IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available G S N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. VDS (V) 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 33 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Single ORDERING INFORMATION Package TO-220 FULLPAK IRFI530GPbF SiHFI530G-E3 IRFI530G SiHFI530G Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL LIMIT VDS VGS 100 ± 20 9.7 6.9 39 0.28 100 9.7 4.2 42 5.5 - 55 to + 175 300d 10 1.1 ID IDM TC = 25 °C for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m Notes a. b. c. d. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). VDD = 25 V, starting TJ = 25 °C, L = 1.6 mH, RG = 25 Ω, IAS = 9.7 A (see fig. 12). ISD ≤ 9.7 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. 1.6 mm from case. 2014-8-13 1 www.kersemi.com IRFI530G THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 65 Maximum Junction-to-Case (Drain) RthJC - 3.6 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 - - 0.16 Ω 4.0 - - S Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 5.8 Ab VGS = 10 V gfs VDS = 50 V, ID = 5.8 Ab µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Drain to Sink Capacitance VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 670 - - 250 - - 60 - f = 1.0 MHz - 12 - C Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 9.7 A, VDS = 80 V, see fig. 6 and 13b - - 33 - - 5.4 pF nC Gate-Drain Charge Qgd - - 15 Turn-On Delay Time td(on) - 8.6 - - 28 - - 34 - - 25 - - 4.5 - - 7.5 - - - 9.7 - - 39 - - 2.5 - 150 280 ns - 0.85 1.7 µC Rise Time Turn-Off Delay Time Fall Time VDD = 50 V, ID = 9.7 A, RG = 12 Ω, RD= 5.1 Ω, see fig. 10b tr td(off) tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 9.7 A, VGS = 0 Vb TJ = 25 °C, IF = 9.7 A, dI/dt = 100 A/µsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. 2014-8-13 2 www.kersemi.com IRFI530G TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature 2014-8-13 3 www.kersemi.com IRFI530G Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 5 - Fig. 8 - Maximum Safe Operating Area Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 2014-8-13 4 www.kersemi.com IRFI530G RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - I AS V DD VDS 10 V tp 0.01 Ω IAS Fig. 12a - Unclamped Inductive Test Circuit 2014-8-13 Fig. 12b - Unclamped Inductive Waveforms 5 www.kersemi.com IRFI530G Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13b - Gate Charge Test Circuit Fig. 13a - Basic Gate Charge Waveform 2014-8-13 6 www.kersemi.com IRFI530G Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current ISD Ripple ≤ 5 % * VGS = 5 V for logic level devices Fig.14 - For N-Channel 2014-8-13 7 www.kersemi.com