WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers FEATURES better reverse leakage current and thermal resistance. profile surface • Low z Fast Switching Speedmounted application in order to optimize board space. z For• General Low powerPurpose loss, highSwitching efficiency. Applications High current capability, low forward voltage drop. • z High Conductance • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring RoHS product for packing code suffix ”G” high-speed switching. • Ultra Silicon epitaxial planar chip, metalcode siliconsuffix junction. • Halogen free product for packing “H” • Lead-free parts meet environmental standards of z SOT-523 SOD-123H 0.146(3.7) 0.130(3.3) 1 2 • RoHS product for packing code suffix "G" Marking: Halogen MMBD4148T: KA2, free product for packing code suffix "H" Mechanical data BAS16T:A2 • Epoxy : UL94-V0 rated flame retardant Maximum Ratings @Ta=25℃ • Case : Molded plastic, SOD-123H , • Terminals Parameter :Plated terminals, solderable per MIL-STD-750 Symbol Non-Repetitive Peak Reverse Voltage • Polarity : Indicated by cathode band Peak Repetitive Peak Reverse Position : AnyVoltage • Mounting Working• Peak Reverse Voltage Weight : Approximated 0.011 gram DC Blocking Voltage 0.071(1.8) 0.056(1.4) 3 Moisture Sensitivity/228 Level 1 MIL-STD-19500 Method 2026 0.012(0.3) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Limit VRM 100 VRRM VRWM VR 75 Unit V Dimensions in inches and (millimeters) V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RMS Reverse Voltage VR(RMS) Ratings at 25℃ ambient temperature unless otherwise specified. Forward Continuous Current IFM Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Average Rectified Output Current IO Peak Forward Surge RATINGS Current @t=1.0μs Marking Code IFSM VRRM Maximum Recurrent Peak Reverse Voltage Power Dissipation VRMS Maximum RMS Voltage Thermal Junction to Ambient MaximumResistance DC Blocking Voltage VDC Junction MaximumTemperature Average Forward Rectified Current IO Storage Temperature Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Electrical Ratings @Ta=25℃ IFSM CJ Typical Junction Parameter Capacitance (Note 1) mA 15 50 16 60 18 80 14 21 28 35 42 56 mW RθJA20 30 40625 50 60 80 K/W 100 Pd 200 Tj 150 TSTG -55~+150 75 Maximum Average Reverse Current at @T A=25℃ @T A=125℃ NOTES: Reverse current 1.0 Max Unit V 0.715 115 150 120 200 Vo 70 105 140 Vo 150 200 Vo ℃ Am ℃ 30 40 120 10 100 Am ℃ P Conditions -55 to +150 - 65 to +175 V ℃ IR=1μA ℃ IF=1mA SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF2 0.855 V VF3 1.0 V 0.5 IF=50mA VF4 1.25 V 10 IF=150mA IR1 1 μA VR=75V R2 25 nA VR=20V CT 2 pF VR=0V,f=1MHz IR 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. I 2- Thermal Resistance From Junction to Ambient Typ -55 to +125 VF1 VF Maximum Forward Forward voltageVoltage at 1.0A DC A 14 1.0 40 VTSTG (BR) CHARACTERISTICS 2012-1 150 13 30 Min Reverse breakdown voltage Storage Temperature Range 2012-06 mA 12 20 Symbol TJ Operating Temperature Range Reverse recovery time 300 RΘJA Typical Thermal Resistance (Note 2) Capacitance between terminals V SYMBOL FM120-MH FM130-MH FM140-MH 2.0 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U @ t=1.0s Rated DC Blocking Voltage 53 trr 0.50 4 IF=10mA 0.70 ns 0.85 0.9 0.92 Vo mA IF=IR=10mA Irr=0.1XIR,RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) Typical Characteristics 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V IO 1.0 A IFSM 30 A RΘJA 40 120 ℃ Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage -55 to +125 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD4148T THRU BAS16T SOT-523 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-523 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. .035(0.90) .028(0.70) • Epoxy : UL94-V0 rated flame retardant .067(1.70) • Case : Molded plastic, SOD-123H 0.031(0.8) Typ. , • Terminals :Plated terminals, solderable per MIL-STD-750.059(1.50) Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram .069(1.75) .057(1.45) Mechanical data .004(0.10)MIN. 0.071(1.8) 0.056(1.4) 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% .014 (0.35 ) .008(0.20) .010(0.25) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS .043(1.10) Marking Code 12 13 14 15 16 .004(0.10) 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage V VRRM .035(0.90) V Maximum RMS Voltage Maximum DC Blocking Voltage VRMS 14 21 28 35 42 56 70 105 140 VDC 20 30 40 50 60 80 100 150 200 IO 1.0 A IFSM 30 A RΘJA 40 120 ℃ Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ .004(0.10)MAX. Storage Temperature Range -55 to +150 - 65 to +175 VF Maximum Average Reverse Current at @T A=25℃ .014(0.35) IR .006(0.15) @T A=125℃ NOTES: .035(0.90) .028(0.70) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum Forward Voltage at 1.0A DC Rated DC Blocking Voltage -55 to +125 TSTG CHARACTERISTICS V 0.50 0.70 0.85 0.9 0.92 0.5 10 V m 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-1 Rev.D CORP WILLAS ELECTRONIC WILLAS ELECTRONIC CORP.