Rohm DTA144WE -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA144WE / DTA144WUA / DTA144WKA
 Applications
Inverter, Interface, Driver
 Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
 Features
1)Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2)The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3)Only the on / off conditions need to be set for operation,
making the device design easy.
4)Higher mounting densities can be achieved.
(2)
1.0
(1) GND
0.1Min.
0.15
Each lead has same dimensions
(2) IN
(3) OUT
UMT3
Abbreviated symbol : 76
2.0
<SC-70>
0.9
0.7
0.2
0.3
2.1
1.25
(3)
0.1Min.
(1)
(2)
0.65 0.65
TL
3000
DTA144WE
−
−
T106
3000
−
0.15
1.3
(1) GND
(2) IN
(3) OUT
T146
3000
−
Each lead has same dimensions
Abbreviated symbol : 76
2.9
SMT3
−
<SC-59>
−
1.1
0.4
0.8
(3)
1.6
2.8
DTA144WKA
0.2
0.5 0.5
EMT3 UMT3 SMT3
Taping Taping Taping
DTA144WUA
(1)
0.2
 Inner circuit
(2)
(1)
0.95 0.95
0.15
1.9
R1
IN
OUT
(1) GND
(2) IN
(3) OUT
R2
0.3Min.
Part No.
1.6
0.8
(3)
 Packaging specifications
Code
Basic ordering unit (pieces)
0.55
0.3
 Structure
PNP epitaxial planar silicon transistor
(Resistor built-in type)
Package
Packaging type
0.7
1.6
Each lead has same dimensions
Abbreviated symbol : 76
GND(+)
IN
OUT
GND(+)
R1=47kΩ, R2=22kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTA144WE / DTA144WUA / DTA144WKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
VCC
VI
−50
−40 to +10
−30
V
V
Supply voltage
Input voltage
IO
Output current
DTA144WE
Power
dissipation
Pd
DTA144WUA / DTA144WKA
Junction temperature
Storage temperature
mA
−100
150
IC(Max.)
mW
Tj
200
150
Tstg
−55 to +150
°C
°C
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Input voltage
VI(off)
VI(on)
−
−4
−
−
−0.8
−
V
Output voltage
VO(on)
−
−0.1
−0.3
V
II
R1
R2/R1
32.9
0.37
−
−
−
47
0.47
−
250
−0.16
−0.5
−
61.1
0.57
−
mA
GI
−
−
56
Input current
IO(off)
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
fT
∗
Unit
Conditions
VCC=−5V, IO=−100μA
VO=−0.3V, IO=−2mA
IO=−10mA, II=−0.5mA
μA
VI=−5V
VCC=−50V, VI=0V
−
IO=−5mA, VO=5V
kΩ
−
MHz
−
−
VCE=−10V, IE= 5mA, f=100MHz
 Electrical characteristics curves
−10m
VO= − 0.3V
− 5m
− 20
Ta= 40°C
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
− 50
Ta=25°C
− 10
−5
−2
−1
Ta=100°C
500m
1k
VCC= − 5V
− 2m
Ta=100°C
− 1m
− 500μ
− 200μ
VO= − 5V
Ta=100°C
500
Ta=25°C
− 100μ
− 50μ
Ta= − 40°C
− 20μ
− 10μ
DC CURRENT GAIN : GI
−100
Ta=25°C
200
100
50
Ta= − 40°C
20
10
5
− 5μ
200m
100m
− 100μ
− 1m
− 10m
− 100m
OUTPUT CURRENT : IO (A)
OUTPUT VOLTAGE : VO(on) (V)
2
−1
− 1.5
−2
− 2.5
−3
− 3.5
INPUT VOLTAGE : VI(off) (V)
Fig.1 Input voltage vs. Output current
(ON characteristics)
-1
− 2μ
− 1μ
− 0.5
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
−100μ
− 1m
− 10m
− 100m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO/II=20
-500m
Ta=100°C
Ta=25°C
-200m
-100m
-50m
-20m
Ta= - 40°C
-10m
-5m
-2m
-1m
-100μ
-1m
-10m
-100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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