
4
7
10
13
16
Frequency (GHz)
19
22
-40
-20
Vd=4V
Vd=5V
-30
4
7
10
13
16
Frequency (GHz)
19
Figure 11. Output Return Loss and Voltage
4
3
Vd=4V
Vd=5V
1
22
0
7
10
13
16
Frequency (GHz)
19
22
16
2
Vd=6V
4
20
5
-15
Vd=6V
Figure 10. Input Return Loss and Voltage
6
-10
-25
Vd=4V
Vd=5V
-30
Figure 9. Isolation and Voltage
0
-35
-10
-30
NF (dB)
Output RL (dB)
Vd=6V
-60
Vd=6V
4
-20
OP1dB (dBm)
0
-10
0
Input RL (dB)
12
Isolation (dB)
Gain (dB)
16
Vd=4V
Vd=5V
7
10
13
16
Frequency (GHz)
Figure 12. Noise Figure and Voltage
19
8
Vd=4V
Vd=5V
4
Vd=6V
4
12
22
0
Vd=6V
4
7
10
13
16
Frequency (GHz)
19
22
Figure 13. P1dB and Voltage
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
4
Over Temperature Performance Plots
All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports
0
12
Isolation (dB)
8
-40 °C
25 °C
4
0
7
10
13
16
Frequency (GHz)
19
22
Figure 14. Gain and Temperature
Output RL (dB)
-20
85 °C
-30
-40
-50
-70
8
-5
7
-10
6
4
7
10
13
16
Frequency (GHz)
19
NF (dB)
-20
-40 °C
25 °C
-30
4
7
10
13
16
Frequency (GHz)
19
-40 °C
25 °C
Figure 17. Output Return Loss and Temperature
7
10
13
16
19
22
Frequency (GHz)
Figure 16. Input Return Loss and Temperature
4
3
0
4
16
-40 °C
25 °C
85 °C
1
22
85 °C
20
2
85 °C
-40
22
5
-15
-25
-20
-30
Figure 15. Isolation and Temperature
0
-35
-10
-60
85 °C
4
-10
0
OP1dB (dBm)
Gain (dB)
16
-40 °C
25 °C
Input RL (dB)
20
4
7
10
13
16
Frequency (GHz)
Figure 18. Noise Figure and Temperature
19
12
8
-40 °C
25 °C
85 °C
4
22
0
4
7
10
13
16
19
22
Frequency (GHz)
Figure 19. P1dB and Temperature
100
Id (mA)
95
90
-40 °C
25 °C
85 °C
85
80
3
3.5
4
4.5
Vd (V)
5
5.5
6
Figure 20. Id vs. Vd
Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be
improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching.
5
Biasing and Operation
The AMMP-5620 only requires a single positive supply
connected to the Vd pin (2). The recommended supply
voltage is 5V. The supply should be bypassed with a
0.1uF capacitor placed as close to the component as
possible. The package base is the RF and DC ground connection. The biasing arrangement is shown in Figure 21.
Figure 22 shows a simplifies schematic for the amplifier
die. All three stages are self-biased as shown. Each stage
has feedback around it to control the gain, match and
performance, resulting in excellent wideband performance. Also shown are the on-chip DC blocking capacitors for both the RFin and RFout pins.
The AMMP Packaged Devices are compatible with high
volume surface mount PCB assembly processes.
The PCB material and mounting pattern, as defined in
the data sheet, optimizes RF performance and is strongly
recommended. An electronic drawing of the land pattern
is available upon request from Avago Sales & Application
Engineering.
Please refer to the Absolute Maximum Ratings table for
allowed DC and thermal conditions.
Figure 23. Demonstration Board (available upon request)
Figure 21. Typical Application
Figure 22. Simplified MMIC Schematics
6
Typical Scattering Parameters
Please refer to <http://www.avagotech.com> for typical scattering parameters data.
Package Dimension, PCB Layout and Tape and Reel information
Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A).
Part Number Ordering Information
Devices per
Container
Container
AMMP-5620-BLKG
10
Antistatic Bag
AMMP-5620-TR1G
100
7” Reel
AMMP-5620-TR2G
500
7” Reel
Part Number
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0585EN
AV02-0513EN - July 16, 2013